Abstract: Discussed is a display device including a light emitting element module on a substrate, wherein the light emitting element module includes a plurality of semiconductor light emitting elements disposed on the substrate, a plurality of individual electrode portions electrically connected to each of the plurality of semiconductor light emitting elements and a common electrode portion electrically connected to each of the plurality of semiconductor light emitting elements, and wherein each of the individual electrode portions is disposed on different sides of the light emitting element module.

Abstract: The present specification provides a red semiconductor light emitting element having no residual bonding layer when a semiconductor light emitting element is selectively transferred or assembled, and a method for manufacturing a display apparatus using same.

Abstract: Discussed is a display device including a light emitting element module on a substrate, wherein the light emitting element module includes a plurality of semiconductor light emitting elements disposed on the substrate, a plurality of individual electrode portions electrically connected to each of the plurality of semiconductor light emitting elements and a common electrode portion electrically connected to each of the plurality of semiconductor light emitting elements, and wherein each of the individual electrode portions is disposed on different sides of the light emitting element module.

Abstract: The present invention relates to a display device and, more particularly, to a display device using a semiconductor light emitting element.

Abstract: A display device is discussed. The Display device includes a plurality of semiconductor light-emitting elements on a substrate, wherein the substrate includes: a base substrate; an insulating layer on the base substrate; and pads protruding farther than the insulating layer and enabling the semiconductor light-emitting elements to in contact, wherein the insulating layer includes inorganic particles, and at least a portion of some of the inorganic particles is formed so as to protrude from a surface of the insulating layer.

Abstract: Discussed is a display device having a plurality of semiconductor light-emitting diodes. At least one of the semiconductor light-emitting diodes has a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, and the second conductive electrode being disposed on the second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an undoped semiconductor layer disposed on the second conductive semiconductor layer; and protrusions formed of a porous material allowing electropolishing, and on the undoped semiconductor layer.

Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion.

Abstract: The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.

Abstract: The present invention relates to a display device, and particularly, to a display device using a semiconductor light emitting device. The display device includes a substrate including an electrode, a plurality of light emitting devices assembled on the substrate, and a color conversion part stacked on the plurality of semiconductor light emitting devices and converting a color. Specifically, the color conversion part includes: a porous layer, a wavelength conversion layer, and a reflective layer, wherein the wavelength conversion layer is disposed between the porous layer and the reflective layer, and the porous layer is formed of an electro-polishable porous terminal. A surface of the reflective layer includes a first region and a second region surrounded by the first region, the second region has roughness higher than that of the first region, and a plurality of first protrusions are disposed in the second region.

Abstract: The present invention relates to a display device and, more particularly, to a display device using a semiconductor light emitting element.

Abstract: A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.

Abstract: A method of transferring a semiconductor light emitting device, and which includes positioning a transfer head having a head electrode facing a semiconductor light emitting device having an undoped semiconductor layer, the semiconductor light emitting device arranged on a carrier substrate; moving the head electrode of the transfer head close to the undoped semiconductor layer of the semiconductor light emitting device; applying a voltage to the head electrode to provide an attachment force to the undoped semiconductor layer by an electrostatic force; and picking-up the semiconductor light emitting device and transferring the semiconductor light emitting device to base substrate.

Abstract: The present invention relates to a display device, and particularly, to a display device using a semiconductor light emitting device. The display device includes a substrate including an electrode, a plurality of light emitting devices assembled on the substrate, and a color conversion part stacked on the plurality of semiconductor light emitting devices and converting a color. Specifically, the color conversion part includes: a porous layer, a wavelength conversion layer, and a reflective layer, wherein the wavelength conversion layer is disposed between the porous layer and the reflective layer, and the porous layer is formed of an electro-polishable porous terminal. A surface of the reflective layer includes a first region and a second region surrounded by the first region, the second region has roughness higher than that of the first region, and a plurality of first protrusions are disposed in the second region.

Abstract: A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.

Abstract: The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.

Abstract: A display device including a substrate; a sub-pixel portion disposed on the substrate; and a wiring electrode electrically connected to the sub-pixel portion. Further, the sub-pixel portion includes a first light emitting portion and a second light emitting portion configured to output light of a same color and spaced apart with a groove therebetween, and the wiring electrode includes a base electrode configured to transmit a same electric signal to the first light emitting portion and the second light emitting portion, a first sub-electrode extended from the base electrode and electrically connected to the first light emitting portion, and a second sub-electrode extended from the base electrode and electrically connected to the second light emitting portion.

Abstract: A method of transferring a semiconductor light emitting device, and which includes positioning a transfer head having a head electrode facing a semiconductor light emitting device having an undoped semiconductor layer, the semiconductor light emitting device arranged on a carrier substrate; moving the head electrode of the transfer head close to the undoped semiconductor layer of the semiconductor light emitting device; applying a voltage to the head electrode to provide an attachment force to the undoped semiconductor layer by an electrostatic force; and picking-up the semiconductor light emitting device and transferring the semiconductor light emitting device to base substrate.

Abstract: Disclosed are a non-polar nitride-based light emitting device and a method for fabricating the same. The non-polar nitride-based light emitting device includes a substrate, a first-type semiconductor layer on the substrate, an active layer on the active layer, a second-type semiconductor layer on the active layer, a light extraction layer on the second-type semiconductor layer and including at least one layer including indium having a plurality of unit structures having an inverted pyramidal intaglio shape, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer.

Abstract: Disclosed are a non-polar hetero substrate, a method for manufacturing the same, and a nitride-based light emitting device using the same. The non-polar hetero substrate includes a non-polar base substrate, a nitride base layer disposed on the substrate, a defect reduction layer disposed on the nitride base layer, the defect reduction layer including a plurality of air gaps, and a nitride semiconductor layer disposed on the defect reduction layer.

Abstract: Disclosed are a non-polar hetero substrate, a method for manufacturing the same, and a nitride-based light emitting device using the same. The non-polar hetero substrate includes a non-polar base substrate, a nitride base layer disposed on the substrate, a defect reduction layer disposed on the nitride base layer, the defect reduction layer including a plurality of air gaps, and a nitride semiconductor layer disposed on the defect reduction layer.