Abstract: A semiconductor package including a semiconductor chip having an active surface and a non-active surface opposite to the active surface, a ground member disposed on the active surface of the semiconductor chip, and an electromagnetic shielding member passing through the semiconductor chip, electrically connected to the ground member, and covering at least some regions of the non-active surface of the semiconductor chip may be provided.

Abstract: A semiconductor package including a semiconductor chip having an active surface and a non-active surface opposite to the active surface, a ground member disposed on the active surface of the semiconductor chip, and an electromagnetic shielding member passing through the semiconductor chip, electrically connected to the ground member, and covering at least some regions of the non-active surface of the semiconductor chip may be provided.

Abstract: A method for manufacturing a semiconductor device may comprise preparing a wafer having a front surface and a back surface. The wafer may have a plurality of semiconductor chips and scribe lines between the adjacent semiconductor chips. The wafer may be sawn along the scribe lines to form grooves between the adjacent semiconductor chips. A liquid protection material may be screen printed or spin-coated to form a protection layer on the back surface and within the grooves. The protection layer within the grooves may be more narrowly cut to form individual semiconductor devices and to leave a protection layer remaining thereon.

Abstract: A lead frame and a semiconductor chip package including a side ring pad are disclosed. In the present invention, According to the present invention, a lead frame is provided with a die pad on which a semiconductor chip is mounted. A plurality of inner leads is electrically interconnected to corresponding electrode pads by a plurality of bonding wires. A side ring pad is disposed around the die pad and between the die pad and the inner leads. A tie bar connects the die pad and the side ring pad. The electrode pads include power electrode pads that are electrically interconnected to the side ring pad by power bonding wires. The bonding wires may include first link bonding wires connected between the electrode pads and the metal pads and second link boding wires connected between the metal pads and the inner leads.