Abstract: Proposed are a substrate processing apparatus and a substrate processing method capable of efficiently preventing contamination of a substrate and a processing space caused by a reverse flow of purge gas.

Abstract: An optical module for surface inspection includes a first light source unit that illuminates a substrate with first light produced by a first light source and a first beam splitter that changes the path of the first light, a second light source unit that illuminates the substrate with second light polarized in a first direction, a direction of polarization changing unit that illuminates the substrate with the third light polarized in a second direction perpendicular to the first direction, and a detection unit that detects fourth light which is a product of the first light reflecting from the substrate, fifth light which is a product of the second light scattered from the substrate, and sixth light which is a product of the third light scattered from the substrate. The third light is produced by changing the direction of polarization of the second light reflected from the inspected substrate.

Abstract: An optical module for surface inspection includes a first light source unit that illuminates a substrate with first light produced by a first light source and a first beam splitter that changes the path of the first light, a second light source unit that illuminates the substrate with second light polarized in a first direction, a direction of polarization changing unit that illuminates the substrate with the third light polarized in a second direction perpendicular to the first direction, and a detection unit that detects fourth light which is a product of the first light reflecting from the substrate, fifth light which is a product of the second light scattered from the substrate, and sixth light which is a product of the third light scattered from the substrate. The third light is produced by changing the direction of polarization of the second light reflected from the inspected substrate.

Abstract: A method for fabricating a semiconductor device is provided, which includes forming a screen layer on a substrate, the screen layer including a first portion doped with a first type impurity, forming a first undoped semiconductor layer on the screen layer, forming a gate structure on the first semiconductor layer, forming a first amorphous region on both sides of the gate structure in the first semiconductor layer, and re-crystallizing the first amorphous region through performing a first heat treatment of the first amorphous region.

Abstract: A method for fabricating a semiconductor device is provided, which includes forming a screen layer on a substrate, the screen layer including a first portion doped with a first type impurity, forming a first undoped semiconductor layer on the screen layer, forming a gate structure on the first semiconductor layer, forming a first amorphous region on both sides of the gate structure in the first semiconductor layer, and re-crystallizing the first amorphous region through performing a first heat treatment of the first amorphous region.