Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: An array substrate for a display device, including a substrate having a pixel region and a switching region, a source electrode and a drain electrode on the switching region of the substrate, ends of the source and drain electrodes having tapered edges, a pixel electrode in the pixel region of the substrate, the pixel electrode being connected to the drain electrode, an organic semiconductor layer on the source and drain electrodes, the organic semiconductor layer completely contacting tapered edges and a top surface of each of the source and drain electrodes, a first insulating layer on the organic semiconductor layer, and a gate electrode on the first insulating layer.

Abstract: An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the s

Abstract: An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the s

Abstract: A display device using quantum dots includes a first substrate and a second substrate disposed to face each other, a partition wall formed between the first and second substrates and defining a unit pixel, a first electrode formed on the first substrate, a second electrode formed to correspond to the first electrode, a backlight unit formed under the first substrate and having a UV light source, a UV blocking film formed above the second substrate, and a red light emitting layer where red quantum dots are formed, a blue light emitting layer where blue quantum dots are formed, and a green light emitting layer where green quantum dots are formed, which are disposed in the unit pixel.

Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: A display device using quantum dots includes a first substrate and a second substrate disposed to face each other, a partition wall formed between the first and second substrates and defining a unit pixel, a first electrode formed on the first substrate, a second electrode formed to correspond to the first electrode, a backlight unit formed under the first substrate and having a UV light source, a UV blocking film formed above the second substrate, and a red light emitting layer where red quantum dots are formed, a blue light emitting layer where blue quantum dots are formed, and a green light emitting layer where green quantum dots are formed, which are disposed in the unit pixel.

Abstract: An array substrate for a display device, including a substrate having a pixel region and a switching region, a source electrode and a drain electrode on the switching region of the substrate, ends of the source and drain electrodes having tapered edges, a pixel electrode in the pixel region of the substrate, the pixel electrode being connected to the drain electrode, an organic semiconductor layer on the source and drain electrodes, the organic semiconductor layer completely contacting tapered edges and a top surface of each of the source and drain electrodes, a first insulating layer on the organic semiconductor layer, and a gate electrode on the first insulating layer.

Abstract: An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the s