Abstract: An electromagnetic interference (EM) shielding filter includes a conductive pattern for shielding electromagnetic waves; and blackened layers formed on a surface of the conductive pattern. The electromagnetic interference (EMI) shielding filter is manufactured by preparing a base film; forming on the base film a first blackened layer, a conductive layer, and a second blackened layer in sequence; and patterning the first blackened layer, the conductive layer, and the second blackened layer by using a same mask, and forming on front and rear surfaces of an EMI shielding layer a conductive pattern comprising the first and second blackened layers.

Abstract: Disclosed is a plasma display apparatus in which film-type front filter is connected. A plasma display apparatus of the present invention includes a panel formed by attaching an upper substrate to a lower substrate, an front filter attached to an entire surface of the panel and including extensions extending by predetermined lengths from edges of the panel in omni-directions, a back cover formed on a rear surface of the chassis base, and a filter supporter for electrically connecting the extensions to the back covers. The filter supporter is connected to the compass.

Abstract: A front filter being attached to a front surface of a flat panel display device includes a NIR (near infrared ray) blocking film for blocking the emission of near infrared rays to outside; an EMI (electromagnetic interference) shielding film for absorbing electromagnetic waves and for preventing the electromagnetic waves from being emitted to outside; a glass formed on a front surface of the EMI shielding film; and an antireflection coating for preventing incident rays from outside from reflecting back to the outside, in which the EMI shielding film includes a mesh unit formed of conductive meshes that are intersected with each other; and a mesh frame for surrounding the mesh unit to support the mesh unit and to define an effective display area on a screen.

Abstract: Disclosed is a plasma display apparatus having the same in which an electromagnetic wave is not only shielded, but also a transmission rate can be secured. The front filter including: an electromagnetic-wave shield film having a conductive powder decentralized therein, for shielding an electromagnetic wave. At this time, in order to form the electromagnetic-wave shield film, a mixture of the conductive powder and a predetermined synthetic resin is coated on a base film.

Abstract: The present invention relates to a front filter having a touch screen, and a plasma display apparatus having the same. The front filter installed on a front surface of a panel of a plasma display apparatus, the front filter including: a touch screen for generating a coordinate signal with respect to a touch point.

Abstract: Disclosed is a front filter in a plasma display panel (PDP), in which the front filter comprises an impact-absorbing layer attached to a front surface of the panel and composed of one of EVA, acrylic polymers, and PVC to be able to absorb external impacts.

Abstract: Disclosed is a front filter attached to a front surface of a plasma display panel, the front filter comprising: an antireflection coating for preventing reflection of incident light from outside; an optical characteristic film for improving optical characteristics of incident light from the panel, by decreasing brightnesses of red (R) and green (G) rays and by increasing brightness of blue (B) rays; an EMI shielding film for shielding emission of electromagnetic wave; and an NIR blocking film for blocking near infrared rays emitted from the panel, wherein, transmittance of emitted light from the plasma display panel when the emitted light transmits the antireflection coating, the optical characteristic film, the EMI shielding film, and the NIR blocking film is determined in dependence of wavelength of the emitted light, and wherein transmittance of B rays at a wavelength of 454 nm is 50-80%, transmittance of G rays at a wavelength of 525 nm is 40-80%, transmittance of orange rays at a wavelength of 580-592 nm

Abstract: A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices.

Abstract: Disclosed are dielectric devices having a multi-layer oxide artificial lattice and a method for manufacturing the same. The method is adapted for a dielectric device having a substrate, a dielectric film coated on the substrate so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, a dielectric device having a substrate, a bottom electrode deposited on the substrate so as to be patterned thereon, a dielectric film coated on an upper portion of the lower electrode so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, or a dielectric device having a substrate, a bottom electrode deposited on the substrate and selectively patterned thereon, and a dielectric film coated on an upper portion of the bottom electrode so as to be selectively patterned thereon. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness.