Abstract: Provided is a display device comprising a substrate, a first data line and a second data line disposed on the substrate and extended in a first direction, an anode electrode disposed on the first data line and the second data line, a pixel-defining film disposed over the anode electrode and defining an emission area, an organic light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the organic light-emitting layer, wherein each of the first data line and the second data line has a curved shape when viewed from a top where the first anode electrode and the second anode electrode overlap the anode electrode.

Abstract: A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 ? to 1400 ?, the first inorganic insulating layer has a thickness of 400 ? to 3500 ?, the second inorganic insulating layer has a thickness of 200 ? to 2400 ?, and the third inorganic insulating layer has a thickness of 4000 ? or more.

Abstract: A display device includes a plurality of pixel electrodes spaced apart from each other on a substrate, a plurality of light emitting elements disposed on the plurality of pixel electrodes, the plurality of light emitting elements including a first semiconductor layer, a semiconductor pattern disposed on the first semiconductor layer, a common electrode layer disposed on the semiconductor pattern, and a void disposed between the first semiconductor layer, the semiconductor pattern, and the common electrode layer. The plurality of light emitting elements include a first light emitting element and a second light emitting element.

Abstract: A light emitting element is capable of increasing light emission efficiency. The light emitting element includes a first semiconductor layer including a groove and a protrusion disposed around the groove, a light emitting layer disposed on the groove of the first semiconductor layer and having a shape corresponding to the groove, a second semiconductor layer disposed on the light emitting layer, and an insulating pattern layer disposed on the protrusion of the first semiconductor layer and surrounding the second semiconductor layer.

Abstract: A method of manufacturing a light emitting element, comprises placing a plurality of mask patterns on a substrate, forming first patterns on the substrate through the plurality of mask patterns, the first patterns recessed from an upper surface of the substrate, forming an undoped semiconductor layer on the substrate on which the first patterns are formed, etching the undoped semiconductor layer, forming a first semiconductor layer on the undoped semiconductor layer, forming an active layer on the first semiconductor layer, forming a second semiconductor layer on the active layer, and forming an electrode layer on the second semiconductor layer, wherein the undoped semiconductor layer includes second patterns recessed from a lower surface of the undoped semiconductor layer.

Abstract: A display device includes first banks spaced apart from one another and disposed on a substrate; a first electrode and a second electrode, each disposed on one of the first banks to cover each respective first bank and spaced apart from each other; and a light-emitting element disposed between the first electrode and the second electrode. The light-emitting element includes an active layer, the active layer is in a non-polarized state, and the active layer includes cubic gallium nitride (c-GaN).

Abstract: A display device comprises a plurality of pixel electrodes which are provided on a substrate, and a plurality of light emitting elements which are provided on the plurality of pixel electrodes, wherein each of the plurality of light emitting elements comprises a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer, and one or more of the plurality of light emitting elements comprise a capping layer included in the active layer, and another one of the plurality of light emitting elements does not comprise the capping layer in the active layer, wherein the capping layer comprises AlGaN.

Abstract: A display device includes a substrate, a plurality of pixel electrodes on the substrate and spaced apart from each other, a plurality of light-emitting elements on the plurality of pixel electrodes, respectively, and a common electrode layer on the plurality of light-emitting elements and to which a common voltage is applied. The plurality of light-emitting elements include a first light-emitting element that is configured to emit first light according to a first driving current and a second light-emitting element that is configured to emit second light according to a second driving current. An active layer of the first light-emitting element is the same as an active layer of the second light-emitting element.

Abstract: A display device includes light emitting elements disposed on a substrate. The light emitting elements include an emission area and a porous area including quantum dots.

Abstract: A display device includes light-emitting elements disposed on a substrate, wherein each of the light-emitting elements includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and a porous layer disposed on the second semiconductor layer.

Abstract: A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.

Abstract: Disclosed is an optical filter that has a high refractive index and low extinction coefficient characteristics in a narrowband of approximately 800 nm-1100 nm, and a sensor system comprising the same.

Abstract: There is provided a wireless communication device capable of providing two-way communication while minimizing the consumption of power so as to be continuously operable for a long period of time simply with battery power, without the aid of a constant power source. The wireless communication device includes: a wireless network interface connected to an access point (AP), which provides wireless local area network (WLAN) access; and a session maintenance packet transmission controller controlling the wireless network interface to repeatedly transmit a session maintenance packet, wherein the session maintenance packet includes a MAC keep-alive message, an address resolution protocol (ARP) response message, and a hole punching message.

Abstract: A multi-lamp electronic ballast for a high intensity discharge lamp is provided. The multi-lamp electronic ballast includes a first igniter connected to the inverter unit to induce a high voltage from a current input from the inverter unit and to apply the high voltage to the first lamp and a second igniter having the one side end connected to the inverter unit and the other side end connected in parallel to a second lamp.

Abstract: A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.

Abstract: An apparatus and method for forming an aperture of a vertical cavity surface emitting laser (VCSEL) by selective oxidation, in which resonance peak variations during the formation of the aperture can be measured using an optical spectrum analyzer, so that the size of the aperture can be precisely adjusted. The aperture forming apparatus includes: a furnace having a first window and a second window for transmitting light, and a stage for supporting a wafer for the VCSEL with a pre-oxide layer where an aperture is to be formed; a light source placed outside the furnace, for emitting light through the first window onto the top of the wafer seated on the stage; and an optical spectrum analyzer for detecting the light intensity by receiving light reflecting from the top of the wafer for the VCSEL and passing through the second window.

Abstract: An apparatus and method for forming an aperture of a vertical cavity surface emitting laser (VCSEL) by selective oxidation, in which resonance peak variations during the formation of the aperture can be measured using an optical spectrum analyzer, so that the size of the aperture can be precisely adjusted. The aperture forming apparatus includes: a furnace having a first window and a second window for transmitting light, and a stage for supporting a wafer for the VCSEL with a pre-oxide layer where an aperture is to be formed; a light source placed outside the furnace, for emitting light through the first window onto the top of the wafer seated on the stage; and an optical spectrum analyzer for detecting the light intensity by receiving light reflecting from the top of the wafer for the VCSEL and passing through the second window.

Abstract: A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.

Abstract: An apparatus for jetting ink utilizing a lamb wave and a method for producing the same, the apparatus including an ink chamber having nozzles, and an ejecting force source for supplying an ejecting force to eject the ink out of the nozzles. The ejecting force source includes inter-digital transducer electrodes for applying a voltage of a predetermined voltage, a piezoelectric element for generating the lamb wave by means of the voltage applied from the inter-digital transducer electrodes. Thus, as the voltage is applied to the inter-digital transducer electrodes, the lamb wave is generated from the lamb wave generating board, and the ink reserved in the ink chamber is ejected out of the nozzles.

Abstract: A method and apparatus for controlling the amount of ozone concentration in the layers of a film depositing system and the multi-layered structure produced thereby, whereby the concentration of ozone in each layer gradually changes from a low ozone concentration in the first deposited layer to a high ozone concentration in the last deposited layer.