Abstract: A substrate for an organic light-emitting device (OLED) and a method of manufacturing the same, in which the light extraction efficiency and process efficiency of the OLED can be improved. The substrate for an OLED that includes a base substrate, a first metal oxide thin film coating one surface of the base substrate, the first metal oxide thin film having a first texture on a surface thereof, a second metal oxide thin film coating the other surface of the base substrate, and a third metal oxide thin film coating a surface of the second metal oxide thin film.

Abstract: A light extraction substrate for an organic light-emitting device (OLED) which can improve the brightness of a display or an illumination system to which an OLED is applied by improving light extraction efficiency and a method of manufacturing the same. The light extraction substrate for an OLED includes an oxide or nitride thin film formed on a substrate body. The oxide or nitride thin film includes a base layer formed on the substrate body, a first texture formed on the base layer, the first texture having a plurality of first protrusions which protrude continuously or discontinuously from the base layer, and a second texture having a plurality of second protrusions which protrude continuously or discontinuously from each outer surface of the first protrusions.

Abstract: A zinc oxide (ZnO)-based transparent conductive thin film for a photovoltaic cell and a manufacturing method thereof, in which the transparent conductive thin film has an excellent textured surface and can be mass-produced. The ZnO-based transparent conductive film is formed on a substrate, is doped with a dopant, and has a textured surface. The textured surface has a plurality of protrusions. The manufacturing method forms the zinc oxide-based transparent conductive film on a substrate by atmospheric pressure chemical vapor deposition (APCVD) involving organic precursor gas and oxidizer gas.

Abstract: There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10 MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

Abstract: A photovoltaic cell substrate and a photovoltaic cell including the same. The photovoltaic cell substrate includes a transparent substrate and a transparent conductive film formed over the transparent substrate. The transparent conductive film includes a zinc oxide thin film layer doped with a dopant, and both a (0002) growth plane and a (10 11) growth plane are present in the zinc oxide thin film layer according to X-Ray Diffraction (XRD) data.

Abstract: A photovoltaic cell substrate includes a transparent substrate and a zinc oxide thin film layer doped with a dopant. The zinc oxide thin film layer is formed over the transparent substrate. The zinc oxide thin film layer has a (0002) crystal plane and a (10 11) crystal plane which accounts for 3% or more of the (0002) crystal plane according to X-Ray Diffraction (XRD) data.

Abstract: A photovoltaic cell substrate and a method of manufacturing the same. The photovoltaic cell substrate includes a transparent substrate and a transparent conductive film. The transparent conductive film includes zinc oxide (ZnO) which is doped with a dopant and is formed over the transparent substrate. A surface charge activated layer is formed on a surface of the transparent conductive film by Rapid-Thermal-Annealing.

Abstract: There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11 20) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11 20) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11{overscore (2)}0) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11{overscore (2)}0) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.