Abstract: An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern.

Abstract: An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern.

Abstract: Disclosed are a polyester/clay nanocomposite, and a preparation method thereof, comprising mixing a cyclic ester oligomer with a layered clay having an enhanced hydrophobicity and directly polymerizing the cyclic ester oligomer. The polyester/clay nanocomposite has an excellent processibility due to its low melting viscosity and has excellent mechanical and electrical properties. Therefore, it can replace conventional polyester resin applied as electronic material, as well as can be used as a compatibilizing agent for increasing compatibility of the conventional polyester/clay composite.