Abstract: Provided are a semiconductor photoresist composition including an organotin compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns using the same. The method of forming patterns may include forming an etching-objective layer on a substrate, coating the semiconductor photoresist composition on the etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

Abstract: A semiconductor memory device includes a memory cell array, a row decoder, a plurality of page buffers, and a voltage switching circuit. The memory cell array includes a plurality of memory cells. The row decoder is connected to the memory cell array through word lines. The plurality of page buffers are connected to the memory cell array through bit lines. The voltage switching circuit decodes an operation voltage and transmits the decoded operation voltage to the row decoder. The plurality of page buffers are formed in a first under cell region among first and second under cell regions, the first and second under cell regions being adjacent to each other in a first direction under the memory cell array. At least a portion of the voltage switching circuit is formed in an under slim region that is adjacent to the first under cell region and the second under cell region in a second direction.

Abstract: A method for screening a functional material according to the present invention comprises steps of: treating a linker material-coated substrate with a capture protein; treating the capture protein-treated substrate with a functional material candidate; treating the functional material candidate-treated substrate with biotin-conjugated IgE; and treating the biotin-bound IgE-treated substrate with fluorescently labeled streptavidin.

Abstract: A display device comprises a display area comprising a plurality of pixels, and a data line and a gate line electrically connected to the plurality of pixels, a non-display area disposed adjacent to the display area, a plurality of pads disposed on a side of the non-display area, a gate control line electrically connected to at least one of the plurality of pads and that supplies a gate control signal, a driving voltage line electrically connected to at least one of the plurality of pads and that supplies a driving voltage, an antistatic circuit electrically connected to the gate control line, a scan driver that generates a gate signal based on a gate control signal received from the gate control line and that supplies the gate signal to the gate line, and a shielding layer integral to the driving voltage line to overlap the top of the antistatic circuit.

Abstract: A display device includes a substrate, a plurality of pixel electrodes on the substrate and spaced apart from each other, a plurality of light-emitting elements on the plurality of pixel electrodes, respectively, and a common electrode layer on the plurality of light-emitting elements and to which a common voltage is applied. The plurality of light-emitting elements include a first light-emitting element that is configured to emit first light according to a first driving current and a second light-emitting element that is configured to emit second light according to a second driving current. An active layer of the first light-emitting element is the same as an active layer of the second light-emitting element.

Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.

Abstract: A memory controller comprising a DMA master device configured to provide a first data group to a non-volatile memory (NVM) device, a program buffer memory configured to temporarily store the first data group before the DMA master device provides the first data group to the NVM device, an exclusive OR computing circuit configured to perform an exclusive OR computation and an accumulation on a plurality of data included in the first data group provided from the program buffer memory to generate a first recovery data, after the DMA master device provides the first data group to the NVM device, and a buffer slave device including a first program recovery buffer memory configured to store the first recovery data and provide the first recovery data from the first program recovery buffer memory to the program buffer memory, in response to a program failure signal, may be provided.

Abstract: Disclosed is an anodeless all-solid-state battery which may effectively control local volume expansion due to lithium deposited during charging of the battery. The all-solid-state battery includes an anode current collector, an intermediate layer located on the anode current collector, a solid electrolyte layer located on the intermediate layer, a cathode active material layer located on the solid electrolyte layer and including a cathode active material, and a cathode current collector located on the cathode active material layer. The intermediate layer includes carbon particles and metal particles alloyable with lithium, and the carbon particles include a first carbon material, e.g., as a spherical carbon material, and a second carbon material, e.g., a linear carbon material.

Abstract: The present disclosure relates to a polycarbonate resin composition including 8 to 25% by weight of a polycarbonate (A) having a melt index (300° C., 1.2 kg) of 5 to 15 g/10 min; 45 to 77% by weight of a polycarbonate (B) having a melt index (300° C., 1.2 kg) of greater than 15 g/10 min and 25 g/10 min or less; 8 to 25% by weight of a polysiloxane-polycarbonate copolymer (C); 4.5 to 9% by weight of a room-temperature liquid phosphorus-based flame retardant (D); and 1.5 to 5.5% by weight of a phosphazene compound (E), a method of preparing the polycarbonate resin composition, and a molded article including the polycarbonate resin composition.

Abstract: A solenoid valve having an explosion-proof structure, a fuel feeding system, and a method of manufacturing the solenoid valve having an explosion-proof structure are provided. The solenoid valve having an explosion-proof structure includes: a body including a channel through which a fluid flows; a housing connected to the body and having one surface opened; a solenoid assembly arranged inside the housing and electrically connected to a controller; an armature, at least a portion of which is arranged in the channel and which opens or closes the channel by moving relative to the solenoid assembly by a magnetic field generated by the solenoid assembly; and a cover plate arranged on the one surface of the housing to face the armature.

Abstract: A battery pack structure includes: a battery cell unit which is provided with a plurality of battery cells and configured to transmit power to a vehicle, a temperature sensor unit which measures a temperature of the battery cell unit, a heating unit which is installed apart in the battery cell unit and configured to transmit heat to the battery cell unit, and a control unit which is connected to the temperature sensor unit and the heating unit, and receives a temperature signal from the temperature sensor unit to control operations of the heating unit.

Abstract: A solenoid valve having an explosion-proof structure, a fuel feeding system, and a method of manufacturing the solenoid valve having an explosion-proof structure are provided. The solenoid valve having an explosion-proof structure includes: a body including a channel through which a fluid flows; a housing connected to the body and having one surface opened; a solenoid assembly arranged inside the housing and electrically connected to a controller; an armature, at least a portion of which is arranged in the channel and which opens or closes the channel by moving relative to the solenoid assembly by a magnetic field generated by the solenoid assembly; and a cover plate arranged on the one surface of the housing to face the armature.

Abstract: A method of recovering a vehicle panel using a shape memory polymer, may include: applying an impact load to a panel of a shape memory polymer material at a temperature equal to or lower than a glass transition temperature; removing the impact load from the panel; providing a high-temperature environment at the glass transition temperature or greater than the glass transition temperature to the panel; and cooling the panel to room temperature.

Abstract: A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.