Abstract: The present disclosure relates to humidity sensitive nano-photonics and a manufacturing method thereof, and more particularly to humidity sensitive nano-photonics including a metasurface and a method for manufacturing the same. The humidity sensitive nano-photonics and the manufacturing method thereof according to an embodiment of the present disclosure include a metasurface that are capable of expanding and contracting depending on changes in the relative humidity of the surrounding environment, and have the advantage of being easily manufactured, mass-produced at low cost, capable of effectively adjusting the phase and intensity of light, and applicable to various materials and various shapes of surfaces as well.

Abstract: According to an embodiment of the present invention, there is provided method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light comprising: a step in which a substrate is provided; a step in which a Plasma Enhanced Chemical Vapor Deposition (PECVD) which is used to insert H2 gas and SiH4 gas into a chamber is used to deposit a dielectric layer 200 onto the substrate, and gases inserted into the chamber further comprise N2 gas apart from the H2 gas and the SiH4 gas. Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light further comprising O2 gas apart from the H2 gas and the SiH4 gas. Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light further comprising Ar gas apart from the H2 gas and the SiH4 gas.

Abstract: Proposed is a substrate processing apparatus capable of replacing consumables and, more particularly, to a technique for supporting replacement of consumables such as a shower head and a focus ring while maintaining a chamber processing environment of the substrate processing apparatus.

Abstract: A plasma processing apparatus is provided. A plasma processing apparatus includes a chamber, in which a plasma process is performed, a chuck disposed inside the chamber and provided with a wafer, a gas feeder disposed on the chuck and for providing process gas to the inside of the chamber, an OES port extending in a vertical direction along a sidewall of the chamber, and for receiving each of a first light emitted from plasma at a first position and a second light emitted from plasma at a second position closer to the gas feeder than the first position, an OES sensor for sensing the first light to measure first plasma data, and sensing the second light to measure second plasma data, and a control unit for controlling the plasma process using the first and second plasma data.

Abstract: An apparatus for treating a substrate includes a chamber having a process space therein, a support unit that supports the substrate in the process space, a gas supply unit that supplies a process gas into the process space, and a plasma generation unit that generates plasma from the process gas. The support unit includes a support plate having the substrate placed thereon, a first ring that surrounds the substrate placed on the support plate, a second ring that is disposed under the first ring and that surrounds the support plate, and a gas supply member that supplies a gas above the first ring, and the gas supply member includes a gas line vertically formed through the first ring and the second ring.