Abstract: A light emitting element that includes a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first insulating film at least partially surrounding the first semiconductor layer, the second semiconductor layer, and the active layer; a second insulating film surrounding the first insulating film; and a third insulating film surrounding the second insulating film, wherein a bond dissociation energy of the second insulating film may be less than each of a bond dissociation energy of the first insulating film and a bond dissociation energy of the third insulating film.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A display device includes a first electrode and a second electrode which are spaced apart from each other on a substrate. A light emitting element is disposed between the first electrode and the second electrode. A light emitting element core of the light emitting element includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer. A first element insulating layer surrounds a side surface of the light emitting element core. The first element insulating layer is an oxide insulating layer having a single crystalline structure.

Abstract: A light emitting element may include a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer. An insulating film may surround an outer circumferential surface of the light emitting stack pattern. The insulating film may include a first layer, a second layer surrounding the first layer, and a third layer surrounding the second layer. The first layer and the third layer may include a same material.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A display device includes a light emitting element disposed on a substrate and including a first end portion and a second end portion. The first electrode is electrically connected to the first end portion of the light emitting element. The second electrode is electrically connected to the second end portion of the light emitting element. A first semiconductor layer, a light emitting layer, a second semiconductor layer, and an electrode layer of the light emitting element are sequentially disposed along a longitudinal direction from the second end portion to the first end portion. An insulating film of the light emitting element covers side surfaces of the first semiconductor layer, the light emitting layer, the second semiconductor layer, and the electrode layer, and extends in parallel to the longitudinal direction. A shielding layer is disposed inside the insulating film.

Abstract: A display device includes a light emitting element layer including a first light emitting element on a first pixel electrode of the first substrate, a first dummy element layer spaced apart from the first light emitting element, the first dummy element layer and the first light emitting element including a same material, a second light emitting element on the first dummy element layer and on a second pixel electrode of the first substrate, a first metal pattern on the first pixel electrode and electrically connected to the first pixel electrode and the first light emitting element, a second metal pattern on the second pixel electrode and electrically connected to the second pixel electrode and the second light emitting element, and a common electrode on the first light emitting element and the second light emitting element. The second metal pattern is in a through hole penetrating the first dummy element layer.

Abstract: A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.

Abstract: A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

Abstract: A light emitting element may include: a light emitting element core including a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer; and a single crystal insulating layer around a side surface of the light emitting element core.

Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.

Abstract: A light-emitting element includes: a first semiconductor layer including a first type semiconductor; a second semiconductor layer including a second type semiconductor different from the first type semiconductor; an active layer between one surface of the first semiconductor layer and one surface of the second semiconductor layer; a first electrode layer on another surface of the second semiconductor layer and having a first cross-sectional area; and a second electrode layer on another surface of the first semiconductor layer and having a second cross-sectional area smaller than the first cross-sectional area. A side surface of the light-emitting element defined by the first semiconductor layer, the active layer, the second semiconductor layer, and the second electrode layer is perpendicular to a main surface of the first electrode layer.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.

Abstract: The present invention relates to an agent for controlling Bcl-2 expression comprising ginsenoside F1 (20-O-?-D-glucopyranosyl-20(S)-protopanaxatriol) represented by the following formula 1 as an active component.

Abstract: There are provided a promoter containing ginsenoside compound K for the production of hyaluronic acid, and more particularly, a new efficacy of 20-O-?-D-glucopyranosyl-20(S)-protopanaxadiol (compound K), a chief metabolite of ginseng saponin, to increase the expression of hyaluronic acid synthase gene in human cell and thereby to promote the production of hyaluronic acid, and an anti-aging agent containing the promoter for the production of hyaluronic acid as an effective ingredient.

Abstract: There are provided a promoter containing ginsenoside compound K for the production of hyaluronic acid, and more particularly, a new efficacy of 20-O-?-D-glucopyranosyl-20(S)-protopanaxadiol (compound K), a chief metabolite of ginseng saponin, to increase the expression of hyaluronic acid synthase gene in human cell and thereby to promote the production of hyaluronic acid, and an anti-aging agent containing the promoter for the production of hyaluronic acid as an effective ingredient.

Abstract: The present invention relates to an agent for controlling Bcl-2 expression comprising ginsenoside F1 (20-O-?-D-glucopyranosyl-20(S)-protopanaxatriol) represented by the following formula 1 as an active component.

Abstract: Disclosed herein is a composition for preventing or treating pruritic or irritant skin diseases which comprises, as a vanilloid receptor antagonist, a thiourea derivative, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solvate thereof, together with a pharmaceutically acceptable carrier.

Abstract: The present invention relates to a composition containing genistein that accelerates the expression of the Carnitine Palmitoyl Transferase-1 (CPT-1) for improving or treating obesity. More particularly, the composition of the present invention comprises genistein that accelerates the expression of the CPT-1, an important enzyme for the lipolysis of fatty acid, and comprises carnitine that transports fatty acid into mitochondria and accelerates oxidation of fat in the oxidation process of fatty acid.