Abstract: A deposition apparatus for depositing a deposition material on a base substrate disposed on a mask, includes: a mask assembly including a mask frame which defines an opening therein and surrounds the opening, and the mask disposed on the mask frame; an electrostatic chuck disposed on the base substrate; and a plate disposed on the electrostatic chuck. The electrostatic chuck includes a plurality of magnetic bodies, and a magnetic property of at least one magnetic body among the plurality of magnetic bodies is different from a magnetic property of remaining magnetic bodies except for the at least one magnetic body among the plurality of magnetic bodies.

Abstract: A deposition apparatus includes a plate; electrostatic chucks including a first surface on which the plate is disposed; and a second surface on which a substrate is supported; and a control device that controls a flatness between the electrostatic chucks, and each of the electrostatic chucks includes driving shafts disposed through an area of an edge of the first surface of each of the electrostatic chucks, and the control device controls the flatness between the electrostatic chucks through the driving shafts by measuring a height deviation between the electrostatic chucks.

Abstract: An articulator for dental use includes a first base, a second base coupled to the first base, and an occlusion pin configured to couple the first base and the second base in a closed position. The first base includes a first base body including a first groove configured to receive plaster, a first hinge portion configured to extend outwardly from one end of the first base body, and a plurality of pin holes. The second base includes a second base body including a second groove configured to receive the plaster, a second hinge portion configured to extend outwardly from one end of the second base body, and a plurality of guide pin holes. The second hinge portion is configured to couple to the first hinge portion via the occlusion pin in the closed position.

Abstract: An articulator for dental use includes a first base, a second base coupled to the first base, and an occlusion pin configured to couple the first base and the second base in a closed position. The first base includes a first base body including a first groove configured to receive plaster, a first hinge portion configured to extend outwardly from one end of the first base body, and a plurality of pin holes. The second base includes a second base body including a second groove configured to receive the plaster, a second hinge portion configured to extend outwardly from one end of the second base body, and a plurality of guide pin holes. The second hinge portion is configured to couple to the first hinge portion via the occlusion pin in the closed position.

Abstract: An articulator lower tray is provided herein. The articulator lower tray as disclosed herein may include a tray body part, an abutment support protrusion parts, and a cover part. The tray body part may include abutment pin holes formed at an interval, the abutment support protrusion parts may be formed at either side of the abutment pin holes, and the cover part may be disposed to cover tops of the abutment pin holes located between the abutment support protrusion parts. The articulator lower tray may further include an abutment pin which may be inserted into one of the abutment pin holes through the cover part.

Abstract: An articulator for dental use includes a first base, a second base coupled to the first base, and an occlusion pin configured to couple the first base and the second base in a closed position. The first base includes a first base body including a first groove configured to receive plaster, a first hinge portion configured to extend outwardly from one end of the first base body, and a plurality of pin holes. The second base includes a second base body including a second groove configured to receive the plaster, a second hinge portion configured to extend outwardly from one end of the second base body, and a plurality of guide pin holes. The second hinge portion is configured to couple to the first hinge portion via the occlusion pin in the closed position.

Abstract: A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region. Source and drain regions formed in the active regions on respective sides of each of the gate electrode structures and self-aligned contact pads are formed in the cell region in contact with the source and drain regions. An insulating interlayer is formed on the semiconductor substrate between the self-aligned contact pads, and etch stoppers are formed on the insulating interlayer between the self-aligned contact pads in the cell region.

Abstract: A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region. Source and drain regions formed in the active regions on respective sides of each of the gate electrode structures and self-aligned contact pads are formed in the cell region in contact with the source and drain regions. An insulating interlayer is formed on the semiconductor substrate between the self-aligned contact pads, and etch stoppers are formed on the insulating interlayer between the self-aligned contact pads in the cell region.

Abstract: A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region. Source and drain regions formed in the active regions on respective sides of each of the gate electrode structures and self-aligned contact pads are formed in the cell region in contact with the source and drain regions. An insulating interlayer is formed on the semiconductor substrate between the self-aligned contact pads, and etch stoppers are formed on the insulating interlayer between the self-aligned contact pads in the cell region.

