Patents by Inventor Young Sun Oh

Young Sun Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145263
    Abstract: According to an aspect of the present disclosure, there is provided a substrate treating apparatus comprising: a vessel part having a substrate treatment region formed therein and including a supply port through which a treating fluid is supplied to the substrate treatment region and an exhaust port through which the treating fluid is exhausted from the substrate treatment region; a fluid supply unit configured to supply the treating fluid to the substrate treatment region; an exhaust unit configured to exhaust the treating fluid from the vessel part. The exhaust unit comprises: a main line connected to the exhaust port; an extension line branched from at least one of first and second nodes of the main line and including at least one of a first orifice or a first check valve to control an exhaust speed; and an auxiliary line branched from a third node of the main line, where an orifice and a check valve are not formed.
    Type: Application
    Filed: January 20, 2023
    Publication date: May 2, 2024
    Inventors: Seung Hoon OH, Ki Bong KIM, Jong Doo LEE, Young Hun LEE, Mi So PARK, Jin Se PARK, Yong Sun KO
  • Publication number: 20240142171
    Abstract: A substrate treating apparatus of the present disclosure comprises: a chamber member having an accommodation space configured to accommodate a vessel part where a substrate treatment region constituting a supercritical treatment space are formed, and an opening configured to move the substrate inside or outside; a shutter configured to open or close the chamber member; and a first exhaust part configured to discharge an internal air from the accommodation space to the outside, wherein the temperature of the substrate treatment region is increased.
    Type: Application
    Filed: January 20, 2023
    Publication date: May 2, 2024
    Inventors: Seung Hoon OH, Ji Hyeong LEE, Jin Se PARK, Yong Joon IM, Young Hun LEE, Yong Sun KO
  • Patent number: 11974452
    Abstract: A protection film for an electronic device includes an adhesive layer including a first surface to which an electronic device is attached, and a film layer which contacts a second surface of the adhesive layer and includes at least one member, where a thickness of the adhesive layer satisfies Inequality 1: z?(5.1x+57.4)┬Ěln(y)?(14.7x+140.5), where z is the thickness of the adhesive layer in terms of micrometers, x is a modulus of a member of the film layer which directly contacts the adhesive layer in terms of gigapascals, and y is a total thickness of the film layer in terms of micrometers.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: April 30, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Young Eun Oh, Jai Ku Shin, Han Sun Ryou, So Dam Ahn, Jang Doo Lee
  • Publication number: 20240128290
    Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 18, 2024
    Inventors: Seung Hyun LEE, Young Chan KIM, Young Gu JIN, Young Sun OH
  • Publication number: 20240086603
    Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Applicant: SAMSUNG ELECTRONICS CO, LTD.
    Inventors: In HUH, Jeong-hoon KO, Hyo-jin CHOI, Seung-ju KIM, Chang-wook JEONG, Joon-wan CHAI, Kwang-II PARK, Youn-sik PARK, Hyun-sun PARK, Young-min OH, Jun-haeng LEE, Tae-ho LEE
  • Publication number: 20230328408
    Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.
    Type: Application
    Filed: January 18, 2023
    Publication date: October 12, 2023
    Inventors: Young Gu JIN, Young Sun OH
  • Publication number: 20230275041
    Abstract: An image sensor includes a substrate having a first surface and a second surface opposing to the first surface, first pixel separation patterns defining a plurality of unit pixels, which include photoelectric conversion regions in the substrate, each of the first pixel separation patterns including a first conductive film and a second conductive film on the first conductive film, and microlenses on the second surface of the substrate, wherein the first conductive film extends along sidewalls of the second conductive film to separate the second conductive film from the substrate, the first conductive film has a greater reflectance than the second conductive film for a predetermined wavelength range, and the second conductive film has a greater step coverage than the first conductive film.
    Type: Application
    Filed: October 26, 2022
    Publication date: August 31, 2023
    Inventors: Young Gu JIN, Jung Chak AHN, Young Sun OH
  • Publication number: 20230189404
    Abstract: The present disclosure relates to a surface heating heater pipe and an aerosol generating device including the same, and more particularly, to a surface heating heater pipe having improved performance by implementing a surface heating structure using graphene and an aerosol generating device including the same. A heater pipe for an aerosol generating device for transferring heat to an aerosol-forming article includes a body formed of metal and having a shape of a pipe having a space for accommodating the aerosol-forming article, a first insulating layer formed on an outer surface of the body, a graphene layer formed on the first insulating layer by deposition, and a second insulating layer formed on the graphene layer.
    Type: Application
    Filed: December 12, 2022
    Publication date: June 15, 2023
    Inventors: Han Seok Chae, Il Kwon Song, Young Sun Oh, Beom Chang Oh
  • Publication number: 20230106108
    Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
    Type: Application
    Filed: December 8, 2022
    Publication date: April 6, 2023
    Applicant: SAMSUNG ELECTRONICS CFO., LTD.
    Inventors: Young-sun OH, Hee-sang Kwon
  • Patent number: 11527567
    Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: December 13, 2022
    Assignee: SAMSUNG ELECTRONICS CO.. LTD.
    Inventors: Young-sun Oh, Hee-sang Kwon
  • Patent number: 11424285
    Abstract: An image sensor includes a first pixel separation structure in a substrate to separate pixels from each other. The first pixel separation structure includes a conductive layer therein. Moreover, the image sensor includes a wire layer that is spaced apart from the conductive layer on the substrate. A second pixel separation structure is adjacent to the first pixel separation structure in a first horizontal direction and is connected to a contact. The first and second pixel separation structures extend longitudinally in a second horizontal direction that is perpendicular to the first horizontal direction.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: August 23, 2022
    Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
  • Patent number: 11205672
    Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: December 21, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-sun Oh, Hee-sang Kwon
  • Publication number: 20200343294
    Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
  • Publication number: 20200303430
    Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-sun Oh, Hee-sang Kwon
  • Patent number: 10748955
    Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: August 18, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
  • Patent number: 10573682
    Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Sun Oh, Yi-Tae Kim, Yu-Jung Choi
  • Publication number: 20190267415
    Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
    Type: Application
    Filed: May 13, 2019
    Publication date: August 29, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-sun OH, Hee-sang Kwon
  • Publication number: 20190221600
    Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.
    Type: Application
    Filed: October 30, 2018
    Publication date: July 18, 2019
    Inventors: Young-Sun Oh, Yi-Tae Kim, Yu-Jung Choi
  • Patent number: 10332925
    Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: June 25, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-sun Oh, Hee-sang Kwon
  • Patent number: 10128288
    Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Sun Oh, Jung Chak Ahn, Young Woo Jung