Patents by Inventor Young-Tae Kang

Young-Tae Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240123827
    Abstract: A high-voltage battery control apparatus includes a plurality of high-voltage battery controllers configured to respectively monitor states of a plurality of high-voltage batteries included in one high-voltage battery pack depending on a predetermined period for monitoring the high-voltage battery pack, wherein the high-voltage battery controllers are configured to transition state of the plurality of high-voltage battery controllers together to an end state when a high-voltage battery controller among the high-voltage battery controllers, which has completed a monitoring operation, first waits until all monitoring operations of the high-voltage battery controllers that have not yet completed monitoring operations are completed and then all the monitoring operations of the high-voltage battery controllers are completed.
    Type: Application
    Filed: April 14, 2023
    Publication date: April 18, 2024
    Inventors: Geon Woo Park, Young Tae Ko, Hyeon Jun Kim, Byung Mo Kang, Jong Seo Yoon
  • Publication number: 20240092141
    Abstract: An air conditioning device for a vehicle includes: a housing having an inside divided into an inflow space, a heat exchange space, and an outflow space, which are straightly arranged, and having a plurality of discharge ports, which communicates with an interior, at the inflow space; a blowing unit disposed at the inflow space of the housing and configured to blow air; a heat exchange unit disposed at the heat exchange space of the housing and configured to adjust a temperature of conditioned air by exchanging heat with air; and an opening-closing door disposed at the outflow space of the housing and configured to open and close the plurality of discharge ports such that conditioned air at an adjusted temperature selectively flows to the plurality of discharge ports. The air conditioning device adjusts the temperature of conditioned air for respective modes and reduces a flow resistance of air.
    Type: Application
    Filed: March 8, 2023
    Publication date: March 21, 2024
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DOOWON CLIMATE CONTROL CO., LTD.
    Inventors: Kwang Ok Han, Young Tae Song, Yong Chul Kim, Gee Young Shin, Su Yeon Kang, Jae Sik Choi, Dae Hee Lee, Byeong Moo Jang, Ung Hwi Kim, Jae Won Cha, Won Jun Joung, Byung Guk An
  • Patent number: 6761996
    Abstract: The invention is a lithium secondary battery that prevents electrolyte and internal gas leakage by durably sealing the electrolyte injecting hole. The lithium secondary battery consists of a battery can, which contains a polar plate set with an anode plate, and a separator inserted and installed inside the battery can. The opening of the battery can has a cap assembly with an electrolyte injecting hole so that the can interior can be sealed. To seal the battery can, a rivet shaped sealing member is inserted in the electrolyte injecting hole. The sealing member is placed in contact with the cap assembly at an area surrounding the electrolyte injecting hole and affixed to the cap assembly.
    Type: Grant
    Filed: September 20, 2000
    Date of Patent: July 13, 2004
    Assignee: LG Chemical Ltd.
    Inventors: Soo-Ryoung Kim, Jee-Ho Kim, Jeoung-Soo Kim, Young-Tae Kang
  • Patent number: 5278441
    Abstract: A method for fabricating a CMOS field effect transistor with LDD (light doped drain) structure is disclosed. A first gate for an NMOS transistor and a second gate for a PMOS transistor are formed on a semiconductor substrate, and the NMOS and PMOS transistor regions are subjected to different ion implantation processes so as to form a first source and drain of low concentration. After forming a first spacer on the side walls of the gates, the substrate is subjected to another ion implantation so as to form a second source and drain of high concentration for the NMOS transistor. After forming a second spacer on the side surfaces of the first spacers, the substrate is subjected to still another ion implantation so as to form a second source and drain of high concentration for the PMOS transistor. Then is obtained a CMOS transistor provided with a PMOS transistor of LDD structure without increasing the diffusion resistance of an NMOS transistor.
    Type: Grant
    Filed: April 15, 1991
    Date of Patent: January 11, 1994
    Assignee: SamSung Electronics Co. Ltd.
    Inventors: Young-Tae Kang, Rae-Ku Kang, Byoung-Hyeok Nho