Patents by Inventor Younghyun KO

Younghyun KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250063890
    Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate and including an active hole; and a gate electrode on the active layer. The active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length. The active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.
    Type: Application
    Filed: August 8, 2024
    Publication date: February 20, 2025
    Applicant: LG Display Co., Ltd.
    Inventors: Younghyun KO, JuHeyuck BAECK, ChanYong JEONG
  • Publication number: 20250048739
    Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.
    Type: Application
    Filed: July 25, 2024
    Publication date: February 6, 2025
    Applicant: LG DISPLAY CO., LTD.
    Inventors: ChanYong JEONG, JuHeyuck BAECK, Dohyung LEE, Younghyun KO, HongRak CHOI, Dohyun KWAK
  • Publication number: 20250040194
    Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.
    Type: Application
    Filed: October 16, 2024
    Publication date: January 30, 2025
    Inventors: ChanYong Jeong, JuHeyuck Baeck, Dohyung Lee, Younghyun Ko
  • Patent number: 12148841
    Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: November 19, 2024
    Assignee: LG Display Co., Ltd.
    Inventors: Chanyong Jeong, Juheyuck Baeck, Dohyung Lee, Younghyun Ko
  • Publication number: 20240222518
    Abstract: Embodiments of the present disclosure relate to a display device, which in more detail includes a substrate, a first gate electrode on the substrate, a first gate insulating film on the first gate electrode, an oxide semiconductor layer on the first gate insulating film, a second gate insulating film on the oxide semiconductor layer, a second gate electrode on the second gate insulating film, a first interface layer between the first gate insulating film and the oxide semiconductor layer, and a second interface layer between the second gate insulating film and the oxide semiconductor layer, wherein the first interface layer and the second interface layer contain mutually-different amounts of oxygen, thereby being able to provide a transistor structure having high reliability.
    Type: Application
    Filed: December 14, 2023
    Publication date: July 4, 2024
    Inventors: JuHeyuck BAECK, YoungHyun KO, DoHyung LEE, HongRak CHOI, ChanYong JEONG
  • Publication number: 20240222512
    Abstract: Provided are a thin film transistor and a display device. The thin film transistor has a structure in which an active layer has an induced conductorized portion located between a main conductorized portion and a channel area, with the induced conductorized portion overlapping a portion of one side of a light shield layer. The possibility of damage to the active layer is removed or minimized. A short channel is easily realized.
    Type: Application
    Filed: December 7, 2023
    Publication date: July 4, 2024
    Inventors: YoungHyun Ko, ChanYong Jeong, JuHeyuck Baeck, GaWon Yang
  • Publication number: 20240215314
    Abstract: Disclosed is a thin film transistor substrate including a first thin film transistor having a first gate electrode, a first active layer, a first source electrode, and a first drain electrode, and a second thin film transistor having a second gate electrode, a second active layer with a pattern different from a pattern of the first active layer, a second source electrode, and a second drain electrode. The first active layer includes a first lower active layer overlapping the first gate electrode and a first upper active layer disposed on the first lower active layer and not overlapping the first gate electrode. The second active layer includes a second lower active layer overlapping the second gate electrode and a second upper active layer disposed on the second lower active layer and overlapping the second gate electrode. A display apparatus including the same thin film transistor substrate is also disclosed.
    Type: Application
    Filed: August 30, 2023
    Publication date: June 27, 2024
    Inventors: Younghyun KO, ChanYong JEONG
  • Publication number: 20240215341
    Abstract: Discussed are a display panel, a display device, and a method for manufacturing the display device, capable of preventing damage to an active layer and deterioration of an element. The display device can include an active layer having a channel area disposed between a first area and a second area, a first barrier layer disposed on a portion of an upper surface of the active layer, a first auxiliary electrode disposed on the first area on the first barrier, a second auxiliary electrode disposed on the second area on the first barrier layer, a first diffusion control layer disposed on the first and second auxiliary electrodes, an insulation layer disposed on the first diffusion control layer, and a first electrode electrically connected to the first auxiliary electrode and a second electrode electrically connected to the second auxiliary electrode, disposed on the insulation layer.
    Type: Application
    Filed: October 5, 2023
    Publication date: June 27, 2024
    Applicant: LG DISPLAY CO., LTD.
    Inventors: Younghyun Ko, ChanYong Jeong
  • Publication number: 20240188331
    Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.
    Type: Application
    Filed: October 4, 2023
    Publication date: June 6, 2024
    Applicant: LG Display Co., Ltd.
