Abstract: Provided is a Petri dish, which improves or maximizes productivity. The Petri dish includes a dish including a bottom and a side wall, and accommodating a culture solution, and a cover covering an upper portion of the dish. The bottom of the dish includes a support region having a first thickness, and a measurement region having a second thickness smaller than the first thickness.

Abstract: An apparatus and method for managing a dynamic bandwidth allocation to support a low-power mode, in a passive optical network (PON) are provided. The apparatus may include a power saving mode managing unit to manage a power saving mode of at least one optical network unit (ONU), a bandwidth allocation parameter storage unit to store a bandwidth allocation parameter used for a power saving mode, and to maintain the stored bandwidth allocation parameter, and a dynamic bandwidth allocating unit to provide bandwidth allocation information to the at least one ONU, when the stored bandwidth allocation parameter is received.

Abstract: There are provided a sensor data processing apparatus, and a sensor data distributed processing system including the same. The sensor data distributed processing system includes: a plurality of sensors; one or more sensor data processing apparatuses each configured to compress a sensor signal received from at least one of a plurality of sensors, to create a compressed sensor signal, to adjust the sensor signal based on a reliability of the sensor signal, to analyze the adjusted sensor signal to provide analysis data, to synchronize the compressed sensor signal with the analysis data, to transmit the synchronized sensor data, and to provide management data to a corresponding sensor; and a sensor data management apparatus configured to monitor synchronized sensor data received from each sensor data processing apparatus, and to provide management data to the sensor data processing apparatus.

Abstract: Provided is an image extraction method of optical phase extraction system. The image extraction method may include checking whether a phase error due to an environmental disturbance of optical fiber occurs by monitoring an output signal obtained by interfering reflection optical signals reflected through two paths. When a phase error occurs, an error is compensated using a phase compensation control method of closed loop type through one of the two paths and an image is extracted by capturing an image of object in a state that the image of object is shifted by the set phase value when a phase error is compensated. According to the inventive concept, a phase error occurring in an optical fiber type interferometer due to an environmental disturbance is minimized or compensated. Also, since an interference image accurately shifted by the phase value set among arbitrary various phase values is obtained through a camera, reliability of three-dimensional phase information being extracted is guaranteed.

Abstract: Disclosed are an optical probe using a sensor and a method for controlling the same. The optical probe includes: an optical converter to change a light path of light generated from a light source; a vibrator to convert an electrical signal into a mechanical motion; a transmission member to transmit the motion of the vibrator to the optical converter; a position sensor to sense the position of the optical converter; and a controller to adjust the position of the optical converter by controlling the vibrator based on the position sensed by the position sensor.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Abstract: There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

Abstract: A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature.

Abstract: Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.

Abstract: Provided is a method of obtaining spatial images on demand. The server segments a spatial image into a plurality of regions to detect an isolated region whose continuity with peripheral regions is less than a threshold value, generates geographic information corresponding to the detected isolated region, and generates a capture request message including the generated geographic information. In addition, the capture request message may be transmitted to at least one terminal using unicast scheme, a multicast scheme, an anycast scheme, or a broadcast scheme. The capture request message may comprise a capture condition value such as a capture direction, a capture angle, a capture time, a zoom information and an exposure value. At least one terminal which meets the capture condition value within the capture request message transmits a captured image to the server.

Abstract: Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.

Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

Abstract: There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

Abstract: A Passive Optical Network (PON)-based system and method for providing handover between Optical Network Terminals (ONTs) are provided. The PON-based system may include an Optical Line Terminal (OLT), and an ONT to relay communication between the OLT and a mobile terminal. When the mobile terminal is connected to the ONT, the ONT may transmit a WiFi location update alarm message to the OLT, and the OLT may update a Look-Up Table (LUT) in response to the WiFi location update alarm message.

Abstract: Nonvolatile memory devices and related methods of manufacturing the same are provided. A nonvolatile memory device includes a tunneling layer on a substrate, a floating gate on the tunneling layer, an inter-gate dielectric layer structure on the floating gate, and a control gate on the inter-gate dielectric layer structure. The inter-gate dielectric layer structure includes a first silicon oxide layer, a high dielectric layer on the first silicon oxide layer, and a second silicon oxide layer on the high dielectric layer opposite to the first silicon oxide layer The high dielectric layer may include first and second high dielectric layers laminated on each other, and the first high dielectric layer may have a lower density of electron trap sites than the second high dielectric layer and may have a larger energy band gap or conduction band-offset than the second high dielectric layer.

Abstract: A method and an apparatus for providing a picture file are provided. The picture file providing apparatus includes a controller which searches for one or more picture files based on a location of a subject, and a screen display unit which forms a display screen to display the one or more picture files that were found, in order to provide a user with the direction information included in each picture file. Each picture file includes picture data, information on a location in which the picture data was created, and information on a direction of a captured image of a subject included in the picture data.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

Abstract: Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.

Abstract: An apparatus and method for driving a display panel, and more particularly, an apparatus and method for easily generating a programmable signal to drive a digital display panel without re-designing a drive signal generating apparatus according to the specifications of the digital display panel including its size, the number of scan lines, and types of input signals. The apparatus includes a memory, a decoder, and an output waveform generating circuit. The memory stores information to generate a plurality of drive pulse signals necessary for driving the display panel. The decoder reads information stored in an address assigned according to a predetermined control sequence from the memory and then edits the read information so as to be suitable for specifications of the display panel. The output waveform generating circuit generates drive pulse signals corresponding to the information read by the decoder.