Abstract: A method for forming a semiconductor die, includes forming an interlayer dielectric layer on a substrate having a semiconductor die region, a seal-ring region, and a scribe line region, forming a metal pad and a test pad on the interlayer dielectric layer, forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad, first etching the passivation dielectric layer and the interlayer dielectric layer existing between the seal-ring region and the scribe line region to a predetermined depth using a plasma etching process, second etching the passivation dielectric layer to expose the metal pad and the test pad, forming a bump on the metal pad, and dicing the substrate while removing the scribe line region by mechanical sawing.

Abstract: A metalized plastic film for a rolled film capacitor or a laminated film capacitor and a film capacitor are disclosed. The metalized plastic film having a plastic film and an electrode metal deposited on the plastic film and patterned for a film capacitor includes rectangular split electrodes extending from a margin region defined at one side of the plastic film as a region free of the deposited electrode metal toward an opposite side of the plastic film, to have a length corresponding to about one fourth to four fifth of a width of the plastic film, the split electrodes being continuously arranged at specified intervals in a longitudinal direction of the plastic film, fuse portions each formed in an associated one of the split electrodes between the margin region and an electrode metal contacting region of the associated split electrode.