Patents by Inventor Young Chul Chung

Young Chul Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sampled grating distributed feedback wavelength tunable semiconductor laser integrated with sampled grating distributed Bragg reflector
    Patent number: 7130325
    Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: October 31, 2006
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Su Hwan Oh, Moon Ho Park, Ji Myon Lee, Ki Soo Kim, Chul Wook Lee, Hyun Sung Ko, Sahng Gi Park, Young Chul Chung, Su Hyun Kim
  • Sampled grating distributed feedback wavelength tunable semiconductor laser integrated with sampled grating distributed bragg reflector
    Publication number: 20040218639
    Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.
    Type: Application
    Filed: December 29, 2003
    Publication date: November 4, 2004
    Inventors: Su Hwan Oh, Moon Ho Park, Ji Myon Lee, Ki Soo Kim, Chul Wook Lee, Hyun Sung Ko, Sahng Gi Park, Young Chul Chung, Su Hyun Kim