Abstract: A method of fabricating a recess channel array transistor. Using a mask layer pattern having a high etch selectivity with respect to a silicon substrate, the silicon substrate and an isolation insulating layer are etched to form a recess channel trench. After forming a gate insulating layer and a recess gate stack on the recess channel trench, a source and a drain are formed in the silicon substrate adjacent to both sidewalls of the recess gate stack, thereby completing the recess channel array transistor. Because the mask layer pattern having the high etch selectivity with respect to the silicon substrate is used, a depth of the recess channel trench is easily controlled while good etching uniformity of the silicon substrate is obtained.

Abstract: A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region. Source and drain regions formed in the active regions on respective sides of each of the gate electrode structures and self-aligned contact pads are formed in the cell region in contact with the source and drain regions. An insulating interlayer is formed on the semiconductor substrate between the self-aligned contact pads, and etch stoppers are formed on the insulating interlayer between the self-aligned contact pads in the cell region.

Abstract: A method of fabricating a recess channel array transistor. Using a mask layer pattern having a high etch selectivity with respect to a silicon substrate, the silicon substrate and an isolation insulating layer are etched to form a recess channel trench. After forming a gate insulating layer and a recess gate stack on the recess channel trench, a source and a drain are formed in the silicon substrate adjacent to both sidewalls of the recess gate stack, thereby completing the recess channel array transistor. Because the mask layer pattern having the high etch selectivity with respect to the silicon substrate is used, a depth of the recess channel trench is easily controlled while good etching uniformity of the silicon substrate is obtained.

Abstract: An apparatus and method for encrypting/decrypting information, and the encrypting/decrypting system using the same, and a computer readable recording medium storing programs for realizing the above are disclosed. A method for encrypting information on a basic element-by-basic element basis, includes the steps of: a) receiving information to be encrypted; b) generating random number maps; c) decomposing the information into a plurality of basic elements which are classified into multiple channels; d) encrypting the basic elements and generating encrypted information; and e) outputting the encrypted information.

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom. More particularly, the present invention is to provide the vinyl-phenyl monomers expressed by formula (1) which are capable of various polymerization such as radical polymerization, cation polymerization, anion polymerization and metallocene catalyzed polymerization due to resonance effect of phenyl group and changing characteristics variously and thus, suitable in the synthesis of general-purpose polymers which can be used in photo-functional materials by forming a complex with a metal component having an optical characteristic.

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom. More particularly, the present invention is to provide the vinyl-phenyl monomers expressed by formula (1) which are capable of various polymerization such as radical polymerization, cation polymerization, anion polymerization and metallocene catalyzed polymerization due to resonance effect of phenyl group and changing characteristics variously and thus, suitable in the synthesis of general-purpose polymers which can be used in photo-functional materials by forming a complex with a metal component having an optical characteristic.

Abstract: Disclosed are functionalized styrene derivatives containing carbazole and their anionic polymerization. Styrene derivatives containing carbazole, and homopolymers or copolymers of the styrene derivatives can be synthesized by the anionic polymerization method. Thusly synthesized high molecular weight polymer containing carbazole has advantages of thermal stability, optical properties, and defined molecular weight and limited molecular weight distribution.

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom.

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom. More particularly, the present invention is to provide the vinyl-phenyl monomers expressed by formula (1) which are capable of various polymerization such as radical polymerization, cation polymerization, anion polymerization and metallocene catalyzed polymerization due to resonance effect of phenyl group and changing characteristics variously and thus, suitable in the synthesis of general-purpose polymers which can be used in photo-functional materials by forming a complex with a metal component having an optical characteristic.

Abstract: Disclosed are functionalized styrene derivatives containing carbazole and their anionic polymerization. Styrene derivatives containing carbazole, and homopolymers or copolymers of the styrene derivatives can be synthesized by the anionic polymerization method. Thusly synthesized high molecular weight polymer containing carbazole has advantages of thermal stability, optical properties, and defined molecular weight and limited molecular weight distribution.