Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition comprising a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less.

Abstract: A wafer storage apparatus includes a wafer stacking portion that encloses an internal space with an open front side for receiving a plurality of wafers; a rear cover portion disposed on the back side of the wafer stacking portion; and a gas charging portion that includes a plurality of gas supply blocks disposed on the inner side of the rear cover portion, a plurality of gas supply pipes connected to the gas supply blocks via through holes in the rear cover portion, and a gas supply unit connected to the gas supply pipes.

Abstract: A wafer storage apparatus includes a wafer stacking portion that encloses an internal space with an open front side for receiving a plurality of wafers; a rear cover portion disposed on the back side of the wafer stacking portion; and a gas charging portion that includes a plurality of gas supply blocks disposed on the inner side of the rear cover portion, a plurality of gas supply pipes connected to the gas supply blocks via through holes in the rear cover portion, and a gas supply unit connected to the gas supply pipes.

Abstract: Example embodiments relate to a method of forming a three-dimensional micro pattern or a multi-step pattern using a nano imprinting process and a method of manufacturing a mold to form such a pattern. A molding polymer may be patterned in a one-step shape on a substrate having UV barrier patterns, thereby easing the manufacture of a mold for multi-step imprinting and simplifying the formation of a multi-step pattern using the one-step shaped mold by avoiding the repetition of more complicated processes. Consequently, it may be possible to form a relatively large-area micro pattern, a relatively large-area pattern usable in flat panel displays, and a nano pattern having a size of several tens of nanometers in a semiconductor process, thereby contributing to the reduction of process costs, the reduction of process time, and the improvement of production yield.

Abstract: A UV nanoimprint lithography process and its apparatus that are able to repeatedly fabricates nanostructures on a substrate (wafer, UV-transparent plate) by using a stamp that is as large as or smaller than the substrate in size are provided. The apparatus includes a substrate chuck for mounting the substrate; a stamp made of UV-transparent materials and having more than two element stamps, wherein nanostructures are formed on the surface of each element stamp; a stamp chuck for mounting the stamp; a UV lamp unit for providing UV light to cure resist applied between the element stamps and the substrate; a moving unit for moving the substrate chuck or the stamp chuck to press the resist with the element stamps and substrate; and a pressure supply unit for applying pressurized gas to some selected regions of the substrate to help complete some incompletely filled element stamps.

Abstract: The present invention relates to a micro/nano imprint lithography technique and in particular, to a stamp that is used in an UV-micro/nano imprint lithography process or thermal micro/nano imprint lithography process and a method for fabricating the stamp. The method for fabricating a stamp for micro/nano imprint lithography of the present invention includes i) depositing a thin film of diamond-like carbon on a substrate, ii) applying resist on the diamond-like carbon thin film, iii) patterning the resist, iv) etching the diamond-like carbon thin film by using the resist as a protective layer, and v) removing the resist.

Abstract: Example embodiments relate to a method of forming a three-dimensional micro pattern or a multi-step pattern using a nano imprinting process and a method of manufacturing a mold to form such a pattern. A molding polymer may be patterned in a one-step shape on a substrate having UV barrier patterns, thereby easing the manufacture of a mold for multi-step imprinting and simplifying the formation of a multi-step pattern using the one-step shaped mold by avoiding the repetition of more complicated processes. Consequently, it may be possible to form a relatively large-area micro pattern, a relatively large-area pattern usable in flat panel displays, and a nano pattern having a size of several tens of nanometers in a semiconductor process, thereby contributing to the reduction of process costs, the reduction of process time, and the improvement of production yield.

Abstract: A UV nanoimprint lithography process and its apparatus that are able to repeatedly fabricates nanostructures on a substrate (wafer, UV-transparent plate) by using a stamp that is as large as or smaller than the substrate in size are provided. The apparatus includes a substrate chuck for mounting the substrate; a stamp made of UV-transparent materials and having more than two element stamps, wherein nanostructures are formed on the surface of each element stamp; a stamp chuck for mounting the stamp; a UV lamp unit for providing UV light to cure resist applied between the element stamps and the substrate; a moving unit for moving the substrate chuck or the stamp chuck to press the resist with the element stamps and substrate; and a pressure supply unit for applying pressurized gas to some selected regions of the substrate to help complete some incompletely filled element stamps.

