Abstract: A touch screen panel includes a substrate including an active area and a non-active area disposed at an external side of the active area, first sensing electrodes disposed in the active area, the first sensing electrodes connected to each other and extending in a first direction, first connection patterns connecting adjacent first sensing electrodes, second sensing electrodes connected to each other and extending in a second direction crossing the first direction, second connection patterns connecting adjacent second sensing electrodes, and metal mesh patterns overlapping first portions of the first or second sensing electrodes.

Abstract: A touch screen panel includes a substrate including an active area and a non-active area disposed at an external side of the active area, first sensing electrodes disposed in the active area, the first sensing electrodes connected to each other and extending in a first direction, first connection patterns connecting adjacent first sensing electrodes, second sensing electrodes connected to each other and extending in a second direction crossing the first direction, second connection patterns connecting adjacent second sensing electrodes, and metal mesh patterns overlapping first portions of the first or second sensing electrodes.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.