Abstract: Provided is a semi-noncombustible building thermal insulation material including: a core layer; and a noncombustible coating layer formed with a thickness of 0.1 to 3 mm on one or both sides of the core layer, wherein the noncombustible coating layer includes aluminum oxide, silicon oxide, sodium silicate, and calcium carbonate.

Abstract: A display device includes a light emitting element layer including first light emitting elements, second light emitting elements, and third light emitting elements, a partition wall member disposed on the light emitting element layer, and including first receiving openings, second receiving openings, and third receiving openings, first color conversion layers disposed in the first receiving openings, second color conversion layers disposed in the second receiving openings, scattering layers disposed in the third receiving openings, a cover layer, and the scattering layers, and a color filter layer including a first color filter layer including a first color filter material, a second color filter layer including a second color filter material, and a third color filter layer including a third color filter material. The partition wall member includes a first partition wall member including the first color filter material, and a second partition wall member including the second color filter material.

Abstract: A display device includes: a substrate including a first emission area, a second emission area, and a third emission area; a first wavelength conversion pattern overlapping the first emission area; a second wavelength conversion pattern overlapping the second emission area; and a light-transmitting pattern overlapping the third emission area, wherein the first wavelength conversion pattern includes first wavelength shifters configured to convert a first light into a second light, and first scatterers, the second wavelength conversion pattern includes second wavelength shifters configured to convert the first light into a third light, and second scatterers, and a ratio between a concentration of the first wavelength shifters and a concentration of the second wavelength shifters is 1:1.1 to 1:1.3.

Abstract: An embodiment provides a display device and a method of manufacturing the display device. The display device includes a display layer, and a light controlling layer that is disposed on the display layer and includes a bank, a middle bank part directly adjacent to the bank, and a color conversion layer. The light controlling layer includes an opening in which the bank and the middle bank part are not disposed. The color conversion layer may include a base color conversion layer disposed in at least a portion of the opening and a protruding color conversion layer overlapping the middle bank part in a plan view.

Abstract: A central management server includes a W/A code collecting unit configured to collect a code (W/A code) indicating an abnormality signal, wherein the W/A code is generated by at least one of each of components operating an elevator, a control panel corresponding to the elevator, and a terminal corresponding to the control panel and is configured to include a code representing a W/A code generating entity and a problem, a W/A code database configured to store the received W/A code, information for interpreting the W/A code, and a determination reference, and a determination unit configured to set at least one of a warning state and an alert state for an inspection item of the elevator based on the W/A code and the determination reference.

Abstract: A display device includes: a substrate including a first emission area, a second emission area, and a third emission area; a first wavelength conversion pattern overlapping the first emission area; a second wavelength conversion pattern overlapping the second emission area; and a light-transmitting pattern overlapping the third emission area, wherein the first wavelength conversion pattern includes first wavelength shifters configured to convert a first light into a second light, and first scatterers, the second wavelength conversion pattern includes second wavelength shifters configured to convert the first light into a third light, and second scatterers, and a ratio between a concentration of the first wavelength shifters and a concentration of the second wavelength shifters is 1:1.1 to 1:1.3.

Abstract: A display device includes a display layer and a light controlling layer. The light controlling layer is disposed on a surface of the display layer. The light controlling layer includes a color filter and a scattering layer. The color filter is disposed between the scattering layer and the display layer in a direction perpendicular to the surface of the display layer.

Abstract: Provided is a semi-noncombustible building thermal insulation material including: a core layer; and a noncombustible coating layer formed with a thickness of 0.1 to 3 mm on one or both sides of the core layer, wherein the noncombustible coating layer includes aluminum oxide, silicon oxide, sodium silicate, and calcium carbonate.

Abstract: A display device includes: a substrate including a first emission area, a second emission area, and a third emission area; a first wavelength conversion pattern overlapping the first emission area; a second wavelength conversion pattern overlapping the second emission area; and a light-transmitting pattern overlapping the third emission area, wherein the first wavelength conversion pattern includes first wavelength shifters configured to convert a first light into a second light, and first scatterers, the second wavelength conversion pattern includes second wavelength shifters configured to convert the first light into a third light, and second scatterers, and a ratio between a concentration of the first wavelength shifters and a concentration of the second wavelength shifters is 1:1.1 to 1:1.3.

Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Abstract: Disclosed is a solid-state dye-sensitized solar cell with improved long-term stability containing a pyridine-based compound as an additive. In particular, the solid-state dye-sensitized solar cell includes a hole transport layer containing a pyridine-based additive mixed with a hole transport material to provide a solid-state hole transport layer in the solid-state dye-sensitized solar cell. Accordingly, superior initial efficiency and substantially improved long-term stability of the solid-state dye-sensitized solar cell may be obtained. Further, the dye-sensitized solar cell may be manufactured using a simple process without using a sealing agent.

Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Abstract: Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.

Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

Abstract: Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.

Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

Abstract: A lower limit of a heating factor for heating control of an oxygen sensor is adjusted on the basis of the heating factor, a P-jump delay time calculated based on an output voltage of the oxygen sensor, and a diagnosis index of the oxygen sensor, and thereby an engine may be stably controlled even if the oxygen sensor is aged.

Abstract: A manufacturing method of a polyurethane foam injected with strand mats and a device for increasing the volume of the strand mats. The method comprises the steps of: increasing the volume of each of the strand mats to weaken the cohesion between glass fibers in each of the strand mats; continuously supplying and transferring the volume-increased strand mats; spraying a polyurethane foam solution on the continuously transferred strand mats; and foam molding the polyurethane foam solution in which the strand mats are immersed, into a polyurethane foam. Because the cohesion between the glass fibers in the strand mat is weakened and the volume of the strand mat is increased, the polyurethane foam solution uniformly permeates into the strand mats. As a result, the productivity of the polyurethane foam is improved and the variations in a variety of the mechanical properties are minimized.

Abstract: A method and an apparatus for manufacturing a polyurethane foam injected with strand mats. After a polyurethane foam solution is sprayed on the strand mats, the strand mats are moved upward and downward by prominences and depressions and then intermittently pressed by a pressing device, thereby the air in the strand mats being exhausted to the outside. Therefore, the polyurethane foam solution uniformly permeates into the strand mats. As a result, the insulating effect and mechanical strength of the polyurethane foam are increased, uniform surface with no air spaces is obtained, the mechanical properties are made uniform, and shrinkage, cracking, distortion and the like are prevented under a super-low temperature such as less than ?165° C.