Abstract: An integrated circuit system includes a host device; and a memory module suitable for communicating with the host device according to a first protocol, the memory module comprising: at least one memory device suitable for storing data or outputting stored data, and executing communication according to a second protocol; and a protocol converter suitable for transferring information among the host device and the at least one memory device, wherein information to be inputted to the at least one memory device is transferred by being converted according to the second protocol and information to be outputted from the at least one memory device is transferred by being converted according to the first protocol.

Abstract: A memory system may include a memory device including N (N is an integer of 1 or more) physical banks and a memory controller suitable for communicating with a host using M (M is an integer greater than N) logical banks and for communicating with the memory device. The memory controller may include M row buffers corresponding to the respective M logical banks, for caching the data of the respective M logical banks and an address translator for performing an address translation between a logical address used for communication with the host and a physical addresses used for communication with the memory device.

Abstract: A semiconductor device may include: a storage unit configured to store program codes provided through control of a processor core; and a control unit configured to perform a control operation on a semiconductor memory device according to the program codes.

Abstract: A semiconductor system may include a plurality of memory devices corresponding to a plurality of channels, an address mapping unit suitable for converting addresses corresponding to provided external requests according to a selected address map among a plurality of address maps; a monitoring unit suitable for monitoring the external requests provided to each of the plurality of channels, and a control unit suitable for providing a control signal for controlling the address mapping unit to select an address map according to a result of the monitoring.

Abstract: A memory controller includes a request queue that stores requests provided from an external device, a scheduler that calculates a score for each request included in the request queue and determines a processing order of the requests based on the scores for the requests, and a weight generation circuit that generates a weight vector including weights used to calculated the scores.

Abstract: A memory controller includes a scheduler that decides a processing order of a plurality of requests provided from an external device with reference to a timing parameter value for each of the requests; and a timing control circuit that adjusts the timing parameter value according to a corresponding address to access a memory device, the corresponding address being used to process a corresponding request of the plurality of requests.

Abstract: A semiconductor apparatus includes a first memory die; a second memory die; and a processor configured to provide an external command, an external start address and an external end address which are associated with a read operation, to the first memory die, and provide an external command, an external start address and an external end address, which are associated with a write operation, to the second memory die, in the case where data stored in the first memory die is to be transferred to and stored in the second memory die.

Abstract: A semiconductor device includes a controller configured to receive a request for a first memory device, determine whether or not a multi-bit error has occurred at a requested address of the first memory device, and process the request on a second memory device instead of the first memory device, when the multi-bit error has occurred.

Abstract: A semiconductor device comprises: a read queue configured to store one or more read requests to a semiconductor memory device; a write queue configured to store one or more write requests to the semiconductor memory device; and a dispatch block configured to determine a scheduling order of the one or more read requests and the one or more write requests and switch to the read queue or to the write queue if a request exists in a Row Hit state in the read queue or in the write queue.

Abstract: A memory system includes a memory unit and a memory controller. The memory unit includes a plurality of memory banks, wherein an information stored in a memory bank is accessed via a word line and a bit line. The memory controller is configured to limit repetitive accessing of a same word line or a same bit line so that the number of consecutive access is less than a predetermined critical value.

Abstract: A semiconductor device includes a controller configured to control a first memory device to process a request for the first memory device. The controller receives the request for the first memory device, determines a data damage risk of cells connected to one or more second signal lines adjacent to a first signal line of the first memory device corresponding to a requested address by referring to information indicating a data damage risk, and restore data in one or more cells of the cells connected to the second signal line when determining that there is the data damage risk.

Abstract: A semiconductor device includes a first stage register for storing events occurring for a first period, a second stage register for storing events occurring for a second period shorter than the first period and a controller for controlling the second stage register to select events from the second stage register each having a reference value larger than a second threshold value to the first stage register and for controlling the first stage register to store events which are selected from the second stage register.

Abstract: A semiconductor device includes a controller configured to control a first memory device to process a request for the first memory device and a second memory device. The controller receives the request for the first memory device, determines a data damage risk of cells connected to a second signal line adjacent to a first signal line of the first memory device corresponding to a requested address by referring to information indicating a data damage risk, and stores data of the cells connected to the second signal line in the second memory device when determining that there is a data damage risk.

Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory dies having different page sizes. The memory controller generates a plurality of chip selection signals for activating the plurality of memory dies based on the reordering number of requests received from a processor.

Abstract: A semiconductor device may include a first address cache configured to store a physical address of a semiconductor memory device and a write count associated with the physical address, an address monitor configured to update the physical address and the write count in the first address cache based on a received write request, and an arbiter configured to store a write address and write data associated with the write request in a write cache in response to a command from the address monitor, wherein the command generated by the address monitor is based on whether an update is made to the physical address and the write count in first address cache.

Abstract: A semiconductor device includes a memory region configured to include a plurality of banks and a redundancy region within each of the banks and an error check and correction (ECC) region configured to detect an address of the memory region at which an error has occurred and correct a defect of the memory region by replacing the address at which the error has occurred with a redundancy line of the redundancy region based on address information.

Abstract: A semiconductor memory apparatus includes a test circuit configured to receive a plurality of sequentially-changing test input patterns, compress the received test input patterns at each clock signal, and output the compressed patterns as variable test data.

Abstract: This technology relates to smoothly performing a test on a memory circuit having a high memory capacity while reducing the size of a test circuit. A test circuit according to the present invention includes a test execution unit configured to perform a test on a target test memory circuit, an internal storage unit configured to store data for the test execution unit, and a conversion setting unit configured to set a part of or the entire storage space of the target test memory circuit as an external storage unit for storing the data for the test execution unit.

Abstract: An operating method of a semiconductor device may comprise monitoring error handling information corresponding to an address of a semiconductor memory device, setting a refresh period for the address considering the error handling information and requesting a refresh request for the address.

Abstract: A semiconductor device may include: a storage unit configured to store program codes provided through control of a processor core; and a control unit configured to perform a control operation on a semiconductor memory device according to the program codes.