Abstract: Provided is a holographic optical element printing method using a tunable focus lens and a rotating mirror. According to an embodiment, a holographic printer includes: a first optical engine and a second optical engine configured to adjust a phase of an incident collimated beam and emit the collimated beam; and a first reduction optical system and a second reduction optical system configured to reduce the beam emitted from the first optical engine and the second optical engine and to allow the beam to enter a holographic material, wherein each of the first optical engine and the second optical engine includes: a rotating mirror configured to reflect while adjusting the phase of the incident collimated beam through rotation; and a tunable focus lens configured to refract while adjusting the phase of the incident collimated beam reflected from the rotating mirror through focus tuning.

Abstract: Provided is a cognitive experiment method for change in periphery region image quality for parameter determination of a foveated hologram. According to an embodiment, a cognitive experiment method for determining foveated image parameters includes: generating a foveated image which includes a foveal region and a periphery region while reducing image quality regarding the periphery region; displaying the generated foveated image; receiving an input of a response to image quality of the periphery region from a subject; and collecting information regarding appropriate image quality of the periphery region, based on the response inputted by the subject. Accordingly, in applying a foveated hologram generation algorithm for real-time reproduction, various parameters such as a boundary between a foveal region image and a periphery region image in a foveated hologram, and a degree of quality degradation of the periphery region image may be appropriately determined through a cognitive experiment.

Abstract: Provided is a hologram image normalization method for a holographic printer. In a holographic printing method according to an embodiment, generating, encoding, and normalizing for the (n+1)-th hogel are performed in parallel with loading and recording of a normalized hologram for the n-th hogel, and moving and waiting for the (n+1)-th hogel. Accordingly, a global maximum value and a global minimum value for normalization may be calculated as approximate estimation values, and a hologram generation process and a printing process may be performed in parallel, so that a total printing time may be minimized and memory usage may be optimized when holographic printing is performed.

Abstract: A blender includes a container body in which food is accommodated, a main body to support the container body, and an air guide provided in the main body to guide discharging of air flowing through a motor assembly to below the main body.

Abstract: Proposed is an all-solid-state battery including a self-standing sheet layer positioned on a negative electrode current collector. The all-solid-state battery may include the negative electrode current collector, the self-standing sheet layer positioned on the negative electrode current collector, a solid electrolyte layer positioned on the sheet layer, a positive electrode active material layer positioned on the solid electrolyte layer, and a positive electrode current collector positioned on the positive electrode active material layer. The sheet layer contains carbon nanotubes.

Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.

Abstract: A quantum dot, and a light emitting device including the same is provided. The quantum dot includes a semiconductor nanocrystal and an organic ligand bound to the surface of the semiconductor nanocrystal, wherein the organic ligand includes a first ligand derived from a first thiol compound including a C12 or more aliphatic hydrocarbon group, and a second ligand derived from a second thiol compound including a C8 or less aliphatic hydrocarbon group.

Abstract: A quantum dot, and a light emitting device including the same is provided. The quantum dot includes a semiconductor nanocrystal and an organic ligand bound to the surface of the semiconductor nanocrystal, wherein the organic ligand includes a first ligand derived from a first thiol compound including a C12 or more aliphatic hydrocarbon group, and a second ligand derived from a second thiol compound including a C8 or less aliphatic hydrocarbon group.

Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.

Abstract: A 2-input NOR gate with NMOS transistors and PMOS transistors formed on different semiconductor layers, and a fabricating method for the same, are disclosed. The NMOS and PMOS transistors of the CMOS transistors are formed on different semiconductor layers unlike in the conventional technique, thereby improving the chip density. Further, the device isolating film forming process can be eliminated, and therefore, the fabrication process can be simplified, while the problems such as punch-through, latch-up and the like can be solved.