    Inventors: HongRak CHOI, JuHeyuck BAECK, Dohyung LEE, Younghyun KO, ChanYong JEONG
  • Publication number: 20240162239
    Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.
    Type: Application
    Filed: October 18, 2023
    Publication date: May 16, 2024
    Applicant: LG Display Co., Ltd.
    Inventors: Dohyung LEE, ChanYong JEONG, JuHeyuck BAECK, Younghyun KO, HongRak CHOI
  • Publication number: 20240090276
    Abstract: A display panel include a data signal line for supplying a data signal; a scan signal line for supplying a scan signal; and a subpixel connected to the data signal line and the scan signal line and including a first transistor including a first active layer, a first source electrode connected to one side of the first active layer, a first drain electrode connected to another side of the first active layer, and a first gate electrode overlapping with the first active layer, overlapping with all or at least a portion of the first source electrode, and overlapping with all or at least a portion of the first drain electrode, and are capable of preventing the exposure of the first transistor to light or hydrogen, and thereby preventing a decrease in characteristics of the first transistor due to light or hydrogen.
    Type: Application
    Filed: August 21, 2023
    Publication date: March 14, 2024
    Applicant: LG Display Co., Ltd.
    Inventors: ChanYong JEONG, Younghyun KO, JuHeyuck BAECK
  • Patent number: 11888065
    Abstract: Provided are a thin film transistor army substrate and an electronic device including the same. The thin film transistor army substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.
    Type: Grant
    Filed: October 27, 2022
    Date of Patent: January 30, 2024
    Assignee: LG Display Co., Ltd.
    Inventor: Younghyun Ko
  • Publication number: 20230337482
    Abstract: An organic light emitting display device is disclosed that uses a hybrid type thin film transistor. The organic light emitting display device includes a conductive pattern with a higher etch resistance compared to an inorganic thin film in an upper edge of a semiconductor pattern, and is thereby capable of simplifying a manufacturing process of a substrate on which an array of hybrid type thin film transistors each including multiple layers is disposed, and improving the performance of thin film transistors formed on the array substrate. The organic light emitting display device can represent a variety of grayscale images at low grayscales as a driving thin film transistor including an oxide semiconductor pattern is designed to have an increased s-factor value.
    Type: Application
    Filed: January 20, 2023
    Publication date: October 19, 2023
    Inventors: Min-Gu Kang, SeungChan Choi, Younghyun Ko, Uyhyun Choi, Jaeman Jang
  • Publication number: 20230140193
    Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.
    Type: Application
    Filed: October 31, 2022
    Publication date: May 4, 2023
    Inventors: Sungju CHOI, JungSeok SEO, Younghyun KO, Jaeyoon PARK, Seoyeon IM, Jinwon JUNG
  • Publication number: 20230134901
    Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.
    Type: Application
    Filed: October 19, 2022
    Publication date: May 4, 2023
    Inventors: Younghyun Ko, Jaeman Jang, SeungChan Choi, Min-Gu Kang, Sungju Choi
  • Publication number: 20230127842
    Abstract: A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.
    Type: Application
    Filed: October 21, 2022
    Publication date: April 27, 2023
    Applicant: LG Display Co., Ltd.
    Inventors: Min-Gu KANG, Younghyun KO, HongRak CHOI
  • Patent number: 11636805
    Abstract: The present specification provides a display device and a driving method thereof performing sampling for sensing a sampling voltage of a driving transistor using a fast mode in which a driving transistor operates by a sampling voltage formed in one storage capacitor, and data writing using the slow mode in which the driving transistor is operated by a data voltage formed in another storage capacitor.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: April 25, 2023
    Assignee: LG Display Co., Ltd.
    Inventors: YongHo Jang, Younghyun Ko
  • Publication number: 20230111218
    Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.
    Type: Application
    Filed: October 10, 2022
    Publication date: April 13, 2023
    Inventors: Min-Gu KANG, Younghyun KO, SeungChan CHOI, Jaeman JANG
  • Publication number: 20230061581
    Abstract: Provided are a thin film transistor army substrate and an electronic device including the same. The thin film transistor army substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.
    Type: Application
    Filed: October 27, 2022
    Publication date: March 2, 2023
    Inventor: Younghyun KO
  • Publication number: 20220399464
    Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the
    Type: Application
    Filed: May 24, 2022
    Publication date: December 15, 2022
    Applicant: LG DISPLAY CO., LTD.
    Inventors: Younghyun KO, SeungChan CHOI, Min-Gu KANG, Jaeman JANG