Abstract: An anode active material for a secondary battery according to an embodiment of the disclosed technology includes an anode current collector, a first anode active material layer on at least one surface of the anode current collector and including a graphite-based active material and a silicon-based active material doped with a metal element, and a second anode active material layer on the first anode active material layer and including a porous structure. The porous structure includes a carbon-based particle having pores and a silicon-containing coating formed inside the pores or on a surface of the carbon-based particle.

Abstract: The present invention relates to novel mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, a novel crystalline form thereof, and a process for preparing the same. More specifically, the present invention relates to mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, which is excellent in stability, solubility, and bioavailability when it is administered not only alone but also in combination with other drugs and which has a high purity, a crystalline form thereof, and a process for preparing the same.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: A high voltage generator provides a high voltage signal for compensating a threshold voltage loss in a semiconductor memory device. The high voltage generator includes: a level detection unit for detecting a voltage level of the high voltage signal to generate a high voltage enable signal when the voltage level of the high voltage signal reaches a predetermined target value; an oscillation unit, in response to the high voltage enable signal, for generating a plurality of clocks, the clocks including a first to a fourth clocks; a high-voltage charge pump unit, in response to the clocks, for increasing a voltage level of an external power signal to generate the high voltage signal to a high voltage node; and a power-on precharging unit, in response to a control signal, for initializing the high voltage node to a predetermined level.

Abstract: A high voltage generator provides a high voltage signal for compensating a threshold voltage loss in a semiconductor memory device. The high voltage generator includes: a level detection unit for detecting a voltage level of the high voltage signal to generate a high voltage enable signal when the voltage level of the high voltage signal reaches a predetermined target value; an oscillation unit, in response to the high voltage enable signal, for generating a plurality of clocks, the clocks including a first to a fourth clocks; a high-voltage charge pump unit, in response to the clocks, for increasing a voltage level of an external power signal to generate the high voltage signal to a high voltage node; and a power-on precharging unit, in response to a control signal, for initializing the high voltage node to a predetermined level.