Patents by Inventor Youqing Tang

Youqing Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making resistive structure of RRAM
    Patent number: 11302867
    Abstract: A method for making an RRAM resistive structure includes, step 1, forming a via structure, which includes depositing an ultra-low dielectric constant material layer on a substrate, depositing a copper layer on the ultra-low dielectric constant material layer, depositing a carbon-containing silicon nitride layer, and patterning a via in the carbon-containing silicon nitride layer. step 2, filling the via structure with a TaN layer, followed by planarizing a surface of the via structure without dishing; step 3, forming a first TiN layer on the TaN-filled via structure; and step 4, forming an RRAM resistive structure stack having layers of TaOx, Ta2O5, Ta, and a second TiN from bottom to top on the first TiN layer, and step 5, patterning the RRAM resistive structure stack the first TiN layer over the TaN-filled via structure to form the RRAM resistive structure.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: April 12, 2022
    Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATION
    Inventors: Youqing Tang, Zhigang Zhang
  • METHOD OF MAKING RESISTIVE STRUCTURE OF RRAM
    Publication number: 20210098699
    Abstract: A method for making an RRAM resistive structure includes, step 1, forming a via structure, which includes depositing an ultra-low dielectric constant material layer on a substrate, depositing a copper layer on the ultra-low dielectric constant material layer, depositing a carbon-containing silicon nitride layer, and patterning a via in the carbon-containing silicon nitride layer. step 2, filling the via structure with a TaN layer, followed by planarizing a surface of the via structure without dishing; step 3, forming a first TiN layer on the TaN-filled via structure; and step 4, forming an RRAM resistive structure stack having layers of TaOx, Ta2O5, Ta, and a second TiN from bottom to top on the first TiN layer, and step 5, patterning the RRAM resistive structure stack the first TiN layer over the TaN-filled via structure to form the RRAM resistive structure.
    Type: Application
    Filed: April 16, 2020
    Publication date: April 1, 2021
    Inventors: Youqing Tang, Zhigang Zhang