Abstract: A memory system includes: an error correction code generation circuit suitable for generating an error correction code including one or more symbols for write data including a plurality of symbols, to output a codeword including the write data and the error correction code; a first data mapping circuit suitable for mapping the symbols of the codeword to a dataword; and a memory suitable for storing the dataword.

Abstract: A parity generation logic circuit includes a first parity generation part and a second parity generation part. The first parity generation part is configured to generate a first parity in a first error correction mode having a first error correction capability for original data. The second parity generation part is configured to generate a second parity using the first parity in a second error correction mode having a second error correction capability.

Abstract: A parity generation logic circuit includes a first parity generation part and a second parity generation part. The first parity generation part is configured to generate a first parity in a first error correction mode having a first error correction capability for original data. The second parity generation part is configured to generate a second parity using the first parity in a second error correction mode having a second error correction capability.

Abstract: A semiconductor device includes a flag generation circuit and a write operation circuit. The flag generation circuit generates an error scrub flag if an error scrub operation is performed. The write operation circuit controls a write operation in response to the error scrub flag. The error scrub operation includes an internal read operation for outputting read data from a cell array, a data correction operation for correcting an error included in the read data to generate corrected data, and an internal write operation for storing the corrected data into the cell array.

Abstract: A memory controller may be provided. A memory module may be provided. A memory system may be provided. A method of operating the memory system, the memory controller, or memory module may be provided. The memory system may include a memory controller and a memory module. The memory controller may provide data to the memory module to store data within the memory module. The memory controller may generate an index for storing the data. The index may be stored within the memory module.

Abstract: A memory controller may be provided. A memory module may be provided. A memory system may be provided. A method of operating the memory system, the memory controller, or memory module may be provided. The memory system may include a memory controller and a memory module. The memory controller may provide data to the memory module to store data within the memory module. The memory controller may generate an index for storing the data.

Abstract: A memory system includes: an error correction code generation circuit suitable for generating an error correction code including one or more symbols for write data including a plurality of symbols, to output a codeword including the write data and the error correction code; a first data mapping circuit suitable for mapping the symbols of the codeword to a dataword; and a memory suitable for storing the dataword.

Abstract: A memory controller includes a command input unit suitable for receiving a write command, a read command, and a send command, a command counting unit suitable for performing a counting operation in response to the write command to produce a counted data, a first Error Correction Code (ECC) encoding unit suitable for performing a first ECC encoding onto a data that is read from a memory device in response to the read command to produce a first ECC encoded data, a second ECC encoding unit suitable for performing a second ECC encoding onto the counted data in response to the send command to produce a second ECC encoded data, and a data output unit suitable for combining the first ECC encoded data and the second ECC encoded data to output a read data.

Abstract: Disclosed is a memory controller including a command decoder suitable for generating a data identifier of read data by decoding a read command, an update unit suitable for updating information of the read data in response to the data identifier of the read data, and a data output control unit suitable for storing data read from a memory device according to the read command, and selectively outputting the stored data as the read data based on the updated information.

Abstract: A semiconductor device includes: a first memory chip including a plurality of first memory regions; a temporary memory chip including a plurality of temporary memory regions; and a control chip suitable for accessing a first access target memory region among the plurality of first memory regions or a first temporary memory region among the plurality of temporary memory regions based on first access information and first temperature readout information corresponding to the plurality of first memory regions.

Abstract: A semiconductor system may be provided. The semiconductor system may include a fail information generator and a data mapping circuit. The fail information generator may detect a data fail address of a data storage region. The data mapping circuit may change a mapping table based on the data fail address, and transmit data to be stored at the data fail address in the data storage region, to a parity storage region.

Abstract: A memory controller includes a command input unit suitable for receiving a write command, a read command, and a send command, a command counting unit suitable for performing a counting operation in response to the write command to produce a counted data, a first Error Correction Code (ECC) encoding unit suitable for performing a first ECC encoding onto a data that is read from a memory device in response to the read command to produce a first ECC encoded data, a second ECC encoding unit suitable for performing a second ECC encoding onto the counted data in response to the send command to produce a second ECC encoded data, and a data output unit suitable for combining the first ECC encoded data and the second ECC encoded data to output a read data.

Abstract: A semiconductor device includes a flag generation circuit and a write operation circuit. The flag generation circuit generates an error scrub flag if an error scrub operation is performed. The write operation circuit controls a write operation in response to the error scrub flag. The error scrub operation includes an internal read operation for outputting read data from a cell array, a data correction operation for correcting an error included in the read data to generate corrected data, and an internal write operation for storing the corrected data into the cell array.

Abstract: Disclosed is a memory controller including a command decoder suitable for generating a data identifier of read data by decoding a read command, an update unit suitable for updating information of the read data in response to the data identifier of the read data, and a data output control unit suitable for storing data read from a memory device according to the read command, and selectively outputting the stored data as the read data based on the updated information,

Abstract: An error correction circuit includes: a syndrome calculation block suitable for generating a syndrome based on a data and an error correction code; an error location polynomial generation block suitable for generating an error location polynomial for detecting a location of an error based on the syndrome, where the number of operation stages used for generating the error location polynomial is controlled based on condition information; and a chien search block suitable for correcting an error of the data based on the error location polynomial.

Abstract: A memory device may include one or more multi-channel memories and an interface unit suitable for interfacing the multi-channel memories. The interface unit may include a first data interface suitable for transferring data for the first channel of the multi-channel memories, a second data interface suitable for transferring data for the second channel of the multi-channel memories, and an extra data interface suitable for transferring data for a selected one of the first channel and the second channel so that the data is additionally transmitted.

Abstract: A memory controller may be provided. A memory module may be provided. A memory system may be provided. A method of operating the memory system, the memory controller, or memory module may be provided. The memory system may include a memory controller and a memory module. The memory controller may provide data to the memory module to store data within the memory module. The memory controller may generate an index for storing the data.

Abstract: A semiconductor system may be provided. The semiconductor system may include a fail information generator and a data mapping circuit. The fail information generator may detect a data fail address of a data storage region. The data mapping circuit may change a mapping table based on the data fail address, and transmit data to be stored at the data fail address in the data storage region, to a parity storage region.

Abstract: A semiconductor system includes one or more core chips including a plurality of memory banks; one or more replacement storage units; and a base chip suitable for: first detecting a memory bank having an access frequency that satisfies a first condition, second detecting whether an utilization rate of the first detected memory bank satisfies a second condition, and replacing the second detected memory bank with one among the replacement storage units.

Abstract: A semiconductor system includes one or more core chips including a plurality of memory banks; one or more replacement storage units; and a base chip suitable for: first detecting a memory bank having an access frequency that satisfies a first condition, second detecting whether an utilization rate of the first detected memory bank satisfies a second condition, and replacing the second detected memory bank with one among the replacement storage units.