Abstract: The invention is a lithium secondary battery that prevents electrolyte and internal gas leakage by durably sealing the electrolyte injecting hole. The lithium secondary battery consists of a battery can, which contains a polar plate set with an anode plate, and a separator inserted and installed inside the battery can. The opening of the battery can has a cap assembly with an electrolyte injecting hole so that the can interior can be sealed. To seal the battery can, a rivet shaped sealing member is inserted in the electrolyte injecting hole. The sealing member is placed in contact with the cap assembly at an area surrounding the electrolyte injecting hole and affixed to the cap assembly.

Abstract: A method for fabricating a CMOS field effect transistor with LDD (light doped drain) structure is disclosed. A first gate for an NMOS transistor and a second gate for a PMOS transistor are formed on a semiconductor substrate, and the NMOS and PMOS transistor regions are subjected to different ion implantation processes so as to form a first source and drain of low concentration. After forming a first spacer on the side walls of the gates, the substrate is subjected to another ion implantation so as to form a second source and drain of high concentration for the NMOS transistor. After forming a second spacer on the side surfaces of the first spacers, the substrate is subjected to still another ion implantation so as to form a second source and drain of high concentration for the PMOS transistor. Then is obtained a CMOS transistor provided with a PMOS transistor of LDD structure without increasing the diffusion resistance of an NMOS transistor.