Patents by Inventor Younghyun KO
Younghyun KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250063890Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate and including an active hole; and a gate electrode on the active layer. The active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length. The active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.Type: ApplicationFiled: August 8, 2024Publication date: February 20, 2025Applicant: LG Display Co., Ltd.Inventors: Younghyun KO, JuHeyuck BAECK, ChanYong JEONG
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Publication number: 20250048739Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.Type: ApplicationFiled: July 25, 2024Publication date: February 6, 2025Applicant: LG DISPLAY CO., LTD.Inventors: ChanYong JEONG, JuHeyuck BAECK, Dohyung LEE, Younghyun KO, HongRak CHOI, Dohyun KWAK
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Publication number: 20250040194Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.Type: ApplicationFiled: October 16, 2024Publication date: January 30, 2025Inventors: ChanYong Jeong, JuHeyuck Baeck, Dohyung Lee, Younghyun Ko
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Patent number: 12148841Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.Type: GrantFiled: June 7, 2021Date of Patent: November 19, 2024Assignee: LG Display Co., Ltd.Inventors: Chanyong Jeong, Juheyuck Baeck, Dohyung Lee, Younghyun Ko
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Publication number: 20240222518Abstract: Embodiments of the present disclosure relate to a display device, which in more detail includes a substrate, a first gate electrode on the substrate, a first gate insulating film on the first gate electrode, an oxide semiconductor layer on the first gate insulating film, a second gate insulating film on the oxide semiconductor layer, a second gate electrode on the second gate insulating film, a first interface layer between the first gate insulating film and the oxide semiconductor layer, and a second interface layer between the second gate insulating film and the oxide semiconductor layer, wherein the first interface layer and the second interface layer contain mutually-different amounts of oxygen, thereby being able to provide a transistor structure having high reliability.Type: ApplicationFiled: December 14, 2023Publication date: July 4, 2024Inventors: JuHeyuck BAECK, YoungHyun KO, DoHyung LEE, HongRak CHOI, ChanYong JEONG
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Publication number: 20240222512Abstract: Provided are a thin film transistor and a display device. The thin film transistor has a structure in which an active layer has an induced conductorized portion located between a main conductorized portion and a channel area, with the induced conductorized portion overlapping a portion of one side of a light shield layer. The possibility of damage to the active layer is removed or minimized. A short channel is easily realized.Type: ApplicationFiled: December 7, 2023Publication date: July 4, 2024Inventors: YoungHyun Ko, ChanYong Jeong, JuHeyuck Baeck, GaWon Yang
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Publication number: 20240215314Abstract: Disclosed is a thin film transistor substrate including a first thin film transistor having a first gate electrode, a first active layer, a first source electrode, and a first drain electrode, and a second thin film transistor having a second gate electrode, a second active layer with a pattern different from a pattern of the first active layer, a second source electrode, and a second drain electrode. The first active layer includes a first lower active layer overlapping the first gate electrode and a first upper active layer disposed on the first lower active layer and not overlapping the first gate electrode. The second active layer includes a second lower active layer overlapping the second gate electrode and a second upper active layer disposed on the second lower active layer and overlapping the second gate electrode. A display apparatus including the same thin film transistor substrate is also disclosed.Type: ApplicationFiled: August 30, 2023Publication date: June 27, 2024Inventors: Younghyun KO, ChanYong JEONG
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Publication number: 20240215341Abstract: Discussed are a display panel, a display device, and a method for manufacturing the display device, capable of preventing damage to an active layer and deterioration of an element. The display device can include an active layer having a channel area disposed between a first area and a second area, a first barrier layer disposed on a portion of an upper surface of the active layer, a first auxiliary electrode disposed on the first area on the first barrier, a second auxiliary electrode disposed on the second area on the first barrier layer, a first diffusion control layer disposed on the first and second auxiliary electrodes, an insulation layer disposed on the first diffusion control layer, and a first electrode electrically connected to the first auxiliary electrode and a second electrode electrically connected to the second auxiliary electrode, disposed on the insulation layer.Type: ApplicationFiled: October 5, 2023Publication date: June 27, 2024Applicant: LG DISPLAY CO., LTD.Inventors: Younghyun Ko, ChanYong Jeong
