Abstract: An apparatus and method for measuring air currents on the surface of a substrate, which can accurately measure the magnitude and direction of air currents on the surface of a wafer with wafer-type air current measurement sensors, are provided. The apparatus includes: a first air current measurement module measuring a magnitude of air currents on a surface of a first substrate, which is processed in accordance with a semiconductor manufacturing process; a second air current measurement module measuring a movement direction of the air currents; and a power module supplying power to the first and second air current measurement modules, wherein the first air current measurement module, the second air current measurement module, and the power module are mounted on a second substrate, which has the same shape as the first substrate.

Abstract: Disclosure relates to modified sulfur, preparation method thereof, preparation equipment thereof. The modified sulfur has spinnability or includes micro-structures such as fiber-, film- and network-like structure. The modified sulfur can be prepared by inducing polymerization with ultrasonic or ageing. The modified sulfur has various excellent features such as anticorrosiveness, waterproofing, strength, and fast drying and can control the features depending on its viscosity or polymerization degree. In addition due to the above features, the modified sulfur can be applied to anticorrosive or waterproofing material and can prepare anticorrosive or waterproofing material which has good workability, hardening, salt spray resistance, and weldability exceeding a certain level, and specially improved adhesiveness.

Abstract: Disclosure relates to modified sulfur, preparation method thereof, preparation equipment thereof. The modified sulfur has spinnability or includes micro-structures such as fiber-, film- and network-like structure. The modified sulfur can be prepared by inducing polymerization with ultrasonic or ageing. The modified sulfur has various excellent features such as anticorrosiveness, waterproofing, strength, and fast drying and can control the features depending on its viscosity or polymerization degree. In addition due to the above features, the modified sulfur can be applied to anticorrosive or waterproofing material and can prepare anticorrosive or waterproofing material which has good workability, hardening, salt spray resistance, and weldability exceeding a certain level, and specially improved adhesiveness.

Abstract: Disclosure relates to modified sulfur, preparation method thereof, preparation equipment thereof. The modified sulfur has spinnability or includes micro-structures such as fiber-, film- and network-like structure. The modified sulfur can be prepared by inducing polymerization with ultrasonic or ageing. The modified sulfur has various excellent features such as anticorrosiveness, waterproofing, strength, and fast drying and can control the features depending on its viscosity or polymerization degree. In addition due to the above features, the modified sulfur can be applied to anticorrosive or waterproofing material and can prepare anticorrosive or waterproofing material which has good workability, hardening, salt spray resistance, and weldability exceeding a certain level, and specially improved adhesiveness.

Abstract: Disclosure relates to modified sulfur, preparation method thereof, preparation equipment thereof. The modified sulfur has spinnability or includes micro-structures such as fiber-, film- and network-like structure. The modified sulfur can be prepared by inducing polymerization with ultrasonic or ageing. The modified sulfur has various excellent features such as anticorrosiveness, waterproofing, strength, and fast drying and can control the features depending on its viscosity or polymerization degree. In addition due to the above features, the modified sulfur can be applied to anticorrosive or waterproofing material and can prepare anticorrosive or waterproofing material which has good workability, hardening, salt spray resistance, and weldability exceeding a certain level, and specially improved adhesiveness.

Abstract: Disclosure relates to modified sulfur, preparation method thereof, preparation equipment thereof. The modified sulfur has spinnability or includes micro-structures such as fiber-, film- and network-like structure. The modified sulfur can be prepared by inducing polymerization with ultrasonic or ageing. The modified sulfur has various excellent features such as anticorrosiveness, waterproofing, strength, and fast drying and can control the features depending on its viscosity or polymerization degree. In addition due to the above features, the modified sulfur can be applied to anticorrosive or waterproofing material and can prepare anticorrosive or waterproofing material which has good workability, hardening, salt spray resistance, and weldability exceeding a certain level, and specially improved adhesiveness.

Abstract: A method for fabricating a semiconductor device includes forming a first mask pattern on a first film to extend in a first direction, forming a first spacer on either side wall of the first mask pattern, forming a second film to cover the first spacer and the first film, and forming a second mask pattern on the second film. The second mask pattern extends in a second direction different from the first direction. The method further includes forming a second spacer on either side wall of the second mask pattern, etching the first film using the first spacer and the second spacer as etch masks to form a contact pattern, and removing the first and second spacers to expose the contact pattern.

Abstract: In a method of manufacturing a semiconductor device, sacrificial layer patterns extending in a first direction are formed on an etch target layer. Preliminary mask patterns are formed on opposite sidewall surfaces of each of the sacrificial layer patterns. A filling layer is formed to fill a space between the preliminary mask patterns. Upper portions of the preliminary mask patterns are etched to form a plurality of mask patterns. Each of the mask patterns is symmetric with respect to a plane passing a center point of each of the mask patterns in a second direction substantially perpendicular to the first direction and extending in the first direction. The sacrificial layer patterns and the filling layer are removed. The etch target layer is etched using the mask patterns as an etching mask to form a plurality of target layer patterns.

Abstract: A method for fabricating a semiconductor device includes forming a first mask pattern on a first film to extend in a first direction, forming a first spacer on either side wall of the first mask pattern, forming a second film to cover the first spacer and the first film, and forming a second mask pattern on the second film. The second mask pattern extends in a second direction different from the first direction. The method further includes forming a second spacer on either side wall of the second mask pattern, etching the first film using the first spacer and the second spacer as etch masks to form a contact pattern, and removing the first and second spacers to expose the contact pattern.

Abstract: In a method of manufacturing a semiconductor device, sacrificial layer patterns extending in a first direction are formed on an etch target layer. Preliminary mask patterns are formed on opposite sidewall surfaces of each of the sacrificial layer patterns. A filling layer is formed to fill a space between the preliminary mask patterns. Upper portions of the preliminary mask patterns are etched to form a plurality of mask patterns. Each of the mask patterns is symmetric with respect to a plane passing a center point of each of the mask patterns in a second direction substantially perpendicular to the first direction and extending in the first direction. The sacrificial layer patterns and the filling layer are removed. The etch target layer is etched using the mask patterns as an etching mask to form a plurality of target layer patterns.

Abstract: Disclosure relates to modified sulfur, preparation method thereof, preparation equipment thereof. The modified sulfur has spinnability or includes micro-structures such as fiber-, film- and network-like structure. The modified sulfur can be prepared by inducing polymerization with ultrasonic or ageing. The modified sulfur has various excellent features such as anticorrosiveness, waterproofing, strength, and fast drying and can control the features depending on its viscosity or polymerization degree. In addition due to the above features, the modified sulfur can be applied to anticorrosive or waterproofing material and can prepare anticorrosive or waterproofing material which has good workability, hardening, salt spray resistance, and weldability exceeding a certain level, and specially improved adhesiveness.