Abstract: An image sensor includes a first pixel row and a second pixel row, each of the first and second pixel rows including pixels arranged in a first direction, the first and second pixel rows being adjacent to each other in a second direction crossing the first direction. The image sensor further includes device isolation patterns disposed between the first and second pixel rows and spaced apart from each other in the first direction, and supporting patterns disposed between the first and second pixel rows and interposed between the device isolation patterns. Each of the supporting patterns is connected to corresponding ones of the pixels.

Abstract: The present invention relates to a multi-influenza detection kit comprising monoclonal antibodies and a method of detecting multiple influenza viruses using the kit. More specifically, the present invention relates to a multi-influenza detection kit comprising monoclonal antibodies that bind specifically to influenza type A, type B, subtype H1, subtype H3 and subtype H5, and to a method of detecting influenza viruses using the kit. The multi-influenza detection kit comprising monoclonal antibodies according to the present invention can simultaneously detect influenza types A and B and subtypes H1, H3 and H5, and thus is useful for the rapid and highly sensitive on-site detection and diagnosis of influenza.

Abstract: The present invention relates to a multi-influenza detection kit comprising monoclonal antibodies and a method of detecting multiple influenza viruses using the kit. More specifically, the present invention relates to a multi-influenza detection kit comprising monoclonal antibodies that bind specifically to influenza type A, type B, subtype H1, subtype H3 and subtype H5, and to a method of detecting influenza viruses using the kit. The multi-influenza detection kit comprising monoclonal antibodies according to the present invention can simultaneously detect influenza types A and B and subtypes H1, H3 and H5, and thus is useful for the rapid and highly sensitive on-site detection and diagnosis of influenza.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: The present invention is related to a pharmaceutical composition and a dietary supplement for treating and preventing obesity, containing a wheatgrass extract as an active ingredient, it has been ascertained that the wheatgrass extract shows excellent anti-obesity effects such as significant inhibition of weight gain caused by a high fat diet, or lowering of neutral lipid levels in blood in a high fat diet-induced animal model. The wheatgrass extract of the present invention can be useful as a pharmaceutical composition and a dietary supplement for preventing and treating obesity.

Abstract: The present invention relates to a pharmaceutical composition for prevention and treatment of hyperlipidemia or fatty liver disease, the composition containing dichloromethane fractions as an active ingredient amongst fractions obtained by fractionating the alcohol extract of Triticum aestivum Lamarck leaves in an order of dichloromethane, ethyl acetate, and butanol.

Abstract: The present invention relates to a thermophilic arabinose isomerase and a method of manufacturing tagatose using the same, and more precisely, a gene encoding arabinose isomerase originating from the thermophile Thermotoga neapolitana DSM 5068, a recombinant expression vector containing the gene, a method of preparing a food grade thermophilic arabinose isomerase from the recombinant GRAS (Generally Recognized As Safe) strain transformed with the said expression vector, and a method of preparing tagatose from galactose using the said enzyme.

Abstract: The present invention relates to a cascade enzyme-linked immunosorbent assay, more precisely a cascade enzyme-linked immunosorbent assay using magnetic microparticles (MMPs) immobilized with the target antigen specific primary antibody and silica nanoparticles (SPs) immobilized with a cascade reaction initiator and the antigen-specific secondary antibody. When the method of the present invention is applied in the detection of an antigen in biosamples, the detection sensitivity can be significantly increased.

Abstract: The present invention relates to a method for producing tagatose using soy oligosaccharide or soluble sugar solution containing the same, more precisely, a method for producing tagatose comprising the following steps; hydrolyzing soy oligosaccharide by using ?-galactosidase selectively; producing tagatose continuously by enzymatic isomerization of galactose obtained from the hydrolysate; separating the produced tagatose by chromatography; and recycling the non-reacted materials.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.

Abstract: The present invention relates to a recombinant GRAS (Generally Recognized As Safe) strains expressing thermophilic arabinose isomerase as an active form and method of food grade tagatose by using the same, and more precisely, a gene encoding arabinose isomerase originating from the thermophilic Geobacillus stearothermophilus DSM22 and Geobacillus thermodenitrificans, a recombinant expression vector containing the gene, a recombinant GRAS strains expressing the thermophilic arabinose isomerase as an active form by transformed with the expression vector, and a method of preparing food grade tagatose from galactose by using the same.

Abstract: In a retarget process modeling method, an effect according to density of patterns, and shapes or distances with respect to neighboring patterns may be sufficiently reflected while a relatively small amount of time and few costs are consumed. The retarget process modeling method involves obtaining prediction data, by a modelling calculating unit, on a test layout using a first process model, obtaining bias data based on measurement data of the test layout and the prediction data, using the bias data to check and detect corresponding features of a representative pattern affected by a photoresist (PR) flow rate, generating kernels including a PR flow kernel in consideration of a sub resolution assist feature (SRAF) pattern of the representative pattern to determine an uncalibrated model including the kernels and obtaining a second process model by fitting the uncalibrated model to the measurement data to obtain a second process model.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

Abstract: A single-layer board on chip package substrate and a manufacturing method thereof are disclosed. In accordance with an embodiment of the present invention, the substrate includes an insulator, a first pad and a second pad, which are provided on an upper surface of the insulator, a through-hole, which is formed in the insulator such that a lower surface of the first pad is exposed, and a solder resist layer, which is formed on the upper surface of the insulator such that at least a portion of the second pad is exposed.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

Abstract: The present invention relates to a method for producing tagatose using soy oligosaccharide or soluble sugar solution containing the same, more precisely, a method for producing tagatose comprising the following steps; hydrolyzing soy oligosaccharide by using ?-galactosidase selectively; producing tagatose continuously by enzymatic isomerization of galactose obtained from the hydrolysate; separating the produced tagatose by chromatography; and recycling the non-reacted materials.

Abstract: The present invention relates to a cascade enzyme-linked immunosorbent assay, more precisely a cascade enzyme-linked immunosorbent assay using magnetic microparticles (MMPs) immobilized with the target antigen specific primary antibody and silica nanoparticles (SPs) immobilized with a cascade reaction initiator and the antigen-specific secondary antibody. When the method of the present invention is applied in the detection of an antigen in biosamples, the detection sensitivity can be significantly increased.

Abstract: A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.