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Publication number: 20240188331Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.Type: ApplicationFiled: October 4, 2023Publication date: June 6, 2024Applicant: LG Display Co., Ltd.Inventors: HongRak CHOI, JuHeyuck BAECK, Dohyung LEE, Younghyun KO, ChanYong JEONG
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Publication number: 20240162239Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.Type: ApplicationFiled: October 18, 2023Publication date: May 16, 2024Applicant: LG Display Co., Ltd.Inventors: Dohyung LEE, ChanYong JEONG, JuHeyuck BAECK, Younghyun KO, HongRak CHOI
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Publication number: 20240090276Abstract: A display panel include a data signal line for supplying a data signal; a scan signal line for supplying a scan signal; and a subpixel connected to the data signal line and the scan signal line and including a first transistor including a first active layer, a first source electrode connected to one side of the first active layer, a first drain electrode connected to another side of the first active layer, and a first gate electrode overlapping with the first active layer, overlapping with all or at least a portion of the first source electrode, and overlapping with all or at least a portion of the first drain electrode, and are capable of preventing the exposure of the first transistor to light or hydrogen, and thereby preventing a decrease in characteristics of the first transistor due to light or hydrogen.Type: ApplicationFiled: August 21, 2023Publication date: March 14, 2024Applicant: LG Display Co., Ltd.Inventors: ChanYong JEONG, Younghyun KO, JuHeyuck BAECK
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Patent number: 11888065Abstract: Provided are a thin film transistor army substrate and an electronic device including the same. The thin film transistor army substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.Type: GrantFiled: October 27, 2022Date of Patent: January 30, 2024Assignee: LG Display Co., Ltd.Inventor: Younghyun Ko
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Publication number: 20230337482Abstract: An organic light emitting display device is disclosed that uses a hybrid type thin film transistor. The organic light emitting display device includes a conductive pattern with a higher etch resistance compared to an inorganic thin film in an upper edge of a semiconductor pattern, and is thereby capable of simplifying a manufacturing process of a substrate on which an array of hybrid type thin film transistors each including multiple layers is disposed, and improving the performance of thin film transistors formed on the array substrate. The organic light emitting display device can represent a variety of grayscale images at low grayscales as a driving thin film transistor including an oxide semiconductor pattern is designed to have an increased s-factor value.Type: ApplicationFiled: January 20, 2023Publication date: October 19, 2023Inventors: Min-Gu Kang, SeungChan Choi, Younghyun Ko, Uyhyun Choi, Jaeman Jang
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Publication number: 20230140193Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.Type: ApplicationFiled: October 31, 2022Publication date: May 4, 2023Inventors: Sungju CHOI, JungSeok SEO, Younghyun KO, Jaeyoon PARK, Seoyeon IM, Jinwon JUNG
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Publication number: 20230134901Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.Type: ApplicationFiled: October 19, 2022Publication date: May 4, 2023Inventors: Younghyun Ko, Jaeman Jang, SeungChan Choi, Min-Gu Kang, Sungju Choi
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Publication number: 20230127842Abstract: A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.Type: ApplicationFiled: October 21, 2022Publication date: April 27, 2023Applicant: LG Display Co., Ltd.Inventors: Min-Gu KANG, Younghyun KO, HongRak CHOI
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Patent number: 11636805Abstract: The present specification provides a display device and a driving method thereof performing sampling for sensing a sampling voltage of a driving transistor using a fast mode in which a driving transistor operates by a sampling voltage formed in one storage capacitor, and data writing using the slow mode in which the driving transistor is operated by a data voltage formed in another storage capacitor.Type: GrantFiled: September 8, 2021Date of Patent: April 25, 2023Assignee: LG Display Co., Ltd.Inventors: YongHo Jang, Younghyun Ko
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Publication number: 20230111218Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.Type: ApplicationFiled: October 10, 2022Publication date: April 13, 2023Inventors: Min-Gu KANG, Younghyun KO, SeungChan CHOI, Jaeman JANG
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Publication number: 20230061581Abstract: Provided are a thin film transistor army substrate and an electronic device including the same. The thin film transistor army substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.Type: ApplicationFiled: October 27, 2022Publication date: March 2, 2023Inventor: Younghyun KO
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Publication number: 20220399464Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from theType: ApplicationFiled: May 24, 2022Publication date: December 15, 2022Applicant: LG DISPLAY CO., LTD.Inventors: Younghyun KO, SeungChan CHOI, Min-Gu KANG, Jaeman JANG