Abstract: A heat radiation device includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A second electrode is disposed on the semiconductor substrate and is spaced apart from the first electrode. A first through electrode is disposed in the semiconductor substrate. The first through electrode is electrically connected to the first electrode.

Abstract: A heat radiation device includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A second electrode is disposed on the semiconductor substrate and is spaced apart from the first electrode. A first through electrode is disposed in the semiconductor substrate. The first through electrode is electrically connected to the first electrode.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.

Abstract: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.

Abstract: Disclosed are a thermoelectric device based on silicon nanowires including: a substrate; a silicon heat absorbing part absorbing heat, a silicon nanowire leg transferring heat, and a silicon heat releasing part releasing heat, which are formed on the substrate; and an insulating film with at least one or more holes, which is formed on the substrate including the silicon heat absorbing part, the silicon nanowire leg, and the silicon heat releasing part, and a method for manufacturing the same.

Abstract: Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.

Abstract: A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.

Abstract: Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.

Abstract: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.