Abstract: An apparatus for controlling a discharge pressure of a fluid includes: a pump configured to suck the fluid through an inlet or to discharge the sucked fluid through an outlet; a distributor connected to the pump and to an injection nozzle provided by a sensor and configured to distribute the fluid discharged from the pump to the sensor; and a controller. The controller is configured to control the pump to operate selectively in accordance with detection of contamination of the sensor and to control operation of the distributor to be forcibly delayed during operation of the pump such that the fluid distributed to the sensor, when detected as being contaminated, is controlled to reach a selected required discharge pressure of different required discharge pressures selected in accordance with water amount information and a degree of contamination of the sensor.

Abstract: A micro LED alignment method includes the steps of: (a) arranging, on a substrate, a first electrode layer and a second electrode layer spaced apart from each other; (b) arranging an insulation layer on the substrate on which the first electrode layer and the second electrode layer are arranged; (c) forming a plurality of grooves at regular intervals in a portion, of the insulation layer, corresponding to the region between the first electrode layer and the second electrode layer; and (d) aligning the plurality of micro LEDs at regular intervals by means of repulsive force generated between one micro LED and another adjacent micro LED through the generation of an electric field in the first electrode layer and the second electrode layer, while supplying, onto the substrate, a solution containing the plurality of micro LEDs, wherein in step (d), one micro LED can be aligned with one groove.

Abstract: A photographing method of an electronic device and the electronic device thereof are provided. The method includes activating a first camera module and a second camera module, displaying an image captured by the activated first camera module on a screen, and capturing an image of the first camera module displayed on the screen based on information of an image captured by the second camera module photographing. An image captured by the activated first camera module is displayed on a screen. An image of the first camera module displayed on the screen is captured based on information of an image captured by the second camera module.

Abstract: A photographing method of an electronic device and the electronic device thereof are provided. The method includes activating a first camera module and a second camera module, displaying an image captured by the activated first camera module on a screen, and capturing an image of the first camera module displayed on the screen based on information of an image captured by the second camera module photographing. An image captured by the activated first camera module is displayed on a screen. An image of the first camera module displayed on the screen is captured based on information of an image captured by the second camera module.

Abstract: A method for fabricating a flash memory device, includes: preparing a substrate having an active region and an inactive region; forming a trench in the inactive region; forming a device isolation film in the trench; forming a well in the active region; forming a tunnel oxide film, a first polysilicon layer, an inter-layer dielectric film, a second polysilicon layer, and an oxide film over a surface of the substrate having the well formed therein; and forming a floating gate, a dielectric film, a control gate and a protection film over the active region by patterning the first polysilicon layer, the inter-layer dielectric film, the second polysilicon layer and the oxide film. The method further includes: forming a photoresist pattern over the surface of the substrate to thereby expose the protection film and the inactive region; and removing the exposed tunnel oxide film and the device isolation film over the inactive region using the photoresist pattern.

Abstract: A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a dielectric layer over the lower electrode, forming a second polysilicon layer over the dielectric layer, patterning the second polysilicon layer, implanting impurities into a side wall of the patterns of the second polysilicon layer and selectively etching the side wall of the patterns of the second polysilicon layer. The impurities are implanted to control an effective line width of the patterns of the second polysilicon layer as an upper electrode.

Abstract: A method for fabricating a flash memory device includes the steps of forming a buffer film on a semiconductor substrate having a defined active region; controlling a threshold voltage of a memory cell by ion-implanting dopants into the active region of the substrate under the buffer film; removing the buffer film by performing a wet-cleaning process whose target thickness is about 1 to about 1.5 times the buffer film thickness; and forming a tunnel dielectric film on the active region of the exposed substrate after the buffer film is removed.

Abstract: A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a dielectric layer over the lower electrode, forming a second polysilicon layer over the dielectric layer, patterning the second polysilicon layer, implanting impurities into a side wall of the patterns of the second polysilicon layer and selectively etching the side wall of the patterns of the second polysilicon layer. The impurities are implanted to control an effective line width of the patterns of the second polysilicon layer as an upper electrode.

Abstract: A semiconductor device includes a substrate in which at least one transistor is formed; an interlayer insulating layer formed over the entire surface of the substrate including the transistor, the interlayer insulating layer having contact holes to expose the electrodes of the transistor; and contact insulating layers formed over the internal walls of the contact holes.

Abstract: A pad structure of a semiconductor device includes a plurality metal layers formed on a semiconductor substrate. An uppermost metal layer includes grooves.

Abstract: A bonding pad structure in a semiconductor device includes a first metal layer formed over an underlying interlayer insulating film over a semiconductor substrate, a first interlayer insulating film formed over the first metal layer, first via holes formed in the first interlayer insulating film and set apart from each other at non-uniform intervals, first vias filling the first via holes and one or more residual portions of a first via layer forming the first vias, and a second metal layer formed over the first vias and said one or more residual portions of the first via layer. The residual portions are formed together with and between the first vias due to the non-uniform intervals between the first vias.

Abstract: An apparatus and method for switching a mode in a dual-mode terminal are provided. If the current operation mode is a GSM mode, a CDMA mode key is displayed upon booting of the dual-mode terminal. Upon selection of the CDMA mode key, the operation mode is switched to the CDMA mode. If the current operation mode is the CDMA mode, a GSM mode key is displayed upon booting. Upon selection of the GSM mode key, the operation mode is switched to the GSM mode.