Abstract: Disclosed is a technique for switching from a master node to a secondary node in a communication system. A method of a first communication node may comprise: adding the first communication node as a primary secondary cell (PSCell) to a second communication node through dual connectivity (DC); generating a first user plane path for smart dynamic switching (SDS) and a first instance for supporting the first user plane path according to a request from the second communication node; transmitting information on the first user plane path and the first instance to a terminal; receiving user data based on the first user plane path from the terminal as the first instance; and transmitting the user data to a core network using the first user plane path.

Abstract: An infrared heat source module is configured to minimize problems such as wrinkles or cracks in electrodes even if the patterns of a coated part and an uncoated part of the electrodes present in a current collector vary. The module improves a drying efficiency of the coated part of the current collector. An electrode using the infrared heat source module is manufactured by a process.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.

Abstract: The present invention is for providing an I-line negative photoresist composition exhibiting better process margin than a conventional I-line negative photoresist, has the purpose of alleviating a problem in which the center of a contact hole pattern is dented during pattern formation, and relates to an I-line negative photoresist composition for reducing the height difference, between the center and the edge, formed by the denting of the center and for reducing line edge roughness (LER) during pattern formation in a semiconductor process, the composition comprising: a polymer resin; a compound represented by chemical formula 1; a crosslinking agent; a photoacid generator; an acid diffusion inhibitor; and a solvent.

Abstract: The present invention relates to a non-aqueous electrolyte solution additive capable of improving lifespan characteristics of a lithium secondary battery by forming a solid-electrolyte interphase that is stable even at a high temperature and has low resistance when applied to a non-aqueous electrolyte solution, and relates to a non-aqueous electrolyte solution additive including a sultone-based compound represented by Formula I, a non-aqueous electrolyte solution including the same, and a lithium secondary battery.

Abstract: The present invention provides a positive active material for a rechargeable lithium battery, the active material including a dopant and having a crystalline structure in which metal oxide layers (MO layers) including metals and oxygen and reversible lithium layers are repeatedly stacked, wherein in a lattice configured by oxygen atoms of the MO layers adjacent to each other, the dopant time of charge, thereby forming a lithium trap and/or lithium dumbbell structure.

Abstract: The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.

Abstract: An activation method for a lithium secondary battery, and a lithium secondary battery manufactured using the same are disclosed herein. In some embodiments, the method comprises charging a secondary battery, wherein the secondary battery includes a positive electrode having a sacrificial positive electrode material represented by Formula 1 and having an orthorhombic structure, a negative electrode, a separator interposed between the positive electrode and the negative electrode, and an electrolyte solution, and then holding the secondary battery for a predetermined period of time at a voltage of 3.2 V or greater.

Abstract: The present invention provides a positive active material for a rechargeable lithium battery, the active material including a dopant and having a crystalline structure in which metal oxide layers (MO layers) including metals and oxygen and reversible lithium layers are repeatedly stacked, wherein in a lattice configured by oxygen atoms of the MO layers adjacent to each other, the dopant time of charge, thereby forming a lithium trap and/or lithium dumbbell structure.

Abstract: The present invention provides a positive active material for a rechargeable lithium battery, the active material including a dopant and having a crystalline structure in which metal oxide layers (MO layers) including metals and oxygen and reversible lithium layers are repeatedly stacked, wherein in a lattice configured by oxygen atoms of the MO layers adjacent to each other, the dopant time of charge, thereby forming a lithium trap and/or lithium dumbbell structure.

Abstract: Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.

Abstract: Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.

Abstract: The present invention provides a positive electrode active material for a secondary battery, the positive electrode active material including a lithium composite metal oxide particle represented by Formula 1 below, and a secondary battery including the same. LiaNi1?x?yCoxM1yM2zM3wO2??[Formula 1] In Formula 1, M1 is a metal element whose surface energy (?Esurf) calculated by Equation 1 below is ?0.5 eV or higher, M2 is a metal element whose surface energy (?Esurf) calculated by Equation 1 below is ?1.5 eV or higher and less than ?0.5 eV, M3 is a metal element whose surface energy (?Esurf) calculated by Equation 1 below is less than ?1.5 eV, and 1.0?a?1.5, 0<x?0.5, 0<z?0.05, 0.002?w?0.1, 0<x+y?0.7.

Abstract: This invention relates to an I-line negative photoresist composition having excellent etching resistance, which can exhibit superior etching resistance compared to conventional I-line negative photoresists and is thus suitable for use in semiconductor processing.

Abstract: The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.

Abstract: Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.