Abstract: The present disclosure relates to techniques for diagnosing a relay in a vehicle on-board charger (OBC), and an apparatus for diagnosing a relay in a vehicle OBC according to an exemplary embodiment may include first to third voltage sensors configured to measure phase-specific voltages for AC inputs to the relay circuit unit, fourth and fifth voltage sensors configured to measure line voltages for AC outputs from the relay circuit unit, and a diagnosis module configured to diagnose the relay circuit unit, based on the phase-specific voltages measured by the first to third voltage sensors and based on the line voltages measured by the fourth and fifth voltage sensors.

Abstract: A memory device may comprise: a memory cell array in which memory cells are connected in matrix form to word lines and bit lines; a plurality of mergers connected in series to transfer data that is read from a selected memory cell among the memory cells included in the memory cell array and is transformed into one of a direct current form or a pulse form; and an aligner that synchronizes an edge of first output data, output by one of the plurality of mergers, with an edge of a control pulse, thereby delaying the edge of the first output data.

Abstract: A memory device according to the present invention may comprise: a memory cell array in which memory cells of a latch structure are connected in matrix form to word lines and bit line pairs composed of bit lines and inverted bit lines; and a driving circuit which, during an ON period in which the word lines activate first memory cells connected to the corresponding word lines, continuously programs or reads n (n is a natural number of 2 or more) second memory cells among the first memory cells through n first bit line pairs.

Abstract: A memory device according to the present invention comprises: a memory cell array in which memory cells are connected to wordlines and bitlines in a matrix form; and a control circuit for programming the memory cells or controlling a read operation, according to a start address, a burst length, a latency length, and a program or read command which are transmitted from a host, wherein the control circuit may comprise: a pulse generation unit for generating register pulses and counter pulses in synchronization with an operation clock; and a counter that sets the start address in synchronization with the register pulses, counts the number of counter pulses corresponding to the sum of the latency length and the burst length, and increases an address from the start address to the sum of the start address and the burst length.

Abstract: A thermoplastic resin composition includes base resin, which includes a polycarbonate resin and an acrylonitrile-butadiene-styrene (ABS) resin, and an additive. The ABS resin includes a rubber-modified vinyl-based graft copolymer resin, an aromatic vinyl-vinyl cyanide-based copolymer resin. The polycarbonate resin has a weight-average molecular weight of 20,000 g/mol to 40,000 g/mol, and the rubber-modified vinyl-based graft copolymer resin comprises 50 wt % to 60 wt % of polybutadiene rubber based on a total wt % of the thermoplastic resin composition.

Abstract: The memory device according to an embodiment may comprise a memory cell array in which memory cells of a latch structure are connected in a matrix form to word lines and bit lines and a peripheral circuit configured to supply a first voltage to the memory cells only in a developing section of a read operation for the memory cells and supply a second voltage which maintains data of the memory cells and lower than the first voltage in other sections. The peripheral circuit may be configured to supply the second voltage to the memory cells in all sections of a write operation for the memory cells.

Abstract: A memory device according to the present invention comprises: a memory cell array in which memory cells are connected to wordlines and bitlines in a matrix form; and a control circuit for programming the memory cells or controlling a read operation, according to a start address, a burst length, a latency length, and a program or read command which are transmitted from a host, wherein the control circuit may comprise: a pulse generation unit for generating register pulses and counter pulses in synchronization with an operation clock; and a counter that sets the start address in synchronization with the register pulses, counts the number of counter pulses corresponding to the sum of the latency length and the burst length, and increases an address from the start address to the sum of the start address and the burst length.

Abstract: A memory device according to the present invention may comprise: a memory cell array in which memory cells are connected in matrix form to word lines and bit lines; a plurality of mergers connected in series to transfer data that is read from a selected memory cell among the memory cells included in the memory cell array and is transformed into one of a direct current form or a pulse form; and a sorter that synchronizes an edge of first output data, output by one of the plurality of mergers, with an edge of a control pulse, thereby delaying the edge of the first output data. First data, which is either data bit “0” or data bit “1”, can be input to the mergers in the form of a direct current of first logic, and second data, which is another piece of data, can be input to the mergers in the form of a pulse that changes from the first logic to the second logic and back to the first logic.

Abstract: A memory device according to the present invention may comprise: a memory cell array in which memory cells of a latch structure are connected in matrix form to word lines and bit line pairs composed of bit lines and inverted bit lines; and a driving circuit which, during an ON period in which the word lines activate first memory cells connected to the corresponding word lines, continuously programs or reads n (n is a natural number of 2 or more) second memory cells among the first memory cells through n first bit line pairs.

Abstract: A thermoplastic resin composition includes base resin, which includes a polycarbonate resin and an acrylonitrile-butadiene-styrene (ABS) resin, and an additive. The ABS resin includes a rubber-modified vinyl-based graft copolymer resin, an aromatic vinyl-vinyl cyanide-based copolymer resin. The polycarbonate resin has a weight-average molecular weight of 20,000 g/mol to 40,000 g/mol, and the rubber-modified vinyl-based graft copolymer resin comprises 50 wt % to 60 wt % of polybutadiene rubber based on a total wt % of the thermoplastic resin composition.

