Patents by Inventor Young Sun Oh
Young Sun Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20260211208Abstract: An embodiment of the present invention discloses a camera actuator comprising: a housing; a first lens assembly moving in the optical axis direction inside the housing; a drive unit for moving the first lens assembly; and a first stopper disposed at one end of the housing, wherein the first stopper includes a 1-1 stopper disposed on one side and a 1-2 stopper disposed on the other side, and the 1-1 stopper and the 1-2 stopper come into contact with the first lens assembly when the first lens assembly moves.Type: ApplicationFiled: January 10, 2024Publication date: July 23, 2026Applicant: LG INNOTEK CO., LTD.Inventors: Dong Chan HONG, Seul A KIM, Young Bin PARK, Young Sun OH, Kap Jin LEE
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Patent number: 12604546Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.Type: GrantFiled: October 3, 2023Date of Patent: April 14, 2026Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung Hyun Lee, Young Chan Kim, Young Gu Jin, Young Sun Oh
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Publication number: 20260012717Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.Type: ApplicationFiled: September 16, 2025Publication date: January 8, 2026Inventors: Young Gu JIN, Young Sun OH
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Patent number: 12445753Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.Type: GrantFiled: January 18, 2023Date of Patent: October 14, 2025Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Gu Jin, Young Sun Oh
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Publication number: 20240128290Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.Type: ApplicationFiled: October 3, 2023Publication date: April 18, 2024Inventors: Seung Hyun LEE, Young Chan KIM, Young Gu JIN, Young Sun OH
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Publication number: 20230328408Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.Type: ApplicationFiled: January 18, 2023Publication date: October 12, 2023Inventors: Young Gu JIN, Young Sun OH
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Publication number: 20230275041Abstract: An image sensor includes a substrate having a first surface and a second surface opposing to the first surface, first pixel separation patterns defining a plurality of unit pixels, which include photoelectric conversion regions in the substrate, each of the first pixel separation patterns including a first conductive film and a second conductive film on the first conductive film, and microlenses on the second surface of the substrate, wherein the first conductive film extends along sidewalls of the second conductive film to separate the second conductive film from the substrate, the first conductive film has a greater reflectance than the second conductive film for a predetermined wavelength range, and the second conductive film has a greater step coverage than the first conductive film.Type: ApplicationFiled: October 26, 2022Publication date: August 31, 2023Inventors: Young Gu JIN, Jung Chak AHN, Young Sun OH
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Publication number: 20230189404Abstract: The present disclosure relates to a surface heating heater pipe and an aerosol generating device including the same, and more particularly, to a surface heating heater pipe having improved performance by implementing a surface heating structure using graphene and an aerosol generating device including the same. A heater pipe for an aerosol generating device for transferring heat to an aerosol-forming article includes a body formed of metal and having a shape of a pipe having a space for accommodating the aerosol-forming article, a first insulating layer formed on an outer surface of the body, a graphene layer formed on the first insulating layer by deposition, and a second insulating layer formed on the graphene layer.Type: ApplicationFiled: December 12, 2022Publication date: June 15, 2023Inventors: Han Seok Chae, Il Kwon Song, Young Sun Oh, Beom Chang Oh
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Patent number: 10128288Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.Type: GrantFiled: August 5, 2016Date of Patent: November 13, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young Sun Oh, Jung Chak Ahn, Young Woo Jung
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Patent number: 10096632Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.Type: GrantFiled: February 6, 2017Date of Patent: October 9, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Young Sun Oh, Yi Tae Kim, Jung Chak Ahn
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Patent number: 9960201Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.Type: GrantFiled: August 20, 2015Date of Patent: May 1, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Ho Lee, Seung Joo Nah, Young Sun Oh, Dong Young Jang
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Publication number: 20170236858Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.Type: ApplicationFiled: February 6, 2017Publication date: August 17, 2017Inventors: YOUNG SUN OH, YI TAE KIM, JUNG CHAK AHN
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Publication number: 20170040364Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.Type: ApplicationFiled: August 5, 2016Publication date: February 9, 2017Inventors: Young Sun OH, Jung Chak AHN, Young Woo JUNG
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Publication number: 20160064446Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.Type: ApplicationFiled: August 20, 2015Publication date: March 3, 2016Inventors: KYUNG HO LEE, SEUNG JOO NAH, YOUNG SUN OH, DONG YOUNG JANG
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Patent number: 9206132Abstract: An aminopyridine derivative of Formula 1 and a method of preventing or treating cancer using the same. Formula 1: In Formula 1: X1 and X2 are each independently selected from the group consisting of carbon and nitrogen; R1 to R5 are each independently selected from the group consisting of a hydrogen, a straight, a branched, or cyclo alkyl of C1-C4, a halogen, and a hydroxyl; and R6 is a hydrogen or an alkyl of C1-C6.Type: GrantFiled: October 20, 2014Date of Patent: December 8, 2015Assignee: Medicinal Bioconvergence Research CenterInventors: Sunghoon Kim, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim
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Publication number: 20150038531Abstract: An aminopyridine derivative of Formula 1 and a method of preventing or treating cancer using the same. Formula 1: In Formula 1: X1 and X2 are each independently selected from the group consisting of carbon and nitrogen; R1 to R5 are each independently selected from the group consisting of a hydrogen, a straight, a branched, or cyclo alkyl of C1-C4, a halogen, and a hydroxyl; and R6 is a hydrogen or an alkyl of C1-C6.Type: ApplicationFiled: October 20, 2014Publication date: February 5, 2015Inventors: Sunghoon Kim, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim
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Publication number: 20140142333Abstract: Aniline derivatives for anticancer treatment including a compound of the Formula 1, or a derivative thereof, as an active ingredient,Type: ApplicationFiled: February 4, 2014Publication date: May 22, 2014Applicant: NEOMICS Co, Ltd.Inventors: Sunghoon KIM, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim