Patents by Inventor Youngbin DO

Youngbin DO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THIN FILM TRANSISTOR INCLUDING CRYSTALLIZED SEMICONDUCTOR, DISPLAY DEVICE INCLUDING THE SAME, MANUFACTURING METHOD OF THE SAME, AND METHOD FOR CRYSTALLIZING SEMICONDUCTOR
    Publication number: 20230154929
    Abstract: A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.
    Type: Application
    Filed: January 20, 2023
    Publication date: May 18, 2023
    Inventors: Youngbin DO, Chae Yeon HWANG
  • Thin film transistor including crystallized semiconductor, display device including the same, manufacturing method of the same, and method for crystallizing semiconductor
    Patent number: 11587952
    Abstract: A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: February 21, 2023
    Assignee: ADRC. CO. KR
    Inventors: Youngbin Do, Chae Yeon Hwang
  • THIN FILM TRANSISTOR INCLUDING CRYSTALLIZED SEMICONDUCTOR, DISPLAY DEVICE INCLUDING THE SAME, MANUFACTURING METHOD OF THE SAME, AND METHOD FOR CRYSTALLIZING SEMICONDUCTOR
    Publication number: 20210272986
    Abstract: A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.
    Type: Application
    Filed: January 12, 2021
    Publication date: September 2, 2021
    Inventors: Youngbin DO, Chae Yeon HWANG