Abstract: The present disclosure provides a partition wall for an image display device, the partition wall which satisfies 0.8?A/B<1.0 and 0.85?C/B<1.0 when the line width at a thickness of 95% from the lowermost end portion of the partition wall is A, the maximum line width at a thickness of 50 to 90% from the lowermost end portion of the partition wall is B, and the line width at a thickness of 10% from the lowermost end portion of the partition wall is C, with respect to the total thickness of the partition wall, a manufacturing method thereof, and an image display device including the partition wall. The partition wall for an image display device according to the present disclosure can be effectively applied to the manufacture of the color conversion pixels through the inkjet process, and the image display device including the partition wall has excellent luminance and maintains high luminance even when observed from the side surface, thereby exhibiting an effect of excellent viewing angle properties.

Abstract: An apparatus for non-invasively estimating bio-information and a method of determining whether a bio-signal is normal by the apparatus for estimating bio-information are provided. The apparatus for estimating bio-information according to an embodiment of the disclosure includes: a photoplethysmogram (PPG) sensor configured to measure a PPG signal from an object; and a processor configured to extract a plurality of pairs of local maximum points and local minimum points from a second derivative signal of the PPG signal, to select at least one reference pair from among the extracted plurality of pairs, and to determine whether the PPG signal is normal based on the selected at least one reference pair.

Abstract: Provided is a semi-noncombustible building thermal insulation material including: a core layer; and a noncombustible coating layer formed with a thickness of 0.1 to 3 mm on one or both sides of the core layer, wherein the noncombustible coating layer includes aluminum oxide, silicon oxide, sodium silicate, and calcium carbonate.

Abstract: A display device includes: a substrate including a first emission area, a second emission area, and a third emission area; a first wavelength conversion pattern overlapping the first emission area; a second wavelength conversion pattern overlapping the second emission area; and a light-transmitting pattern overlapping the third emission area, wherein the first wavelength conversion pattern includes first wavelength shifters configured to convert a first light into a second light, and first scatterers, the second wavelength conversion pattern includes second wavelength shifters configured to convert the first light into a third light, and second scatterers, and a ratio between a concentration of the first wavelength shifters and a concentration of the second wavelength shifters is 1:1.1 to 1:1.3.

Abstract: A method and system for outputting a text content of text data to a voice, including using a transmitting terminal of a sender to transmit text data to a receiving terminal via a communications network, converting text content of the text data to speech and outputting the speech in the sender's voice characteristics using a voice database.

Abstract: The present invention relates to a method for manufacturing a thin film, comprising the steps of: preparing a substrate; preparing a raw material comprising a compound consisting of SiH2, as a basic structure thereof, and a functional group, including at least one of carbon, oxygen, and nitrogen, linearly bonded to both sides of the basic structure; vaporizing the raw material, and loading the substrate into a chamber; and providing the vaporized raw material to the inside of the chamber. Furthermore, the present invention is capable of depositing a high-quality thin film under various processing conditions; manufacturing a thin film within a wide range of processing temperatures, processing pressures, etc.; and utilizing various methods and equipment for manufacturing a thin film.

Abstract: The present invention includes the steps of: preparing a substrate; preparing a raw material including organic silane having CxHy (here, 1?x?9, 4?y?20, Y>2X) as a functional group; vaporizing the raw material; loading the substrate to the inside of a chamber; and supplying the vaporized raw material into the chamber. Accordingly, the present invention can manufacture a thin film without degrading the film quality even at low temperatures, and can more reliably and stably manufacture a device for which a low-temperature process is required.

Abstract: The present disclosure discloses a method of outputting a text content of text data to a sender's voice.

Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Abstract: Disclosed is a solid-state dye-sensitized solar cell with improved long-term stability containing a pyridine-based compound as an additive. In particular, the solid-state dye-sensitized solar cell includes a hole transport layer containing a pyridine-based additive mixed with a hole transport material to provide a solid-state hole transport layer in the solid-state dye-sensitized solar cell. Accordingly, superior initial efficiency and substantially improved long-term stability of the solid-state dye-sensitized solar cell may be obtained. Further, the dye-sensitized solar cell may be manufactured using a simple process without using a sealing agent.

Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Abstract: The present invention relates to a dye-sensitized solar cell and to a method for manufacturing same, and more specifically, to a novel dye-sensitized solar cell for preventing photoelectron recombination due to a triiodide, and to a method for manufacturing same. The dye-sensitized solar cell, according to the present invention, comprises a metal oxide which is produced by co-adsorption of a reactive compound, which can react with iodine, with a dye on a surface of the dye-sensitized solar cell. The dye-sensitized solar cell can achieve high efficiency by preventing the photoelectron recombination due to the triiodide while using a small amount of the dye.

Abstract: The present invention relates to a dye-sensitized solar cell and to a method for manufacturing same, and more specifically, provides a novel dye-sensitized solar cell for preventing photoelectron recombination due to a triiodide, and to a method for manufacturing same. The dye-sensitized solar cell, according to the present invention, comprises a metal oxide resulting from coadsorbing, on a surface of the dye-sensitized solar cell, a reactive compound which can react with iodine with a dye. The dye-sensitized solar cell is highly efficient by being able to prevent the photoelectron recombination due to the triiodide while using a small amount of the dye.

Abstract: A semiconductor device includes a device chip coupled to an electrode chip. The device chip includes a first device electrode on a first substrate, and the electrode chip includes a first pad electrode extending at least partially through a second substrate. The first pad electrode is electrically connected to the first device electrode and includes spaced conductive sections which serve as a heat dissipating structure to transfer heat received from the device chip and the electrode chip. A method for making a semiconductor device includes using the substrate of the electrode chip as a support during thinning the substrate of the device chip.

Abstract: Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.

Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

Abstract: Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.

Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

Abstract: The disclosure provides methods of examining the binding of proteins to DNA across a genome (e.g., the entire genome or a portion thereof, such as one or more chromosomes or a chromosome regions). In particular, the disclosure relates to a method of identifying a regulatory region (e.g., a protein or enhancer region) of genomic DNA to which a protein of interest binds. In one aspect, the disclosure looks at tissue related regulation. In another aspect, the disclosure looks at developmental related regulation. In yet another aspect, the disclosure looks at regulation of expression in a particular disease state or disorder.