Abstract: A storage controller includes a host interface which real-time analyzes a command received from a host, a programmable logic unit which loads an optimal image adaptively selected from a plurality of images in response to at least one of a current operating state of the storage controller and the command, and a processor which performs an operation on a nonvolatile memory device using the programmable logic unit after the optimal image is loaded.

Abstract: A smart storage device is provided. The smart storage device includes a smart interface connected to a host device. An accelerator circuit is connected to the smart interface through a data bus conforming to a CXL.cache protocol and a CXL.mem protocol. The accelerator circuit is configured to perform acceleration computation in response to a computation command of the host device. A storage controller is connected to the smart interface through a data bus conforming to a CXL.io protocol. The storage controller is configured to control a data access operation for a storage device in response to a data access command of the host device. The accelerator circuit is directly accessible to the storage device through an internal bus connected directly to the storage controller.

Abstract: A storage controller includes a host interface which real-time analyzes a command received from a host, a programmable logic unit which loads an optimal image adaptively selected from a plurality of images in response to at least one of a current operating state of the storage controller and the command, and a processor which performs an operation on a nonvolatile memory device using the programmable logic unit after the optimal image is loaded.

Abstract: Provided are methods for operating a non-volatile memory controller. A method for operating a non-volatile memory controller includes dividing data provided from a host into first unit data and second unit data, encoding the first unit data into first codewords including n number of bits (n is an integer equal to or more than 1), encoding the second unit data into second codewords including n-w number of bits (w is an integer less than n and equal to or more than 1) corresponding to a bit having a value of 0 among the n number of bits of the first codewords, performing bit-to-state mapping on the first codewords and the second codewords using a predetermined bitmap, and programming the first codewords and the second codewords to a first page and a second page of a non-volatile memory, respectively.

Abstract: A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.

Abstract: Provided are a coding/decoding method for use in a multi-level memory system. The coding method includes searching for a set of symbols that may generate a forbidden pattern that is set initially from an input data stream, and sticking at least one bit included in the searched set of the symbols that may generate the forbidden pattern so as not to generate the forbidden pattern.

Abstract: Provided are methods for operating a non-volatile memory controller. A method for operating a non-volatile memory controller includes dividing data provided from a host into first unit data and second unit data, encoding the first unit data into first codewords including n number of bits (n is an integer equal to or more than 1), encoding the second unit data into second codewords including n-w number of bits (w is an integer less than n and equal to or more than 1) corresponding to a bit having a value of 0 among the n number of bits of the first codewords, performing bit-to-state mapping on the first codewords and the second codewords using a predetermined bitmap, and programming the first codewords and the second codewords to a first page and a second page of a non-volatile memory, respectively.

Abstract: A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.

Abstract: Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.

Abstract: Provided are a coding/decoding method for use in a multi-level memory system. The coding method includes searching for a set of symbols that may generate a forbidden pattern that is set initially from an input data stream, and sticking at least one bit included in the searched set of the symbols that may generate the forbidden pattern so as not to generate the forbidden pattern.

Abstract: Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.

Abstract: A method of a frequency-domain equalization to jointly suppress inter-symbol interference (ISI) and data-like co-channel interference (CCI) includes receiving a transmit signal over a channel, generating a vector by sampling and converting the transmit signal to a frequency domain signal; generating an equalized vector by multiplying an equalization matrix to the vector generated by converting; generating an estimate of data vector by inverse converting the equalized vector; and recovering data included in the transmit signal based on the estimate of data vector, wherein the equalization matrix is generated by approximating a frequency domain correlation matrix. Significant computational complexity is reduced than the LMMSE equalization while resulting in almost no performance degradation compared to the LMMSE equalization.

Abstract: A method of a frequency-domain equalization to jointly suppress inter-symbol interference (ISI) and data-like co-channel interference (CCI) includes receiving a transmit signal over a channel, generating a vector by sampling and converting the transmit signal to a frequency domain signal; generating an equalized vector by multiplying an equalization matrix to the vector generated by converting; generating an estimate of data vector by inverse converting the equalized vector; and recovering data included in the transmit signal based on the estimate of data vector, wherein the equalization matrix is generated by approximating a frequency domain correlation matrix. Significant computational complexity is reduced than the LMMSE equalization while resulting in almost no performance degradation compared to the LMMSE equalization.