Abstract: A display device includes a display module and a window panel disposed on an upper portion of the display module. The window panel includes a base film, and a functional layer disposed on an upper portion of the base film and having a hard coating agent and an anti-static agent.

Abstract: A display device includes a display module and a window panel disposed on an upper portion of the display module. The window panel includes a base film, and a functional layer disposed on an upper portion of the base film and having a hard coating agent and an anti-static agent.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: Provided is an organic light emitting display apparatus including a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a gate insulator, a source electrode and a drain electrode, a first electrode electrically connected to the source electrode or the drain electrode, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emitting layer and disposed between the first electrode and the second electrode. The gate insulator is disposed to insulate the gate electrode and the active layer and includes a plurality of patterns spaced apart from each other.

Abstract: An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide.

Abstract: An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer; an organic layer formed on the upper portion including the resistance layer and the wiring layer; and a capping layer formed on the organic layer to be overlapped with the resistance layer.

Abstract: A method of manufacturing a flexible display device is disclosed. The method includes arranging a first substrate having a plurality of depression units, forming a first plastic film in each of the plurality of depression units, forming a thin film transistor (TFT) on the first plastic film, forming a display device on the TFT, where the display device is configured to be electrically connected to the TFT, encapsulating an upper portion of the display device, cutting the first substrate, and separating the first substrate from the first plastic film.

Abstract: An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide semiconductor material has conductivity suitable for the transistor because of a diffusion path allowing hydrogen to escape from the active layer.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: Provided is an organic light emitting display apparatus including a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a gate insulator, a source electrode and a drain electrode, a first electrode electrically connected to the source electrode or the drain electrode, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emitting layer and disposed between the first electrode and the second electrode. The gate insulator is disposed to insulate the gate electrode and the active layer and includes a plurality of patterns spaced apart from each other.

Abstract: A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.

Abstract: An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer; an organic layer formed on the upper portion including the resistance layer and the wiring layer; and a capping layer formed on the organic layer to be overlapped with the resistance layer.

Abstract: An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide.

Abstract: An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide semiconductor material has conductivity suitable for the transistor because of a diffusion path allowing hydrogen to escape from the active layer.

Abstract: An organic light emitting display includes a substrate, an OLED including an anode electrode, a cathode electrode and an organic thin film formed between the anode electrode and the cathode electrode, a reflective layer on the OLED, the reflective layer comprising a laminated first material and second material, the first material and the second material having different refractive indices, and an encapsulation layer on the reflective layer, the encapsulation layer comprising at least one of organic thin film and inorganic thin film.

Abstract: An organic light emitting display includes a substrate, an OLED including an anode electrode, a cathode electrode and an organic thin film formed between the anode electrode and the cathode electrode, a reflective layer on the OLED, the reflective layer comprising a laminated first material and second material, the first material and the second material having different refractive indices, and an encapsulation layer on the reflective layer, the encapsulation layer comprising at least one of organic thin film and inorganic thin film.