Patents by Inventor Young Sun Oh

Young Sun Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260211208
    Abstract: An embodiment of the present invention discloses a camera actuator comprising: a housing; a first lens assembly moving in the optical axis direction inside the housing; a drive unit for moving the first lens assembly; and a first stopper disposed at one end of the housing, wherein the first stopper includes a 1-1 stopper disposed on one side and a 1-2 stopper disposed on the other side, and the 1-1 stopper and the 1-2 stopper come into contact with the first lens assembly when the first lens assembly moves.
    Type: Application
    Filed: January 10, 2024
    Publication date: July 23, 2026
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dong Chan HONG, Seul A KIM, Young Bin PARK, Young Sun OH, Kap Jin LEE
  • Patent number: 12604546
    Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.
    Type: Grant
    Filed: October 3, 2023
    Date of Patent: April 14, 2026
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hyun Lee, Young Chan Kim, Young Gu Jin, Young Sun Oh
  • Publication number: 20260012717
    Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.
    Type: Application
    Filed: September 16, 2025
    Publication date: January 8, 2026
    Inventors: Young Gu JIN, Young Sun OH
  • Patent number: 12445753
    Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.
    Type: Grant
    Filed: January 18, 2023
    Date of Patent: October 14, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Gu Jin, Young Sun Oh
  • Publication number: 20240128290
    Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 18, 2024
    Inventors: Seung Hyun LEE, Young Chan KIM, Young Gu JIN, Young Sun OH
  • Publication number: 20230328408
    Abstract: An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.
    Type: Application
    Filed: January 18, 2023
    Publication date: October 12, 2023
    Inventors: Young Gu JIN, Young Sun OH
  • Publication number: 20230275041
    Abstract: An image sensor includes a substrate having a first surface and a second surface opposing to the first surface, first pixel separation patterns defining a plurality of unit pixels, which include photoelectric conversion regions in the substrate, each of the first pixel separation patterns including a first conductive film and a second conductive film on the first conductive film, and microlenses on the second surface of the substrate, wherein the first conductive film extends along sidewalls of the second conductive film to separate the second conductive film from the substrate, the first conductive film has a greater reflectance than the second conductive film for a predetermined wavelength range, and the second conductive film has a greater step coverage than the first conductive film.
    Type: Application
    Filed: October 26, 2022
    Publication date: August 31, 2023
    Inventors: Young Gu JIN, Jung Chak AHN, Young Sun OH
  • Publication number: 20230189404
    Abstract: The present disclosure relates to a surface heating heater pipe and an aerosol generating device including the same, and more particularly, to a surface heating heater pipe having improved performance by implementing a surface heating structure using graphene and an aerosol generating device including the same. A heater pipe for an aerosol generating device for transferring heat to an aerosol-forming article includes a body formed of metal and having a shape of a pipe having a space for accommodating the aerosol-forming article, a first insulating layer formed on an outer surface of the body, a graphene layer formed on the first insulating layer by deposition, and a second insulating layer formed on the graphene layer.
    Type: Application
    Filed: December 12, 2022
    Publication date: June 15, 2023
    Inventors: Han Seok Chae, Il Kwon Song, Young Sun Oh, Beom Chang Oh
  • Patent number: 10128288
    Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Sun Oh, Jung Chak Ahn, Young Woo Jung
  • Patent number: 10096632
    Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: October 9, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Sun Oh, Yi Tae Kim, Jung Chak Ahn
  • Patent number: 9960201
    Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: May 1, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Ho Lee, Seung Joo Nah, Young Sun Oh, Dong Young Jang
  • Publication number: 20170236858
    Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.
    Type: Application
    Filed: February 6, 2017
    Publication date: August 17, 2017
    Inventors: YOUNG SUN OH, YI TAE KIM, JUNG CHAK AHN
  • Publication number: 20170040364
    Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.
    Type: Application
    Filed: August 5, 2016
    Publication date: February 9, 2017
    Inventors: Young Sun OH, Jung Chak AHN, Young Woo JUNG
  • Publication number: 20160064446
    Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.
    Type: Application
    Filed: August 20, 2015
    Publication date: March 3, 2016
    Inventors: KYUNG HO LEE, SEUNG JOO NAH, YOUNG SUN OH, DONG YOUNG JANG
  • Patent number: 9206132
    Abstract: An aminopyridine derivative of Formula 1 and a method of preventing or treating cancer using the same. Formula 1: In Formula 1: X1 and X2 are each independently selected from the group consisting of carbon and nitrogen; R1 to R5 are each independently selected from the group consisting of a hydrogen, a straight, a branched, or cyclo alkyl of C1-C4, a halogen, and a hydroxyl; and R6 is a hydrogen or an alkyl of C1-C6.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: December 8, 2015
    Assignee: Medicinal Bioconvergence Research Center
    Inventors: Sunghoon Kim, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim
  • Publication number: 20150038531
    Abstract: An aminopyridine derivative of Formula 1 and a method of preventing or treating cancer using the same. Formula 1: In Formula 1: X1 and X2 are each independently selected from the group consisting of carbon and nitrogen; R1 to R5 are each independently selected from the group consisting of a hydrogen, a straight, a branched, or cyclo alkyl of C1-C4, a halogen, and a hydroxyl; and R6 is a hydrogen or an alkyl of C1-C6.
    Type: Application
    Filed: October 20, 2014
    Publication date: February 5, 2015
    Inventors: Sunghoon Kim, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim
  • Publication number: 20140142333
    Abstract: Aniline derivatives for anticancer treatment including a compound of the Formula 1, or a derivative thereof, as an active ingredient,
    Type: Application
    Filed: February 4, 2014
    Publication date: May 22, 2014
    Applicant: NEOMICS Co, Ltd.
    Inventors: Sunghoon KIM, Hee Sook Lee, Young Sun Oh, Dae Gyu Kim