Patents by Inventor Young-sun Hwang
Young-sun Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8518831Abstract: A method of forming semiconductor memory device includes forming first to fourth spacers over a target layer including a first region and second regions adjacent to the first region so that a first spacer group including the first spacers spaced at a first interval is formed in the first region of the target layer, a second spacer group including the second spacers spaced at second intervals is formed in the second regions, a third spacer is formed between the first and the second spacer groups, and fourth spacers are formed between the third spacer and the first spacer group; forming an overlap pattern blocking the target layer; and forming first patterns, spaced at the first interval and each formed to have a first width, in the first region and second patterns, spaced at the second intervals and each formed to have a second width, in the second regions.Type: GrantFiled: December 5, 2011Date of Patent: August 27, 2013Assignee: SK Hynix Inc.Inventor: Young Sun Hwang
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Publication number: 20120142194Abstract: A method of forming semiconductor memory device includes forming first to fourth spacers over a target layer including a first region and second regions adjacent to the first region so that a first spacer group including the first spacers spaced at a first interval is formed in the first region of the target layer, a second spacer group including the second spacers spaced at second intervals is formed in the second regions, a third spacer is formed between the first and the second spacer groups, and fourth spacers are formed between the third spacer and the first spacer group; forming an overlap pattern blocking the target layer; and forming first patterns, spaced at the first interval and each formed to have a first width, in the first region and second patterns, spaced at the second intervals and each formed to have a second width, in the second regions.Type: ApplicationFiled: December 5, 2011Publication date: June 7, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventor: Young Sun HWANG
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Patent number: 8161667Abstract: Disclosed are an elastic sole member which optimizes between a shock absorbing function and repulsive elastic force, between which a tradeoff relationship exists, and a shoe with the elastic sole member. The elastic sole member includes a sole body which is upwardly inclined toward a back end thereof, and an elastic member comprised of a fixing piece inserted through and fixed in a space formed through an upwardly inclined back portion of the sole body, and an elastic plate extending from the fixing plate while it is downwardly inclined and having a first end exposed to the outside and a second end spaced apart from the sole body, in which the elastic sole member elastically contracts when external force is applied to a back portion of the sole body while the fixing piece serves as the elastic support axis and provides elastic recovery force when the external force is removed.Type: GrantFiled: November 18, 2009Date of Patent: April 24, 2012Assignee: Boss CorporationInventor: Young Sun Hwang
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Publication number: 20100281709Abstract: The invention relates to a shoe provided with an outsole including an anti-distorting portion formed to extend from a rear portion to a front portion of the outsole to prevent the shoe from distorting, a shock-absorbing portion disposed at the rear portion of the outsole to absorb the external force applied to the heel portion of the wearer's foot when landing, and an elasticity-enhancing portion disposed at the front portion of the outsole in order to supplement actuating force using elastic force when leaving the ground. The shoe is advantageous in that it is possible to prevent the shoe from distorting while actions of landing and leaving the ground are repeated, to decrease the shock of the maximum load applied to the heel portion of the wearer's foot, and to supplement the actuating force with elastic recovery force when advancing.Type: ApplicationFiled: July 12, 2010Publication date: November 11, 2010Inventor: Young Sun Hwang
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Publication number: 20100058617Abstract: Disclosed are an elastic sole member which optimizes between a shock absorbing function and repulsive elastic force, between which a tradeoff relationship exists, and a shoe with the elastic sole member. The elastic sole member includes a sole body which is upwardly inclined toward a back end thereof, and an elastic member comprised of a fixing piece inserted through and fixed in a space formed through an upwardly inclined back portion of the sole body, and an elastic plate extending from the fixing plate while it is downwardly inclined and having a first end exposed to the outside and a second end spaced apart from the sole body, in which the elastic sole member elastically contracts when external force is applied to a back portion of the sole body while the fixing piece serves as the elastic support axis and provides elastic recovery force when the external force is removed.Type: ApplicationFiled: November 18, 2009Publication date: March 11, 2010Inventor: Young Sun Hwang
