Patents by Inventor Young Sun Oh
Young Sun Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128290Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.Type: ApplicationFiled: October 3, 2023Publication date: April 18, 2024Inventors: Seung Hyun LEE, Young Chan KIM, Young Gu JIN, Young Sun OH
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Publication number: 20230328408Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.Type: ApplicationFiled: January 18, 2023Publication date: October 12, 2023Inventors: Young Gu JIN, Young Sun OH
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Publication number: 20230275041Abstract: An image sensor includes a substrate having a first surface and a second surface opposing to the first surface, first pixel separation patterns defining a plurality of unit pixels, which include photoelectric conversion regions in the substrate, each of the first pixel separation patterns including a first conductive film and a second conductive film on the first conductive film, and microlenses on the second surface of the substrate, wherein the first conductive film extends along sidewalls of the second conductive film to separate the second conductive film from the substrate, the first conductive film has a greater reflectance than the second conductive film for a predetermined wavelength range, and the second conductive film has a greater step coverage than the first conductive film.Type: ApplicationFiled: October 26, 2022Publication date: August 31, 2023Inventors: Young Gu JIN, Jung Chak AHN, Young Sun OH
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Publication number: 20230189404Abstract: The present disclosure relates to a surface heating heater pipe and an aerosol generating device including the same, and more particularly, to a surface heating heater pipe having improved performance by implementing a surface heating structure using graphene and an aerosol generating device including the same. A heater pipe for an aerosol generating device for transferring heat to an aerosol-forming article includes a body formed of metal and having a shape of a pipe having a space for accommodating the aerosol-forming article, a first insulating layer formed on an outer surface of the body, a graphene layer formed on the first insulating layer by deposition, and a second insulating layer formed on the graphene layer.Type: ApplicationFiled: December 12, 2022Publication date: June 15, 2023Inventors: Han Seok Chae, Il Kwon Song, Young Sun Oh, Beom Chang Oh
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Publication number: 20230106108Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: ApplicationFiled: December 8, 2022Publication date: April 6, 2023Applicant: SAMSUNG ELECTRONICS CFO., LTD.Inventors: Young-sun OH, Hee-sang Kwon
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Patent number: 11527567Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: GrantFiled: June 8, 2020Date of Patent: December 13, 2022Assignee: SAMSUNG ELECTRONICS CO.. LTD.Inventors: Young-sun Oh, Hee-sang Kwon
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Patent number: 11424285Abstract: An image sensor includes a first pixel separation structure in a substrate to separate pixels from each other. The first pixel separation structure includes a conductive layer therein. Moreover, the image sensor includes a wire layer that is spaced apart from the conductive layer on the substrate. A second pixel separation structure is adjacent to the first pixel separation structure in a first horizontal direction and is connected to a contact. The first and second pixel separation structures extend longitudinally in a second horizontal direction that is perpendicular to the first horizontal direction.Type: GrantFiled: July 9, 2020Date of Patent: August 23, 2022Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
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Patent number: 11205672Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: GrantFiled: May 13, 2019Date of Patent: December 21, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-sun Oh, Hee-sang Kwon
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Publication number: 20200343294Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.Type: ApplicationFiled: July 9, 2020Publication date: October 29, 2020Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
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Publication number: 20200303430Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: ApplicationFiled: June 8, 2020Publication date: September 24, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Young-sun Oh, Hee-sang Kwon
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Patent number: 10748955Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.Type: GrantFiled: December 9, 2016Date of Patent: August 18, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
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Patent number: 10573682Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.Type: GrantFiled: October 30, 2018Date of Patent: February 25, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Sun Oh, Yi-Tae Kim, Yu-Jung Choi
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Publication number: 20190267415Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: ApplicationFiled: May 13, 2019Publication date: August 29, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-sun OH, Hee-sang Kwon
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Publication number: 20190221600Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.Type: ApplicationFiled: October 30, 2018Publication date: July 18, 2019Inventors: Young-Sun Oh, Yi-Tae Kim, Yu-Jung Choi
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Patent number: 10332925Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: GrantFiled: September 8, 2017Date of Patent: June 25, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-sun Oh, Hee-sang Kwon
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Patent number: 10128288Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.Type: GrantFiled: August 5, 2016Date of Patent: November 13, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young Sun Oh, Jung Chak Ahn, Young Woo Jung
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Patent number: 10096632Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.Type: GrantFiled: February 6, 2017Date of Patent: October 9, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young Sun Oh, Yi Tae Kim, Jung Chak Ahn
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Publication number: 20180197904Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.Type: ApplicationFiled: September 8, 2017Publication date: July 12, 2018Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-sun Oh, Hee-sang Kwon
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Patent number: 9960201Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.Type: GrantFiled: August 20, 2015Date of Patent: May 1, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Ho Lee, Seung Joo Nah, Young Sun Oh, Dong Young Jang
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Patent number: 9806113Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.Type: GrantFiled: April 3, 2017Date of Patent: October 31, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong