Patents by Inventor Young Mo JUNG

Young Mo JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Positive electrode active material particle including core containing lithium cobalt oxide and shell containing composite metal oxide and preparation method thereof
    Patent number: 11942632
    Abstract: A positive electrode active material particle includes a core that contains lithium cobalt oxide represented by the following Chemical Formula LiaCo(1-x)MxO2-yAy and a shell that is coated on the surface of the core and contains composite metal oxide of a metal with an oxidation number of +2 and a metal with an oxidation number of +3. In particular, M is at least one selected from the group consisting of Ti, Mg, Zn, Si, Al, Zr, V, Mn, Nb and Ni. A is oxygen-substitutional halogen and 1.00?a?1.05, 0?x?0.05, and 0?y?0.001.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: March 26, 2024
    Assignee: LG Energy Solution, Ltd.
    Inventors: Hyuck Hur, Chi Ho Jo, Bo Ram Lee, Sung bin Park, Young uk Park, Wang Mo Jung
  • Method for forming PN junction in graphene with application of DNA and PN junction structure formed using the same
    Patent number: 9831452
    Abstract: A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: November 28, 2017
    Assignee: Korea Institute of Science and Technology
    Inventors: Chulki Kim, Yeong Jun Kim, Young Mo Jung, Seong Chan Jun, Taikjin Lee, Seok Lee, Young Tae Byun, Deok Ha Woo, Sun Ho Kim, Min Ah Seo, Jae Hun Kim, Jong Chang Yi
  • METHOD FOR FORMING PN JUNCTION IN GRAPHENE WITH APPLICATION OF DNA AND PN JUNCTION STRUCTURE FORMED USING THE SAME
    Publication number: 20150243917
    Abstract: A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.
    Type: Application
    Filed: May 20, 2014
    Publication date: August 27, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chulki KIM, Yeong Jun KIM, Young Mo JUNG, Seong Chan JUN, Taikjin LEE, Seok LEE, Young Tae BYUN, Deok Ha WOO, Sun Ho KIM, Min Ah SEO, Jae Hun KIM, Jong Chang YI