Abstract: One or more magnetic tunneling junction (MTJ) pillars are disposed on a substrate. The pillars have one or more magnetic reference layers and one or more magnetic free layers. The magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. A boron-containing encapsulation layer encapsulates the MTJ pillar(s) and is in direct contact with the magnetic free layer external surfaces. The boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. Embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick.

Abstract: A lens assembly includes a lens barrel, a plurality of lenses arranged inside the lens barrel along an optical axis, and a cover member fixed to an end of the lens barrel on a subject side and fixing a last lens of the plurality of lenses on the subject side, wherein outer diameters of the plurality of lenses decrease from the subject side to an image side, and an outer diameter of the lens barrel is constant or smaller from the subject side to the image side.

Abstract: A substrate processing apparatus includes a photoresist coater applying a photoresist film on a substrate, a humidifier increasing an amount of moisture in an ambient to which the photoresist film on the substrate is exposed, and an exposer irradiating the photoresist film exposed to the ambient having the increased amount of moisture with light. The humidifier is disposed between the photoresist coater and the exposer.

Abstract: Disclosed is an anodeless all-solid-state battery which may effectively control local volume expansion due to lithium deposited during charging of the battery. The all-solid-state battery includes an anode current collector, an intermediate layer located on the anode current collector, a solid electrolyte layer located on the intermediate layer, a cathode active material layer located on the solid electrolyte layer and including a cathode active material, and a cathode current collector located on the cathode active material layer. The intermediate layer includes carbon particles and metal particles alloyable with lithium, and the carbon particles include a first carbon material, e.g., as a spherical carbon material, and a second carbon material, e.g., a linear carbon material.

Abstract: A semiconductor memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) structure disposed over the bottom electrode, a seed layer disposed between the MTJ structure and the bottom electrode, and a non-magnetic amorphous insertion layer disposed between the seed layer and the bottom electrode.

Abstract: Diagnostic assay devices for detecting the presence of an analyte in a sample solution may comprise a microreactor configured to form a sample solution containing the analyte, flow the sample solution therethrough in a first direction to form an analyte-capture molecule complex, and transfer the sample solution to an absorbent strip pad configured to flow therethrough, in a second direction crossing the first direction, the sample solution including the analyte-capture molecule complex and indicate a presence of the analyte-capture molecule complex. The diagnostic devices may be used, for example, to identify the presence of SARS-Cov2, RSV, influenza A, influenza B or other pathogens in samples from patients.

Abstract: Diagnostic assay devices for detecting the presence of an analyte in a sample solution may comprise a microreactor configured to form a sample solution containing the analyte, flow the sample solution therethrough in a first direction to form an analyte-capture molecule complex, and transfer the sample solution to an absorbent strip pad configured to flow therethrough, in a second direction crossing the first direction, the sample solution including the analyte-capture molecule complex and indicate a presence of the analyte-capture molecule complex. The diagnostic devices may be used, for example, to identify the presence of SARS-Cov2, RSV, influenza A, influenza B or other pathogens in samples from patients.

Abstract: An exemplary embodiment of the present disclosure is an electric vehicle charger control system linked with an EMS including a communication unit which receives allowable power information which is information about available power to charge an electric vehicle from an energy management system (EMS); a management unit which generates charger setting information which is information about charging setting in consideration of at least one of a priority for every charger, a maximum/minimum charging power amount for every charger, a current charging power amount for every charger, and reservation state information of the user, for the plurality of electric vehicle chargers, using the allowable power information; and a control unit which controls the plurality of electric vehicle chargers according to the charger setting information for every charger.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: Equipment for manufacturing a separator plate for a fuel cell comprises: a press which receives a conveyed first metal strip and second metal strip, vertically arranges the metal strips side by side, and forms patterns on each of the first metal strip and the second metal strip; a welding machine which overlaps the first metal strip and the second metal strip conveyed from the press, and integrally joins the metal strips by welding same in a state in which the patterns are aligned face-to-face with each other; and guide rolls which are arranged in front of and behind the press and guide the first metal strip so that the first metal strip is supplied to the welding machine at an overlapping position with the second metal strip after passing through the press at a position spaced vertically apart from the second metal strip.

Abstract: An exemplary embodiment of the present disclosure is an electric vehicle charger control system linked with an EMS including a communication unit which receives allowable power information which is information about available power to charge an electric vehicle from an energy management system (EMS); a management unit which generates charger setting information which is information about charging setting in consideration of at least one of a priority for every charger, a maximum/minimum charging power amount for every charger, a current charging power amount for every charger, and reservation state information of the user, for the plurality of electric vehicle chargers, using the allowable power information; and a control unit which controls the plurality of electric vehicle chargers according to the charger setting information for every charger.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: Provided are a smart outlet for charging an electric vehicle and a charging method utilizing the same. A smart outlet for charging an electric vehicle includes: a cost-charging determining unit which determines whether to charge by comparing a consumed electric energy of an external device corresponding to a plug coupled to the smart outlet and a predetermined allowable electric energy; a short-range wireless communication unit which receives payment information for supplying the power to the external device based on the determination of whether to charge, from a user terminal; and a power supplying unit which supplies the power to the external device.

Abstract: Neuron circuit structures are presented which employ magnetic tunnel junction (MTJ) elements that change state probabilistically in response to application of electrical source currents that emulate synaptic activity. Some implementations form probabilistic neuron circuits using homogeneous perpendicular spin-transfer torque (STT) MTJ elements. These neuron circuits include a perpendicular STT reference MTJ element coupled via an electrical node with a perpendicular STT neuron MTJ element that can change state. The electrical node for each neuron circuit couples a neuron MTJ element or “perturbation” element to a reference element, and also to an electrical current employed to influence probabilistic magnetization state changes in the perturbation MTJ element. A read current can be applied to the perturbation element to produce an output voltage at the electrical node indicative of a magnetization state of the perturbation element.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.

Abstract: Neuron circuit structures are presented which employ magnetic tunnel junction (MTJ) elements that change state probabilistically in response to application of electrical source currents that emulate synaptic activity. Some implementations form probabilistic neuron circuits using homogeneous perpendicular spin-transfer torque (STT) MTJ elements. These neuron circuits include a perpendicular STT reference MTJ element coupled via an electrical node with a perpendicular STT neuron MTJ element that can change state. The electrical node for each neuron circuit couples a neuron MTJ element or “perturbation” element to a reference element, and also to an electrical current employed to influence probabilistic magnetization state changes in the perturbation MTJ element. A read current can be applied to the perturbation element to produce an output voltage at the electrical node indicative of a magnetization state of the perturbation element.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.