Abstract: The present invention relates to polyolefin that has high molecular weight, wide molecular weight distribution and high long chain branch content, and thus, has excellent environmental crack resistance and processibility. The polyolefin of the present invention has excellent processibility and stability, and thus, may be preferably used as a food container, a bottle cap, and the like.

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: A method of fabricating a flexible mold for forming a flat display panel, comprising: forming a plurality of protrusions on a flexible film, forming plated patterns between the protrusions on the flexible film, the plated patterns having an inverted shape corresponding to partitions that define one or more sub-pixel regions in the panel, and removing the protrusions to form a flexible material.

Abstract: A portable display device includes a display panel, a backlight assembly having a light source for supplying light to the liquid crystal display panel and having a mold frame with a periphery step platform. A bottom chassis is combined with the mold frame, the bottom chassis having a bent unit surrounding the periphery step platform.

Abstract: The present invention discloses a muffler for vehicle, being capable of augmenting engine's output power more than conventional tuning mufflers and more effectively eliminating exhaust noise. The muffler comprises: exhaust pressure control means connected to an exhaust manifold of an vehicle engine, for controlling pressure of the exhaust gas, the exhaust pressure control means comprising an exhaust pressure control plate, which is pivotally attached to a predetermined position of the exhaust pressure control part; and noise elimination means, which shapes generally a hollow pipe and is connected to the exhaust pressure control means part, the noise elimination means comprising a mesh pipe, through which the exhaust gas passes; a sound absorber enveloping the mesh pipe; and a casing enclosing the sound absorber, whose one end is connected to the exhaust pressure control means and the other end is connected to an outlet.

Abstract: Disclosed is a flash memory cell and method of manufacturing the same, and programming/erasing/reading method thereof. The flash memory cell comprises a first tunnel oxide film formed at a given region of a semiconductor substrate, a first floating gate formed on the first tunnel oxide film, a second tunnel oxide film formed over the semiconductor substrate and along one sidewall of the first floating gate, a second floating g ate isolated from the first floating gate while contacting the second tunnel oxide film, a dielectric film formed on the first floating gate and the second floating gate, a control gate formed on the dielectric film, a first junction region formed in the semiconductor substrate below one side of the second tunnel oxide film, and a second junction region formed in the semiconductor substrate below one side of the first tunnel oxide film. Therefore, the present invention can implement 2-bit cell or 3-bit cell of a high density using the existing process technology.