Patents by Inventor Young Duk Yoon

Young Duk Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity
    Patent number: 7031362
    Abstract: An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP cladding layer, p-InGaAsP contact layer and a p-side electrode are laminated sequentially on an n-InP substrate. Moreover, a film having high reflectivity is laminated on a reflection side end surface, and a transmission film is laminated on an emission side end surface. The transmission film has a first film and a second film. The second film is composed of an equivalent film composed of three layers.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: April 18, 2006
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Young Duk Yoon, Sakiko Sugihara, Naoki Tsukiji
  • Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity
    Publication number: 20030108076
    Abstract: An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP cladding layer, p-InGaAsP contact layer and a p-side electrode are laminated sequentially on an n-InP substrate. Moreover, a film having high reflectivity is laminated on a reflection side end surface, and a transmission film is laminated on an emission side end surface. The transmission film has a first film and a second film. The second film is composed of an equivalent film composed of three layers.
    Type: Application
    Filed: October 31, 2002
    Publication date: June 12, 2003
    Inventors: Young Duk Yoon, Sakiko Sugihara, Naoki Tsukiji
  • Semiconductor laser device, semiconductor laser module, and raman amplifier using the device or module
    Publication number: 20020176466
    Abstract: In a semiconductor laser device, a transmission film having a low reflectivity is provided on a laser beam radiation end surface side of a laser element having an active layer therein, and a dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm is provided on a laser beam reflection end surface side as a laser beam reflection film. As a result, the laser beam oscillated from the laser element is wavelength-selected by the laser beam reflection film and is emitted from the transmission film.
    Type: Application
    Filed: April 3, 2002
    Publication date: November 28, 2002
    Inventor: Young Duk Yoon