Abstract: A conductive composite material, a method of preparing the same, and a secondary battery including the same. The conductive composite material may increase the proportion of an active material when forming an electrode by chemically bonding a conductive material and a binder to each other. A method of preparing the conductive composite material comprises ionizing carbon-based particles in a predetermined polarity, ionizing PTFE particles in a polarity different from that of the carbon-based particles, and chemically bonding the ionized carbon-based particles and the ionized PTFE particles, which are ionized in different polarities, to each other.

Abstract: Disclosed is an exoskeleton-type rehabilitation robot system, including: a body part provided on a chair in which a user sits and provided with a robot arm capable of moving left or right based on the user seated on the chair; a conversion part configured to convert a position of the robot arm with respect to the body part; a driving part configured to articulate the robot arm with respect to the body part; and a controller configured to detect a change in a position of the robot arm and control a left or right driving mode of the driving part according to the position of the robot arm. In accordance with such a configuration, the exoskeleton-type rehabilitation robot system of the present invention is provided integrally with a chair, thereby having excellent space utilization. In addition, the user's initial preparation for rehabilitation training is simple, which can improve efficiency.

Abstract: A method of manufacturing a laser irradiation device for oral treatment includes (a) molding a base frame having a tongue fixing frame part convexly formed upward so that the tongue is inserted into a lower space thereof and a teeth seating part concavely formed so that human teeth are seated therein, (b) assembling an LED strip with respect to the base frame, the LED strip having a plurality of laser diodes installed on a flexible circuit board to correspond to the shape of the base frame, (c) injecting a liquid light-transparent resin material into an upper light-transparent cover and a lower light-transparent cover respectively corresponding to the shapes of upper and lower parts of the base frame, and (d) respectively pressing the upper light-transparent cover and the lower light-transparent cover vertically upward and downward with respect to the base frame.

Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Abstract: A method for reinjecting an electrolyte, and a secondary battery capable of being reinjected with an electrolyte are described. The method for reinjecting an electrolyte is a method for reinjecting an electrolyte into a secondary battery in which an electrode assembly and an electrolyte are accommodated in a pouch. The pouch includes an aluminum sheet, in which a functional hole is formed, and a polymer layer stacked on the aluminum sheet. The method includes a reinjection process of injecting an additional electrolyte into the pouch through the functional hole by opening the functional hole, and a sealing process of sealing the functional hole after the reinjection process.

Abstract: A battery management system according to the present disclosure includes a swelling detector including at least one sensor configured to detect a swelling status of a battery cell; and a control circuit configured to generate first time-series data of the swelling status repeatedly detected during a charging procedure included in a charge/discharge cycle of the battery cell. The control circuit is configured to determine a first change amount of the swelling status in the charging procedure from the first time-series data. The control circuit is configured to determine whether the battery cell is shorted internally based on the first change amount.

Abstract: According to an embodiment of the present disclosure, a memory device for a logic-in-memory may include a cell array including a plurality of ternary memory cells, a row decoder configured to select at least one ternary memory cell from among the plurality of ternary memory cells, and a page buffer configured to provide a first value to the at least one ternary memory cell and latch a third value obtained by performing a logic operation on the first value and a second value stored in the at least one ternary memory cell and/or the second value.

Abstract: A battery management system includes a displacement sensor configured to detect a displacement of a cell group including a plurality of battery cells connected in parallel, and a control unit. The control unit is configured to record the displacement of the cell group at a predetermined time interval for a first diagnosis period from a first time point to a second time point during charging of the cell group. The control unit is configured to determine a first displacement curve from a history of the displacement over the first diagnosis period. The control unit is configured to determine whether the plurality of battery cells is nonuniformly degraded based on the first displacement curve.

Abstract: In a memory device including a ternary memory cell, the ternary memory cell may include: a first inverter and a second inverter cross-coupled in a first node and a second node and including a pull-up device and a pull-down device configured to have a constant current pass therethrough upon turn-off; a first read transistor and a first write transistor which are connected to each other in parallel between the first node and a first bit line; and a second read transistor and a second write transistor which are connected to each other in parallel between the second node and a second bit line, wherein the first read transistor and the second read transistor may have a read access current, which is less than or equal to the constant current, pass therethrough in response to an activated read word line.

Abstract: A transistor device includes a substrate, a source region provided on the substrate, a drain region in the substrate, spaced apart from the source region in a direction parallel to a top surface of the substrate, a gate electrode provided on the substrate and between the source region and the drain region, a gate insulating film interposed between the gate electrode and the substrate, and a constant current generating layer extending between the source region and the drain region, in the direction parallel to the top surface of the substrate, wherein the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Abstract: A transistor device includes a substrate, a source region provided on the substrate, a drain region spaced apart from the source region in a direction parallel to a top surface of the substrate, a pair of constant current generating patterns provided in the substrate to be adjacent to the source region and the drain region, respectively, a gate electrode provided on the substrate and between the source region and the drain region, and a gate insulating film interposed between the gate electrode and the substrate, wherein, the pair of constant current generating patterns generate a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Abstract: According to an embodiment of the present disclosure, a memory device for a logic-in-memory may include a cell array including a plurality of ternary memory cells, a row decoder configured to select at least one ternary memory cell from among the plurality of ternary memory cells, and a page buffer configured to provide a first value to the at least one ternary memory cell and latch a third value obtained by performing a logic operation on the first value and a second value stored in the at least one ternary memory cell and/or the second value.

Abstract: A negative electrode including: a current collector; a first negative electrode active material layer positioned on at least one surface of the current collector for a negative electrode and containing a first carbonaceous active material; and a second negative electrode active material layer positioned on a surface of the first negative electrode active material layer and containing a silicon-based active material and carbon nanotubes. A lithium secondary battery including the negative electrode is also disclosed.

Abstract: An inspection apparatus for detecting a defect of a substrate is provided. The inspection apparatus includes a liquid crystal modulator, a light emitting unit, a beam splitter, and a measurement unit. The liquid crystal modulator includes a reflection layer, a liquid crystal layer, an electrode, and a polarizer. The reflection layer reflects a light. The sensor layer includes a hybrid aligned nematic liquid crystal. The electrode is provided on the liquid crystal layer. The polarizer is provided on the electrode.

Abstract: An inspection apparatus for detecting a defect of a substrate is provided. The inspection apparatus includes a liquid crystal modulator, a light emitting unit, a beam splitter, and a measurement unit. The liquid crystal modulator includes a reflection layer, a liquid crystal layer, an electrode, and a polarizer. The reflection layer reflects a light. The sensor layer includes a hybrid aligned nematic liquid crystal. The electrode is provided on the liquid crystal layer. The polarizer is provided on the electrode.

Abstract: A transparent resin for an encapsulation material, including a polymetallosiloxane obtained from at least one metal compound represented by Chemical Formulae 1A to 1D copolymerized with a silicon compound including a compound represented by Chemical Formula 2:

Abstract: A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,

Abstract: A transparent resin for an encapsulation material, including a polymetallosiloxane obtained from at least one metal compound represented by Chemical Formulae 1A to 1D copolymerized with a silicon compound including a compound represented by Chemical Formula 2:

Abstract: A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,