Patent number: 9088045
Abstract: A silicon-based negative active material that includes a core including silicon oxide represented by SiOx (0<x<2); and a coating layer including metal oxide, and the metal of the metal oxide includes aluminum (Al), titanium (Ti), cobalt (Co), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na), boron (B), strontium (Sr), barium (Ba), manganese (Mn), nickel (Ni), vanadium (V), iron (Fe), copper (Cu), phosphorus (P), scandium (Sc), zirconium (Zr), niobium (Nb), chromium (Cr), and/or molybdenum (Mo), the core has a concentration gradient where an atom % concentration of a silicon (Si) element decreases to the center of the core, and an atom % concentration of an oxygen (O) element increases to the center, and a depth from the surface contacting the coating layer where a concentration of the silicon (Si) element is about 55 atom % corresponds to about 2% to about 20% of a diameter of the core.
Type:
Grant
Filed:
March 13, 2013
Date of Patent:
July 21, 2015
Assignee:
Samsung SDI Co., Ltd.
Inventors:
Sang-Eun Park, Young-Ugk Kim, Young-Hwan Kim, Sang-Min Lee, Duck-Chul Hwang, Young-Jun Lee, Young-Min Kim, Tae-Geun Kim, Seung-Ho Na, Ung-Kuk Heo, Deuk-Hwa Lee