Abstract: A UV nanoimprint lithography process and its apparatus that are able to repeatedly fabricates nanostructures on a substrate (wafer, UV-transparent plate) by using a stamp that is as large as or smaller than the substrate in size are provided. The apparatus includes a substrate chuck for mounting the substrate; a stamp made of UV-transparent materials and having more than two element stamps, wherein nanostructures are formed on the surface of each element stamp; a stamp chuck for mounting the stamp; a UV lamp unit for providing UV light to cure resist applied between the element stamps and the substrate; a moving unit for moving the substrate chuck or the stamp chuck to press the resist with the element stamps and substrate; and a pressure supply unit for applying pressurized gas to some selected regions of the substrate to help complete some incompletely filled element stamps.

Abstract: Disclosed are a mask mold, a manufacturing method thereof, and a method for forming a large-sized micro pattern using the manufactured mask mold, in which the size of a nano-level micro pattern can be enlarged using a simple method with low cost and interference and stitching errors between cells forming a large area can be minimized. The method for manufacturing the mask mold includes the operations of coating resist on a mask or a plurality of small molds having an engraved micro pattern, pressing the small molds to imprint the micro pattern on the resist, curing the resist, and releasing the small molds from the resist.

Abstract: A microcontact printing method using an imprinted nanostructure is provided, wherein the microcontact printing is introduced to a nanoimprint lithography process to pattern a self-assembled monolayer (SAM). The method includes forming a nanostructure on a substrate by using the nanoimprint lithography process; and patterning the nanostructure with the microcontact printing method. The operation of patterning includes: depositing a metal thin film on the nanostructure; contacting a plate with the nanostructure to selectively print the SAM on the nanostructure, wherein the SAM is inked on the plate and the metal thin film is deposited on the nanostructure; selectively removing the metal thin film by using the SAM as a mask; removing the SAM from the nanostructure; and patterning the substrate by using the remaining metal thin film on the nanostructure as a mask.

Abstract: The present invention relates to a micro/nano imprint lithography technique and in particular, to a stamp that is used in an UV-micro/nano imprint lithography process or thermal micro/nano imprint lithography process and a method for fabricating the stamp. The method for fabricating a stamp for micro/nano imprint lithography of the present invention includes i) depositing a thin film of diamond-like carbon on a substrate, ii) applying resist on the diamond-like carbon thin film, iii) patterning the resist, iv) etching the diamond-like carbon thin film by using the resist as a protective layer, and v) removing the resist.

Abstract: A UV nanoimprint lithography process for forming nanostructures on a substrate. The process includes depositing a resist on a substrate; contacting a stamp having formed thereon nanostructures at areas corresponding to where nanostructures on the substrate are to be formed to an upper surface of the resist, and applying a predetermined pressure to the stamp in a direction toward the substrate, the contacting and applying being performed at room temperature and at low pressure; irradiating ultraviolet rays onto the resist; separating the stamp from the resist; and etching an upper surface of the substrate on which the resist is deposited. The stamp is an elementwise embossed stamp that comprises at least two element stamps, and grooves formed between adjacent element stamps and having a depth that is greater than a depth of the nanostructures formed on the element stamps.

Abstract: A microcontact printing method using an imprinted nanostructure is provided, wherein the microcontact printing is introduced to a nanoimprint lithography process to pattern a self-assembled monolayer (SAM) The method includes forming a nanostructure on a substrate by using the nanoimprint lithography process; and patterning the nanostructure with the microcontact printing method. The operation of patterning includes: depositing a metal thin film on the nanostructure; contacting a plate with the nanostructure to selectively print the SAM on the nanostructure, wherein the SAM is inked on the plate and the metal thin film is deposited on the nanostructure; selectively removing the metal thin film by using the SAM as a mask; removing the SAM from the nanostructure; and patterning the substrate by using the remaining metal thin film on the nanostructure as a mask.

Abstract: A UV nanoimprint lithography process for forming nanostructures on a substrate. The process includes depositing a resist on a substrate; contacting a stamp having formed thereon nanostructures at areas corresponding to where nanostructures on the substrate are to be formed to an upper surface of the resist, and applying a predetermined pressure to the stamp in a direction toward the substrate, the contacting and applying being performed at room temperature and at low pressure; irradiating ultraviolet rays onto the resist; separating the stamp from the resist; and etching an upper surface of the substrate on which the resist is deposited. The stamp is an elementwise embossed stamp that comprises at least two element stamps, and grooves formed between adjacent element stamps and having a depth that is greater than a depth of the nanostructures formed on the element stamps.