Abstract: A method for performing an ultrasonic treatment includes: setting, by a processor, information for a moving trajectory, an ultrasound irradiation unit, and/or an ultrasound irradiation spot; outputting, by the processor, a transducer control signal based on the set information; ultrasonically irradiating, by a transducer, based on the transducer control signal, one or more points while moving following a preset moving trajectory; scanning, by the transducer, the one or more irradiated points to obtain an image; determining, by the processor, based on the image, whether an ultrasound irradiation area contains a remaining tumor; and based on determining that the ultrasound irradiation area contains a remaining tumor, performing additional ultrasonic irradiation, wherein performing the additional ultrasonic irradiation is based on remaining tumor possibility information generated based on a machine learning process.

Abstract: A method for performing an ultrasonic treatment includes: setting, by a processor, information for a moving trajectory, an ultrasound irradiation unit, and/or an ultrasound irradiation spot; outputting, by the processor, a transducer control signal based on the set information; ultrasonically irradiating, by a transducer, based on the transducer control signal, one or more points while moving following a preset moving trajectory; scanning, by the transducer, the one or more irradiated points to obtain an image; determining, by the processor, based on the image, whether an ultrasound irradiation area contains a remaining tumor; and based on determining that the ultrasound irradiation area contains a remaining tumor, performing additional ultrasonic irradiation, wherein performing the additional ultrasonic irradiation is based on remaining tumor possibility information generated based on a machine learning process.

Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.

Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.