Abstract: A semiconductor device manufacturing method includes forming a cell gate structure in a substrate comprising a cell area and a peripheral circuit area; forming bit line structures on the cell area; forming a peripheral structure comprising a peripheral gate structure on the peripheral circuit area; forming a semiconductor material layer covering the bit line structures and the peripheral structure; and forming a contact plug between the bit line structures by laser annealing the semiconductor material layer using a laser beam. Forming the contact plug includes crystallizing an upper portion of the semiconductor material layer by performing a primary laser annealing process to form a first preliminary crystal layer; crystallizing a lower portion of the semiconductor material layer by performing a secondary laser annealing process to form a second crystal layer; and removing an upper portion of the first preliminary crystal layer to form a first crystal layer.

Abstract: An electrostatic chuck may include a body, a body; an internal electrode in the body, wherein the internal electrode is configured to generate an electrostatic force when a voltage is applied to the internal electrode; and a coating layer on an outer surface of the body, wherein the coating layer comprises a film forming material including a silicon-containing material.

Abstract: A substrate supporting device may include a cooling plate including a cooling hole, a thermal-insulation plate on the cooling plate, and a chucking plate placed on the thermal-insulation plate. The chucking plate may include a heater. The thermal-insulation plate may include an adiabatic space, which is recessed from a top surface of the thermal-insulation plate by a depth in a downward direction. The cooling plate may include a connection hole, which vertically extends and is connected to the adiabatic space.