Abstract: A method for fabricating a nonvolatile memory device includes forming a tunneling insulation layer, a first conductive layer for forming a floating gate, and a hard mask over a substrate. A portion of the hard mask, the first conductive layer, the tunneling insulation layer, and the substrate is etched to form a trench. An isolation structure is formed to fill in the trench. The etched hard mask is removed such that an upper portion of the isolation structure protrudes above the etched first conductive layer. A dielectric layer is formed over the etched first conductive layer. A second conductive layer for forming a control gate is formed over the isolation structure and the dielectric layer. The second conductive layer is polished to align an upper surface of the second conductive layer using an upper surface of the isolation structure.

Abstract: A method for fabricating a nonvolatile memory device includes forming a tunneling insulation layer, a first conductive layer for forming a floating gate, and a hard mask over a substrate. A portion of the hard mask, the first conductive layer, the tunneling insulation layer, and the substrate is etched to form a trench. An isolation structure is formed to fill in the trench. The etched hard mask is removed such that an upper portion of the isolation structure protrudes above the etched first conductive layer. A dielectric layer is formed over the etched first conductive layer. A second conductive layer for forming a control gate is formed over the isolation structure and the dielectric layer. The second conductive layer is polished to align an upper surface of the second conductive layer using an upper surface of the isolation structure.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of gate patterns over a substrate, each gate pattern comprising a hard mask and a gate electrode, forming a photoresist layer over the gate patterns, performing a planarizing process until the hard masks of the gate patterns are exposed using slurry, and removing the photoresist layer. The hard mask includes an oxide-based material.

Abstract: A method of manufacturing a semiconductor device capable of polishing evenly and separating the adjacent word lines by performing the flattening process using slurry with a doping material added during the polishing process.

Abstract: The present invention is provided to manufacture a semiconductor device capable of polishing evenly and separating the adjacent word lines by performing the flattening process using slurry with a doping material added during the polishing process.