Abstract: The present invention relates to an organic electroluminescent device comprising at least one light-emitting layer between an anode and a cathode, wherein the light-emitting layer comprises a host and a phosphorescent dopant; the host comprises plural host compounds; at least a first host compound of the plural host compounds has a structure of a nitrogen-containing heterocyclic linker bonded to a nitrogen atom of a carbazole of an indole-carbazole, indene-carbazole, benzofuran-carbazole, or benzothiophene-carbazole residue; and a second host compound has a carbazole-aryl-carbazole or carbazole-carbazole structure. According to the present invention, by using a specific multi-component host different from the conventional organic electroluminescent device, an organic electroluminescent device of significantly improved lifespan is provided.

Abstract: A semiconductor device fabrication apparatus includes: a reactive chamber having a gas discharge hole and providing a reactive space therein closed against the outside; a susceptor installed inside the reactive chamber for mounting a substrate, a target of a process; and a plurality of gas injection holes arranged in a ring shape along an inner wall of the reactive chamber, wherein an outer annular passage and an inner annular passage are formed along the side wall inside the side wall of the reactive chamber, the outer annular passage and the inner annular passage are connected to each other by means of a connection passage, the outer annular passage is connected to the outside of the reactive chamber through a gas supply pipe and the inner annular passage is connected to the inside of the reactive chamber through a plurality of gas supply pipes.

Abstract: A semiconductor device manufacturing apparatus using plasma and a thin film forming method using the apparatus. The apparatus comprises a chamber provided with an inlet and an outlet of gas, the chamber having an upper part with a dome configuration; a susceptor provided in the chamber to permit a wafer to be placed thereon; and a plasma electrode to which RF power is applied to form plasma in the chamber; wherein the plasma electrode has a dome configuration to cover the upper part, and wherein the upper polar part of the electrode is cut horizontally to form an opening. According to the present invention, it is possible to form thin film having not only good thickness uniformity but also excellent film quality.

Abstract: A method of forming a silicon nitride thin film by using a PECVD process, in which a silicon nitride thin film is formed according to the PECVD process a temperature range of about 550 to 700° C. by using plasma maintained by a high frequency power in the range of about 200 to 1000 W. Plasma can be generated by using a mixed gas of SiH4, NH3 and N2. According to the invention, a hot temperature process is associated with the PECVD process so that the silicon nitride thin film of the invention can be free from problems of the silicon nitride thin films formed by the PECVD process and the LPCVD process.