Abstract: Disclosed herein is a latch circuit capable of preventing an output failure caused due to simultaneous transition of a control signal and an input signal. The latch circuit according to the present invention generates a separate control adjustment signal CTR using the control signal Control and the input signal In and uses the control adjustment signal CTR, instead of the control signal for a latch operation. Accordingly, when the control signal and the input signal transition at the same time, the control adjustment signal is processed not to transition during a transition interval of the input signal, thereby preventing a metastability problem that occurred in the existing latch circuit.

Abstract: A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to a process temperature, and sequentially stacking a single crystalline silicon layer and a polycrystalline silicon layer over the silicon substrate by supplying a silicon source gas and an impurity source gas in to the chamber, where the chamber may be, for example, a CVD chamber or a LPCVD chamber.

Abstract: A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to a process temperature, and sequentially stacking a single crystalline silicon layer and a polycrystalline silicon layer over the silicon substrate by supplying a silicon source gas and an impurity source gas in to the chamber, where the chamber may be, for example, a CVD chamber or a LPCVD chamber.

Abstract: A semiconductor memory device capable of synchronous/asynchronous operation and data input/output method thereof are provided. The semiconductor memory device includes a memory cell array, a peripheral circuit configured to write data to a cell in the memory cell array and to read data from the cell, and a bypass control unit configured to control a late write operation and a bypass operation of the peripheral circuit according to mode conversion of the semiconductor memory device. Accordingly, data coherency can be maintained. In addition, dummy cycle time that may occur during the mode conversion can be prevented by generating a mode conversion signal only in response to toggling of a clock signal.

Abstract: There is provided a bit line voltage supply circuit for reducing leakage current flowing from bit lines to a memory cell without substantially deteriorating the performance of a semiconductor memory device. A bit line voltage switch applies a first supply voltage to a bit line pair in response to a first switch control signal, and applies a second supply voltage having a lower voltage than the first supply voltage to the bit line pair in response to a second switch control signal. A bit line voltage controller controls the first and second switch control signals so that the second supply voltage is supplied to the bit line pair during a standby mode, and the first supply voltage is supplied to the bit line pair when the semiconductor memory device changes from the standby mode to an operational mode for a predetermined time period.

Abstract: A semiconductor memory device capable of synchronous/asynchronous operation and data input/output method thereof are provided. The semiconductor memory device includes a memory cell array, a peripheral circuit configured to write data to a cell in the memory cell array and to read data from the cell, and a bypass control unit configured to control a late write operation and a bypass operation of the peripheral circuit according to mode conversion of the semiconductor memory device. Accordingly, data coherency can be maintained. In addition, dummy cycle time that may occur during the mode conversion can be prevented by generating a mode conversion signal only in response to toggling of a clock signal.

Abstract: A method and apparatus for repairing defective cells for each section word line. The repairing apparatus includes an address comparison unit and a repairing unit. The address comparison unit compares a main address of a defective address, indicating the location of a defective cell, to a main address of an external address. The address comparison unit determines when a redundancy main word line corresponding to the main address of the external address is activated. The repairing unit activates a redundancy section word line corresponding to a section address of the external address from among a plurality of redundancy section word lines connected to the redundancy main word line in order to repair the defective cell. Accordingly, defective cells are repaired for each section word line while minimizing the area of the repairing apparatus. Randomly generated defective cells can be efficiently repaired.

Abstract: There is provided a bit line voltage supply circuit for reducing leakage current flowing from bit lines to a memory cell without substantially deteriorating the performance of a semiconductor memory device. A bit line voltage switch applies a first supply voltage to a bit line pair in response to a first switch control signal, and applies a second supply voltage having a lower voltage than the first supply voltage to the bit line pair in response to a second switch control signal. A bit line voltage controller controls the first and second switch control signals so that the second supply voltage is supplied to the bit line pair during a standby mode, and the first supply voltage is supplied to the bit line pair when the semiconductor memory device changes from the standby mode to an operational mode for a predetermined time period.

Abstract: There is provided a power-on reset circuit and method for a semiconductor integrated circuit device using a plurality of power sources, in which a power-on reset operation is stable and reliable, where the power-on reset circuit includes voltage detection circuits for generating at least two voltage detection signals with respect to the power sources, the power-on reset circuit generates a plurality of power-on reset signals using combination logic circuits for performing logic operations of the voltage detection signals, and internal latches and flip-flops are stably reset in response to the plurality of power-on reset signals.

Abstract: There is provided a power-on reset circuit and method for a semiconductor integrated circuit device using a plurality of power sources, in which a power-on reset operation is stable and reliable, where the power-on reset circuit includes voltage detection circuits for generating at least two voltage detection signals with respect to the power sources, the power-on reset circuit generates a plurality of power-on reset signals using combination logic circuits for performing logic operations of the voltage detection signals, and internal latches and flip-flops are stably reset in response to the plurality of power-on reset signals.