Abstract: One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.

Abstract: The present invention introduces a plasma etching method and apparatus. The plasma etching method may include forming a photoresist pattern on a target etching layer, hardening the surface of the photoresist pattern by exposing to a first plasma generated from a first discharge gas containing a reforming gas including carbon (C) and sulfur (S) and sequentially annealing, and etching the target etching layer with a second plasma generated from a second discharge gas using the surface-hardened photoresist pattern as a mask.

Abstract: An etching processing apparatus and an etching processing method using a liquid fluorocarbon or a liquid hydrofluorocarbon precursor are proposed, the etching processing apparatus and etching processing method capable of achieving almost the same effect as cryogenic etching even at a relatively high temperature compared to cryogenic etching. In addition, an etching processing apparatus and an etching processing method capable of solving process problems that may arise due to a liquid precursor and a low temperature may be provided.

Abstract: An elastic material vibration test apparatus includes a lower support plate having an upper surface on which an elastic material to be tested is placed, an upper support plate disposed above the lower support plate to be spaced apart from the lower support plate, a pillar connecting the lower support plate and the upper support plate, a pressing rod configured to pass through the upper support plate and ascend and descend in a vertical direction, an air bearing installed on the upper support plate and supporting an outer surface of the pressing rod in a non-contact state, a pressing plate coupled to a lower end of the pressing rod to press an upper surface of the elastic material, and one or more weights coupled to the pressing rod above the air bearing.

Abstract: A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.

Abstract: A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device. The method includes a first step of forming a semiconductor structure in which a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer are sequentially stacked; and a second step of forming a mesa structure by removing a portion of each of the second conductive-type semiconductor layer and the active layer, wherein the second step includes: forming a mesa structure by etching a portion of each of the second conductive-type semiconductor layer and the active layer using a plasma etching process; and performing an atomic layer etching process on a surface of the mesa structure formed by the plasma etching process.

Abstract: An elastic material vibration test apparatus includes a lower support plate having an upper surface on which an elastic material to be tested is placed, an upper support plate disposed above the lower support plate to be spaced apart from the lower support plate, a pillar connecting the lower support plate and the upper support plate, a pressing rod configured to pass through the upper support plate and ascend and descend in a vertical direction, an air bearing installed on the upper support plate and supporting an outer surface of the pressing rod in a non-contact state, a pressing plate coupled to a lower end of the pressing rod to press an upper surface of the elastic material, and one or more weights coupled to the pressing rod above the air bearing.

Abstract: A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed the first divided electrode and the second divided electrode.

Abstract: An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.

Abstract: A user terminal device is provided. The user terminal device includes a display, a first sensor provided on a front surface of the user terminal device and configured to detect a front illumination, a second sensor provided on a rear surface of the user terminal device and configured to detect a rear illumination, and a controller configured to adjust a luminance of the display based on the front illumination detected by the first sensor and the rear illumination detected by the second sensor.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: Disclosed is an inductively-coupled plasma-generating device including: a first power supply for supplying high frequency power; a second power supply for supplying low frequency power; a single coil-based plasma source including at least two antennas which comprise a first antenna having one end as a grounded end and the other end, wherein the first power supply is connected to the first antenna at a point thereof adjacent to the grounded end to receive the high frequency power; and a second antenna surrounded by the first antenna, wherein the second antenna has one end connected to the first antenna and the other end as a low frequency power receiving end connected to the second power supply; and a gas supply for supplying a gas, wherein the gas is excited into plasma by the single coil-based plasma source.

Abstract: A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.

Abstract: A display device is disclosed. The present display device comprises: a display unit of which the color gamut range varies according to the size of a driving current; and a processor for analyzing, per frame unit, the color distribution of an image signal, and adjusting, per frame unit, the size of the driving current on the basis of the analyzed color distribution such that the display unit operates within the color gamut range.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: A user terminal device is provided. The user terminal device includes a display, a first sensor provided on a front surface of the user terminal device and configured to detect a front illumination, a second sensor provided on a rear surface of the user terminal device and configured to detect a rear illumination, and a controller configured to adjust a luminance of the display based on the front illumination detected by the first sensor and the rear illumination detected by the second sensor.

Abstract: A user terminal device is provided. The user terminal device includes a display, a first sensor provided on a front surface of the user terminal device and configured to detect a front illumination, a second sensor provided on a rear surface of the user terminal device and configured to detect a rear illumination, and a controller configured to adjust a luminance of the display based on the front illumination detected by the first sensor and the rear illumination detected by the second sensor.

Abstract: Disclosed is an inductively-coupled plasma-generating device including: a first power supply for supplying high frequency power; a second power supply for supplying low frequency power; a single coil-based plasma source including at least two antennas which comprise a first antenna having one end as a grounded end and the other end, wherein the first power supply is connected to the first antenna at a point thereof adjacent to the grounded end to receive the high frequency power; and a second antenna surrounded by the first antenna, wherein the second antenna has one end connected to the first antenna and the other end as a low frequency power receiving end connected to the second power supply; and a gas supply for supplying a gas, wherein the gas is excited into plasma by the single coil-based plasma source.