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Patent number: 7563753Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.Type: GrantFiled: December 12, 2002Date of Patent: July 21, 2009Assignee: Hynix Semiconductor Inc.Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin, Keun Kyu Kong, Sung Koo Lee, Young Sun Hwang
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Publication number: 20080227300Abstract: A method of manufacturing a semiconductor device prevents a pattern bridge phenomenon generated by a proximity effect between patterns and a thickness lowering phenomenon of the pattern. As a result, a length of the major axis required in characteristics of the device is secured to improve an electric characteristic and an overlapping margin. A photoresist pattern is formed to have a line/space type, thereby securing a DOF margin in comparison with a photoresist pattern of an island type.Type: ApplicationFiled: December 4, 2007Publication date: September 18, 2008Inventor: Young Sun Hwang
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Patent number: 7300880Abstract: A method of forming a fine pattern by a tri-layer resist process to overcome a bi-layer resist process is disclosed. When a fine pattern is formed using a silicon photoresist, a gas protection film is coated on a photoresist to prevent exhaustion of silicon gas generated from the photoresist in light examination of high energy. As a result, lens of exposure equipment may be prevented from being contaminated.Type: GrantFiled: November 21, 2003Date of Patent: November 27, 2007Assignee: Hynix Semiconductor Inc.Inventors: Young Sun Hwang, Jae Chang Jung
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Patent number: 7238653Abstract: Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. wherein R, x, y, z, a and b are as defined in the specification.Type: GrantFiled: November 26, 2003Date of Patent: July 3, 2007Assignee: Hynix Semiconductor Inc.Inventors: Geun Su Lee, Cheol Kyu Bok, Young Sun Hwang, Sung Koo Lee, Seung Chan Moon, Ki Soo Shin
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Patent number: 7220679Abstract: A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.Type: GrantFiled: June 13, 2003Date of Patent: May 22, 2007Assignee: Hynix Semiconductor Inc.Inventors: Sung-koo Lee, Jae-chang Jung, Young-sun Hwang, Cheol-kyu Bok, Ki-soo Shin
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Publication number: 20040266203Abstract: A method of forming a fine pattern by a tri-layer resist process to overcome a bi-layer resist process is disclosed. When a fine pattern is formed using a silicon photoresist, a gas protection film is coated on a photoresist to prevent exhaustion of silicon gas generated from the photoresist in light examination of high energy. As a result, lens of exposure equipment may be prevented from being contaminated.Type: ApplicationFiled: November 21, 2003Publication date: December 30, 2004Inventors: Young Sun Hwang, Jae Chang Jung
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Publication number: 20040180293Abstract: Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation.Type: ApplicationFiled: November 26, 2003Publication date: September 16, 2004Inventors: Geun Su Lee, Cheol Kyu Bok, Young Sun Hwang, Sung Koo Lee, Seung Chan Moon, Ki Soo Shin
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Patent number: 6764964Abstract: A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.Type: GrantFiled: December 30, 2002Date of Patent: July 20, 2004Assignee: Hynix Semiconductor Inc.Inventors: Young-sun Hwang, Jae-chang Jung, Sung-koo Lee, Chcol-kyu Bok, Ki-soo Shin
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Publication number: 20040106071Abstract: Photoresist overcoating compositions are disclosed. More specifically, a photoresist overcoating composition comprising a compound represented by Formula 1 is disclosed that can reduce critical dimension difference between the center and the edge of a wafer in a patterning process.Type: ApplicationFiled: June 24, 2003Publication date: June 3, 2004Inventors: Young Sun Hwang, Sam Young Kim, Jae Chang Jung
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Publication number: 20040067655Abstract: A method for forming a pattern in a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.Type: ApplicationFiled: June 13, 2003Publication date: April 8, 2004Inventors: Sung-Koo Lee, Jae-Chang Jung, Young-Sun Hwang, Cheol-Kyu Bok, Ki-Soo Shin
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Publication number: 20040014322Abstract: A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.Type: ApplicationFiled: December 30, 2002Publication date: January 22, 2004Inventors: Young-Sun Hwang, Jae-Chang Jung, Sung-Koo Lee, Cheol-Kyu Bok, Ki-Soo Shin
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Publication number: 20030130148Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds.Type: ApplicationFiled: December 12, 2002Publication date: July 10, 2003Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin, Keun Kyu Kong, Sung Koo Lee, Young Sun Hwang