Abstract: A memory management method of a storage device including: programming write-requested data in a memory block; counting an elapse time from a time when a last page of the memory block was programmed with the write-requested data; triggering a garbage collection of the storage device when the elapse time exceeds a threshold value; and programming valid data collected by the garbage collection at a first clean page of the memory block.

Abstract: A storage device, a server device including the storage device and a method of operating the storage device are provided. The storage device includes a nonvolatile memory configured to store first control information related to a memory operation performed in a first temperature range and second control information related to a memory operation performed in a second temperature range different from the first temperature range, the first control information and the second control information being stored separately from each other, and a storage controller configured to receive a temperature sensed from a temperature sensor, determine a target temperature by processing the sensed temperature, select one of the first control information and the second control information based on the determined target temperature, and perform a memory operation on the nonvolatile memory using the selected control information.

Abstract: A failure prediction method and device for a storage device are provided. The method comprises: inputting SMART data of the storage device obtained in real time into each of a plurality of base classification models to obtain a classification result for the SMART data of the storage device obtained in real time that is output by the each classification model, wherein the each base classification model is obtained by training using historical SMART data of a plurality of storage devices and/or SMART data of the plurality of storage devices obtained online; determining whether the SMART data of the storage device obtained in real time is healthy data or erroneous data, based on classification results of the plurality of base classification models; predicting whether the storage device will fail, based on a number of SMART data that is determined as healthy data and a number of SMART data that is determined as erroneous data among SMART data of the storage device obtained within a predetermined time window.

Abstract: A method for operating a storage device capable of improving reliability of a memory system is provided. The method includes providing a storage device which includes a first component and a second component; receiving, via a host interface of the storage device, a command for requesting failure possibility information about the storage device from an external device; and providing, via the host interface, the failure possibility information about the storage device to the external device in response to the command.

Abstract: A storage device, a server device including the storage device and a method of operating the storage device are provided. The storage device includes a nonvolatile memory configured to store first control information related to a memory operation performed in a first temperature range and second control information related to a memory operation performed in a second temperature range different from the first temperature range, the first control information and the second control information being stored separately from each other, and a storage controller configured to receive a temperature sensed from a temperature sensor, determine a target temperature by processing the sensed temperature, select one of the first control information and the second control information based on the determined target temperature, and perform a memory operation on the nonvolatile memory using the selected control information.

Abstract: A method of accessing a nonvolatile memory device which includes a memory block where semiconductor layers including word lines are stacked includes receiving a write request for the memory block, determining whether the write request corresponds to one or more leading word lines, programming, in response to the write request determined as corresponding to the leading word lines, memory cells connected thereto in a first program mode, and programming, when the write request is determined as corresponding to a following word line different from the leading word lines, memory cells connected to the following word line in a second program mode. The second program mode is performed with a second program parameter including at least one of a number of program pulses, a number of program verify pulses, a program start voltage, and a program end voltage that is different from a corresponding first parameter of the first program mode.

Abstract: A memory management method of a storage device including: programming write-requested data in a memory block; counting an elapse time from a time when a last page of the memory block was programmed with the write-requested data; triggering a garbage collection of the storage device when the elapse time exceeds a threshold value; and programming valid data collected by the garbage collection at a first clean page of the memory block.

Abstract: A method of accessing a nonvolatile memory device which includes a memory block where semiconductor layers including word lines are stacked includes receiving a write request for the memory block, determining whether the write request corresponds to one or more leading word lines, programming, in response to the write request determined as corresponding to the leading word lines, memory cells connected thereto in a first program mode, and programming, when the write request is determined as corresponding to a following word line different from the leading word lines, memory cells connected to the following word line in a second program mode. The second program mode is performed with a second program parameter including at least one of a number of program pulses, a number of program verify pulses, a program start voltage, and a program end voltage that is different from a corresponding first parameter of the first program mode.

Abstract: A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.

Abstract: An operating method of a memory controller to control a nonvolatile memory device includes receiving information about operation failure from the nonvolatile memory device, receiving lock-out status information from the nonvolatile memory device, determining whether a lock-out signal is output based on the lock-out status information, and determining a failure block corresponding to the information about the operation failure as a normal block or a bad block depending on the determination result.

Abstract: An operating method of a storage device, which includes a nonvolatile memory device, includes entering a power-on mode, searching for an open memory block, which includes at least one erase word line, from among memory blocks included in the nonvolatile memory device, applying a program voltage to the at least one erase word line to close the open memory block if the number of the erase word lines included in the open memory block is not more than a preset value, and after the power-on mode, entering a normal operation mode. Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state.

Abstract: A read control method of a memory controller for controlling a memory device including a plurality of memory pages respectively connected to a plurality of word lines includes identifying a selected memory page connected to a selected word line among the plurality of memory pages has undergone a suspend operation, determining a read offset level of the selected memory page based on suspend operation information associated with the selected memory page according to a result of the identifying the selected memory page, and controlling a read operation of the memory device based on a read voltage associated with the read offset level that was determined.

Abstract: Methods of operating non-volatile memory devices are provided including receiving program data and a program address. Memory cells that correspond to the program address are selected from among memory cells in an erased state. The selected memory cells are programmed based on the program data such that each of the selected memory cells is programmed to one of a plurality of programmed states, where threshold voltage distributions of the programmed states are different from each other and are higher than a threshold voltage distribution associated with the erased state. By programming all or a portion of the memory cells corresponding to the erased state to have positive threshold voltages, degradation of the data retention capability of the memory cells may be reduced.

Abstract: A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.

Abstract: A storage device includes a nonvolatile memory device that detects loop counts of state pass loops of at least one target state of a plurality of target states, and generates state loop count information (SLCI) indicative of whether a program operation is successful based on the detected loop count of the state pass loops, during a program operation of selected memory cells; and a storage controller that makes a request to the nonvolatile memory device for the state loop count information in response to detection of an operation condition or an external command, and assigns a memory block in which the selected memory cells are included as a bad block based on the state loop count information from the nonvolatile memory device.

Abstract: A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.

Abstract: A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.

Abstract: A read control method of a memory controller for controlling a memory device including a plurality of memory pages respectively connected to a plurality of word lines includes identifying a selected memory page connected to a selected word line among the plurality of memory pages has undergone a suspend operation, determining a read offset level of the selected memory page based on suspend operation information associated with the selected memory page according to a result of the identifying the selected memory page, and controlling a read operation of the memory device based on a read voltage associated with the read offset level that was determined.

Abstract: An operating method of a memory controller to control a nonvolatile memory device includes receiving information about operation failure from the nonvolatile memory device, receiving lock-out status information from the nonvolatile memory device, determining whether a lock-out signal is output based on the lock-out status information, and determining a failure block corresponding to the information about the operation failure as a normal block or a bad block depending on the determination result.

Abstract: An operating method of a storage device, which includes a nonvolatile memory device, includes entering a power-on mode, searching for an open memory block, which includes at least one erase word line, from among memory blocks included in the nonvolatile memory device, applying a program voltage to the at least one erase word line to close the open memory block if the number of the erase word lines included in the open memory block is not more than a preset value, and after the power-on mode, entering a normal operation mode. Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state.